SQUARE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
24LC014-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words				8	SMALL OUTLINE	SOP8,.19			200	.65 mm	85 Cel			128X8	128	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3		260	.000001 Amp	3 mm
25AA160D-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		3-STATE	1KX8	1K	-40 Cel	Matte Tin (Sn) - annealed			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V	OPERATES WITH 1.8VMIN @ 3MHZ	e3	40	260	.000005 Amp	3 mm		2.5
25AA640AT-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			8KX8	8K	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V		e3	40	260	.000001 Amp	3 mm		2.5
93AA46C-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	2.5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	1.8 V		e3		260	.000001 Amp	3 mm
93AA46CT-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	2.5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	1.8 V		e3		260	.000001 Amp	3 mm
93AA66C-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	YES	2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel	Matte Tin (Sn)		YES	DUAL		SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	1.8 V	ALSO CONFIGURABLE AS 512 X 8	e3	40	260	.000001 Amp	3 mm
93LC46BT-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	3		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V		e3	40	260	.000001 Amp	3 mm
AT17LV256-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ		EEPROMs	90	1.27 mm	85 Cel			256KX1	256K	-40 Cel	MATTE TIN			QUAD		HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm	100000 Write/Erase Cycles	10 MHz	8.9662 mm	Not Qualified			262144 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO	e3			.00015 Amp	8.9662 mm	80 ns
AT17LV512A-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	524288 words	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ		EEPROMs	90	1.27 mm	85 Cel			512KX1	512K	-40 Cel	MATTE TIN		YES	QUAD		HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm	100000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified			524288 bit	3 V	ALSO OPERATES AT 5V SUPPLY	e3			.0002 Amp	8.9662 mm
DS2704G+	Analog Devices	EEPROM	COMMERCIAL EXTENDED	6	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS	.75 mA	128 words			3/5	8	SMALL OUTLINE	SOLCC6,.11,37		EEPROMs	10	.95 mm	85 Cel			128X8	128	-30 Cel	Matte Tin (Sn) - annealed			DUAL		SOFTWARE	S-XDSO-N6	1	5.5 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.5 V		e3	30	260	.000002 Amp
DS2704G+T&R	Analog Devices	EEPROM	COMMERCIAL EXTENDED	6	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS	.75 mA	128 words			3/5	8	SMALL OUTLINE	SOLCC6,.11,37		EEPROMs	10	.95 mm	85 Cel			128X8	128	-30 Cel	Matte Tin (Sn) - annealed			DUAL		SOFTWARE	S-XDSO-N6	1	5.5 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.5 V		e3	30	260	.000002 Amp
DS28E02Q+T&R	Analog Devices	EEPROM	OTHER	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1024 words	1.8		1.8/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37		EEPROMs	40	.95 mm	85 Cel			1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.65 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified		1-WIRE	1024 bit	1.75 V		e3	30	260		3 mm
DS28E02Q+U	Analog Devices	EEPROM	OTHER	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.65 V	.8 mm			3 mm			1-WIRE	1024 bit	1.75 V		e3	30	260		3 mm
DS28E01Q-100+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37		EEPROMs	40	.95 mm	85 Cel			1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	5.25 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260		3 mm
DS28CN01U+T	Analog Devices	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	1024 words	5.5		1.8/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel			1KX1	1K	-40 Cel				DUAL			S-PDSO-G8		5.5 V	1.1 mm	200000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified			1024 bit	1.62 V			NOT SPECIFIED	NOT SPECIFIED	.0000055 Amp	3 mm		3
DS28E01Q-100+U	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	5.25 V	.8 mm			3 mm			1-WIRE	1024 bit	2.8 V		e3	30	260		3 mm
DS28E05X+T	Analog Devices	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		112 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			112X8	112	-40 Cel				BOTTOM			S-PBGA-B4		3.63 V	.37 mm			.908 mm			1-WIRE	896 bit	1.71 V			NOT SPECIFIED	NOT SPECIFIED		.908 mm
DS28E15G+	Analog Devices	EEPROM	INDUSTRIAL	2	BCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		512 words	3.3			1	CHIP CARRIER					3 mm	85 Cel			512X1	512	-40 Cel				BOTTOM			S-XBCC-B2		3.63 V	.8 mm			3.5 mm			1-WIRE	512 bit	2.97 V			NOT SPECIFIED	NOT SPECIFIED		6.5 mm
DS28CN01U+	Analog Devices	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	1024 words	5.5		1.8/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel			1KX1	1K	-40 Cel				DUAL			S-PDSO-G8		5.5 V	1.1 mm	200000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified			1024 bit	1.62 V			NOT SPECIFIED	NOT SPECIFIED	.0000055 Amp	3 mm		3
