AUTOMOTIVE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT25010LE-D	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	128X8	128	-40 Cel		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V	IT ALSO OPERATES AT 5MHZ AT 1.8MIN		e3			.000002 Amp	9.27 mm
CAT24WC01YE-TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25C128XE-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words	5		3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	100	1.27 mm	125 Cel	16KX8	16K	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	5 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 3MHZ AT 2.5MIN					.00001 Amp
CAT25C128VE-G	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words	5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	16KX8	16K	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	5 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 3MHZ AT 2.5MIN					.00001 Amp
CAT25M02VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		262144 words				8	SMALL OUTLINE				1.27 mm	125 Cel	256KX8	256K	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.75 mm		10 MHz	3.9 mm		6 ms	I2C	2097152 bit	2.5 V							4.9 mm
CAT24WC01JE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC66XE-1.8-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		2/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles		5.23 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V						.000001 Amp	5.255 mm
CAT24C01WIT3	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE				2.54 mm	125 Cel	128X16	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4				9.27 mm
CAT24C164WI-T3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	2048 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	2KX8	2K	-40 Cel			1DDDMMMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT24WC02GWE-1.8TE13REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC02JE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25C11RE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel	128X8	128	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V			e0			.00001 Amp	3 mm
CAT24WC02GLE-1.8REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25320LE-T3	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5			8	IN-LINE			100	2.54 mm	125 Cel	4KX8	4K	-40 Cel		MATTE TIN		DUAL			R-PDIP-T8		5.5 V	5.33 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V	100 YEAR DATA RETENTION		e3				9.27 mm
CAT25010RE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE					125 Cel	128X8	128	-40 Cel		TIN LEAD		DUAL			S-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	1024 bit	1.8 V			e0
CAT24FC17GYE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	2048 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	125 Cel	2KX8	2K	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.00001 Amp
CAT24C64WE-T3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel			1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
CAT25C33VE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	4KX8	4K	-40 Cel		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V			e3				4.9 mm
CAT25C32LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5			8	IN-LINE					125 Cel	4KX8	4K	-40 Cel				DUAL			R-PDIP-T8		6 V			3 MHz			10 ms	SPI	32768 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED
CAT25C64LE-1.8-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	125 Cel	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V	5.334 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V			e4				9.271 mm
CAT24FC17LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	2KX8	2K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e3			.00001 Amp	9.59 mm
CAT25C64LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE					125 Cel	8KX8	8K	-40 Cel				DUAL			R-PDIP-T8		6 V			3 MHz			10 ms	SPI	65536 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED
CAT25C32GLE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5			8	IN-LINE					125 Cel	4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		6 V			3 MHz			10 ms	SPI	32768 bit	2.5 V			e4
CAT25080HU2E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	1024 words	5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.08,20	EEPROMs	100	.5 mm	125 Cel	1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V	100 YEAR DATA RETENTION		e4		260	.000002 Amp	2 mm
CAT25010PE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE				2.54 mm	125 Cel	128X8	128	-40 Cel		TIN LEAD		DUAL			R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V			e0				9.36 mm
CAT25C09GYE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		6 V	1.2 mm		1 MHz	3 mm	Not Qualified	10 ms	SPI	8192 bit	1.8 V			e4				4.4 mm
CAT28LV256H13E-25T	Onsemi	EEPROM	AUTOMOTIVE	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	125 Cel	32KX8	32K	-40 Cel	NO	Matte Tin (Sn)		DUAL			R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3			.00015 Amp	11.8 mm	250 ns	3	YES
CAT24WC08WE-TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	1024 words			3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	1KX8	1K	-40 Cel			1010DMMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT24C16WE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3		2/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	16KX1	16K	-40 Cel		MATTE TIN	1010MMMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e3			.000002 Amp	4.9 mm
NV25040DTVFT3G	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	512X8	512	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.2 mm		20 MHz	3 mm		4 ms	SPI	4096 bit	4.5 V	IT ALSO OPERATES AT 2.5 TO 4.5V SUPPLY VOLTAGE AT 10 MHZ FREQUENCY			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
CAT28LV256T13E-25	Onsemi	EEPROM	AUTOMOTIVE	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	125 Cel	32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL			R-PDSO-G28	2	3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	3 V		64	e0			.00015 Amp	11.8 mm	250 ns	3	YES
CAT25040HU4I-T3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel	512X8	512	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8		5.5 V	.8 mm		10 MHz	2 mm		5 ms	SPI	4096 bit	2.5 V			e4				3 mm
CAT24C64YE-T3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	8KX8	8K	-40 Cel			1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.4 mm
CAT24WC02YE-TE13REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24C04C4AI-GT3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		32 words	5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel	32X16	32	-40 Cel		MATTE TIN		BOTTOM			R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.8 V			e3				.856 mm
CAT24C16LI	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2 mA	64 words	5		2/5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	DIP8,.3	EEPROMs	100	.3 mm	125 Cel	64X16	64	-40 Cel		TIN	1010MMMR	BOTTOM		HARDWARE	R-PBGA-B5		5.5 V	.35 mm	1000000 Write/Erase Cycles	.4 MHz	.832 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V			e3		260	.000001 Amp	.856 mm
CAT24WC01WE-1.8TE13REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24FC32WE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	4KX8	4K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			e3			.00001 Amp	4.9 mm
CAT24C21YE-TE13REVB	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	128X8	128	-40 Cel		MATTE TIN		DUAL			R-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3				4.4 mm
CAT24FC01WE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V			e3			.00001 Amp	4.9 mm
CAT24WC01PE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25256HU4E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	4 mA	32768 words	5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel	32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V	100 YEAR DATA RETENTION		e4			.000003 Amp	3 mm
CAT24WC02YE-1.8REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25010SE-REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE					125 Cel	128X8	128	-40 Cel		TIN LEAD		DUAL			R-PDSO-G8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	1024 bit	2.5 V			e0
CAT25C33VE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	4KX8	4K	-40 Cel		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	10 ms	SPI	32768 bit	2.5 V			e3				4.9 mm
CAT25020GVE-REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE					125 Cel	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	2048 bit	2.5 V			e4
CAT25C32VE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	5			8	SMALL OUTLINE					125 Cel	4KX8	4K	-40 Cel				DUAL			R-PDSO-G8		6 V			1 MHz			10 ms	SPI	32768 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED
CAT24WC02GWE-1.8TE13REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.