AUTOMOTIVE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
CAT24FC256PE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	4 mA	32768 words	3	2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel			32KX8	32K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V		e0			.00001 Amp	9.36 mm
CAV24M01YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel			128KX8	128K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		.4 MHz	3 mm		5 ms	I2C	1048576 bit	2.5 V		e4	NOT SPECIFIED	NOT SPECIFIED		4.4 mm
CAT24AC128XE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3	3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	100	1.27 mm	125 Cel			16KX8	16K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		6 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		e3			.00001 Amp	5.3 mm
NV25640UVLT2G	Onsemi	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20		200	.5 mm	125 Cel	NO		8KX8	8K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	.9 mm	4000000 Write/Erase Cycles	20 MHz	2 mm		4 ms	SPI	65536 bit	1.7 V		e3			.000003 Amp	2.3 mm
CAT24WC02GYE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	125 Cel			256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT25640HU3E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			100	.5 mm	125 Cel			8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-N8		5.5 V	.55 mm		10 MHz	2 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V	100 YEAR DATA RETENTION	e4				3 mm
CAT24C32VP2E-G	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	32768 words	5	2/5	1	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	1.27 mm	125 Cel			32KX1	32K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	IT ALSO OPERATES AT 0.1MHZ	e3			.000002 Amp	4.9 mm
CAT24FC256GWE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		4 mA	32768 words		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel			32KX8	32K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit						.00001 Amp
CAT24FC16WE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel			2KX8	2K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V		e3			.00001 Amp	4.9 mm
CAT24WC01GLE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	128 words		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel			128X8	128	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT25C09PE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1024 words	5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel			1KX8	1K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		e0				9.59 mm
CAT25C03RE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel			256X8	256	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	2048 bit	1.8 V		e0				3 mm
CAT25040LE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words	5	2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel			512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V		e4		260	.000002 Amp	9.27 mm
CAT25128VE-G	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	16384 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel			16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	2.5 V		e4		260	.000003 Amp	4.9 mm
CAT24C164WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	2.5		8	SMALL OUTLINE				1.27 mm	125 Cel			2KX8	2K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V						4.9 mm
CAT24WC04JE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel			512X8	512	-40 Cel		1010DDMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24C01BZE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	125 Cel			128X8	128	-40 Cel	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified			1024 bit			e0			.00001 Amp
CAT25C03GZE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel			256X8	256	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		S-PDSO-G8		6 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	SPI	2048 bit	1.8 V		e4	40	260		3 mm
CAT24WC04GZE-1.8TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	125 Cel			512X8	512	-40 Cel		1010DDMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24FC17GD4E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	2048 words		3/5	8	SMALL OUTLINE	SOLCC8,.12,25	EEPROMs	100	.635 mm	125 Cel			2KX8	2K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit						.00001 Amp
NV25040DTVLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		200	.65 mm	125 Cel	NO	3-STATE	512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	20 MHz	3 mm		4 ms	SPI	4096 bit	1.7 V		e4	30	260	.000003 Amp	4.4 mm
CAT24WC04GWE-1.8TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel			512X8	512	-40 Cel		1010DDMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24WC16GLE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	2048 words		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel			2KX8	2K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit						.000001 Amp
CAT24FC01RE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel			128X8	128	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		e0			.00001 Amp	3 mm
CAT24WC04PE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	512 words		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel			512X8	512	-40 Cel		1010DDMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
NV25320MUW3VFT3G	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel			4KX8	4K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.55 mm		20 MHz	2 mm		4 ms	SPI	32768 bit	4.5 V	IT ALSO OPERATES AT 2.5 TO 4.5 V SUPPLY VOLTAGE AT 10 MHZ FREQUENCY		NOT SPECIFIED	NOT SPECIFIED		3 mm
CAT24WC01ZE-1.8REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	125 Cel			128X8	128	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT25C128Y14E-1.8-T2	Onsemi	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	100	.635 mm	125 Cel			16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G14				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit						.00001 Amp
CAT24WC01JE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel			128X8	128	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT25C33Y14E-1.8	Onsemi	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	100	.65 mm	125 Cel			4KX8	4K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	4.4 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V		e3				5 mm
CAT24WC66LE-C	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel			8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V		e3			.000001 Amp	9.27 mm
CAT24FC32YE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel			4KX8	4K	-40 Cel	TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V		e3			.00001 Amp	4.4 mm
CAT24WC01UE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	125 Cel			128X8	128	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT24C16YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel			2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V		e4	30	260	.000005 Amp	4.4 mm
CAT24FC17RE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel			2KX8	2K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V		e0			.00001 Amp	3 mm
CAT24FC256GXE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		4 mA	32768 words		3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	100	1.27 mm	125 Cel			32KX8	32K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit						.00001 Amp
CAT24C32BWE-G	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5		8	SMALL OUTLINE				1.27 mm	125 Cel			4KX8	4K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm		4 ms	I2C	32768 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
CAT24WC04RE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	125 Cel			512X8	512	-40 Cel		1010DDMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT25C64SE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE					125 Cel			8KX8	8K	-40 Cel			DUAL		R-PDSO-G8		6 V			3 MHz			10 ms	SPI	65536 bit	2.5 V
CAT24C128YE-G	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel			16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V	IT ALSO OPERATES AT 0.1MHZ	e4		260	.000002 Amp	4.4 mm
CAT24WC04YE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	125 Cel			512X8	512	-40 Cel		1010DDMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24WC01ZE-1.8TE13REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	125 Cel			128X8	128	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT25010VE-1.8TE13REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		8	SMALL OUTLINE					125 Cel			128X8	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V			1 MHz		Not Qualified	5 ms	SPI	1024 bit	1.8 V		e3
CAT24C01BUE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	125 Cel			128X8	128	-40 Cel	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified			1024 bit			e0			.00001 Amp
CAT24AC128JE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel			16KX8	16K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V		e0			.00001 Amp	4.9 mm
CAT24C64VP2E-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		2 mA	8192 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel			8KX8	8K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit						.000002 Amp
CAT25C128Y14E-G	Onsemi	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words	5	3/5	8	SMALL OUTLINE	TSSOP14,.25	EEPROMs	100	.635 mm	125 Cel			16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	5 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 3MHZ AT 2.5MIN				.00001 Amp
CAT24WC164ZE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel			2KX8	2K	-40 Cel	MATTE TIN	1DDDMMMR	DUAL	HARDWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V		e3			.00001 Amp	3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.