DS28E15G+T	Analog Devices	EEPROM	INDUSTRIAL	2	BCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		512 words	3.3			1	CHIP CARRIER					3 mm	85 Cel			512X1	512	-40 Cel	NICKEL GOLD PALLADIUM			BOTTOM			S-XBCC-B2		3.63 V	.8 mm			3.5 mm			1-WIRE	512 bit	2.97 V						6.5 mm
DS28E25Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			4KX1	4K	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	4096 bit	2.97 V		e3	30	260		3 mm
DS28EL15Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		512 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			512X1	512	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	1.89 V	.8 mm			3 mm			1-WIRE	512 bit	1.71 V		e3	30	260		3 mm
DS28E22Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		2048 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			2KX1	2K	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	2048 bit	2.97 V		e3	30	260		3 mm
CAT93C57ZD4I-1.8-T2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm		2.7
CAT93C57ZD4I-T3REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL			S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3	40	260		3 mm
CAT93C56RD4A-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE		8				105 Cel			128X16	128	-40 Cel	TIN LEAD			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	2048 bit	2.5 V		e0
CAT93C57ZD4A-GT2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm		2.7
CAT93C66ZD4-1.8	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8				70 Cel			256X16	256	0 Cel	MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	4096 bit	1.8 V		e3
CAT93C86RD4E-1.8REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8				125 Cel			1KX16	1K	-40 Cel	TIN LEAD			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	16384 bit	1.8 V		e0
CAT93C57ZD4E-1.8-E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm		2.7
CAT93C57ZD4E-1.8-T2E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm		2.7
CAT93C56ZD4A-1.8	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	105 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-XDSO-N8	1	6 V		1000000 Write/Erase Cycles	.25 MHz		Not Qualified		MICROWIRE	2048 bit	1.8 V		e3			.00001 Amp
CAT93C57ZD4I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE		8				85 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	2048 bit	2.5 V		e3
CAT93C86ZD4I-GT2	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel			1KX16	1K	-40 Cel	MATTE TIN			DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 2.5MIN	e3			.00001 Amp	3 mm
CAT93C76ZD4E-TE13REVA	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5			16	SMALL OUTLINE		8				125 Cel			512X16	512	-40 Cel	MATTE TIN			DUAL			S-XDSO-N8	1	5.5 V			1 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e3
CAT93C86ZD4E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel			1KX16	1K	-40 Cel	MATTE TIN			DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 2.5MIN	e3			.00001 Amp	3 mm
CAT93C66ZD4I-GT3E	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel			256X16	256	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm
CAT93C57ZD4A-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE		8				105 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	2048 bit	1.8 V		e3
CAT93C56ZD4A-1.8-GREVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	105 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4				3 mm
CAT93C86ZD4A-1.8REVC	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8				105 Cel			1KX16	1K	-40 Cel	MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	16384 bit	1.8 V		e3
CAT93C57ZD4E-GT3E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm		2.7
CAT93C57ZD4I-1.8-GT2REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			S-XDSO-N8		5.5 V	.8 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4	40	260		3 mm
CAT93C57ZD4A-1.8-GT2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm		2.7
CAT93C57ZD4A-T3REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	105 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL			S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3	40	260		3 mm
CAT93C86ZD4E-1.8-G	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel			1KX16	1K	-40 Cel	MATTE TIN			DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 1.8MIN	e3			.00001 Amp	3 mm
CAT93C66ZD4A-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8				105 Cel			256X16	256	-40 Cel	MATTE TIN			DUAL			S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	4096 bit	1.8 V		e3
CAT93C57ZD4I-GT2REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			S-XDSO-N8	1	5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e4				3 mm
CAT93C86ZD4I-1.8-GT2REVC	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel			1KX16	1K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			S-XDSO-N8	1	5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V		e4				3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.