AUTOMOTIVE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24FC256KE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	3		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	125 Cel	32KX8	32K	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	100000 Write/Erase Cycles	1 MHz	5.25 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e0			.00001 Amp	5.3 mm
CAT24C01BGYE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel		Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified			1024 bit				e0			.00001 Amp
CAT24C21RE-TE13REVB	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel	128X8	128	-40 Cel		TIN LEAD		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e0				3 mm
CAT24FC65KE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	1 MHz	5.25 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e0			.00001 Amp	5.3 mm
CAT24FC65KE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	1 MHz	5.25 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e0			.00001 Amp	5.3 mm
CAT24WC01PE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25C64PE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE						125 Cel	8KX8	8K	-40 Cel				DUAL		R-PDIP-T8		6 V			1 MHz			10 ms	SPI	65536 bit	1.8 V
CAT24FC16RD4E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		2/5	8	SMALL OUTLINE	SOLCC8,.12,25		EEPROMs	100	.635 mm	125 Cel	2KX8	2K	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	S-XDSO-N8		5.5 V		1000000 Write/Erase Cycles	.1 MHz		Not Qualified	5 ms	I2C	16384 bit	1.8 V			e0			.00001 Amp
CAT25C33GLE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5			8	IN-LINE					2.54 mm	125 Cel	4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDIP-T8		6 V	4.57 mm		3 MHz	7.62 mm	Not Qualified	10 ms	SPI	32768 bit	2.5 V			e4				9.59 mm
CAT24FC16JE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	2KX8	2K	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e0			.00001 Amp	4.9 mm
CAT24C32BLE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	2.5			8	IN-LINE					2.54 mm	125 Cel	4KX8	4K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDIP-T8		5.5 V	5.33 mm		1 MHz	7.62 mm		4 ms	I2C	32768 bit	1.8 V			e4				9.27 mm
CAT25C64VE-1.8-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V			1 MHz	3.9 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V			e4				4.8997 mm
CAT24C01BZE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel		Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified			1024 bit				e0			.00001 Amp
CAV25512VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		65536 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel	64KX8	64K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		10 MHz	3.9 mm		5 ms	SPI	524288 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED		4.9 mm
CAT25C11VE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V			e3			.00001 Amp	4.9 mm
CAV25040VE-G	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel	512X8	512	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		10 MHz	3.9 mm		5 ms	SPI	4096 bit	2.5 V			e4	30	260		4.9 mm
CAT25160LE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16384 words	5			1	IN-LINE					2.54 mm	125 Cel	16KX1	16K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDIP-T8		5.5 V	5.33 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V			e4				9.27 mm
CAT25010SE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE						125 Cel	128X8	128	-40 Cel		TIN LEAD		DUAL		R-PDSO-G8		5.5 V			1 MHz		Not Qualified	5 ms	SPI	1024 bit	1.8 V			e0
CAT25256VE-G	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		4 mA	32768 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	262144 bit				e4		260	.000003 Amp
CAT28LV256GE-30T	Onsemi	EEPROM	AUTOMOTIVE	32	QCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	125 Cel	32KX8	32K	-40 Cel	NO			QUAD		R-PQCC-N32		3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3	NOT SPECIFIED	NOT SPECIFIED	.00015 Amp	13.97 mm	300 ns	3	YES
CAT25020GVE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE						125 Cel	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V			1 MHz		Not Qualified	5 ms	SPI	2048 bit	1.8 V			e4
CAT24FC16YE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel	2KX8	2K	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e3			.00001 Amp	4.4 mm
CAT24WC66WE-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	2.5 V	100 YEAR DATA RETENTION		e4	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	4.9 mm
CAT24C01BGWE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel				DUAL		R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified			1024 bit							.00001 Amp
CAT25C03LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	256 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	1.8 V			e3				9.59 mm
CAT24WC01RE-1.8REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC16JE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	2048 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT24WC66WE-1.8-T3C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V	IT ALSO OPERATES AT 0.1MHZ AT 1.8MIN		e3			.000001 Amp	4.9 mm
CAT24WC164JE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	2KX8	2K	-40 Cel		TIN LEAD	1DDDMMMR	DUAL	HARDWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	1.8 V			e0			.00001 Amp	4.9 mm
CAT24C16ZIT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel	128X16	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4				4.4 mm
CAT24WC01GYE-TE13REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25040ZE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.65 mm	125 Cel	512X8	512	-40 Cel		NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V			e4	30	260	.000002 Amp	3 mm
CAT24C16TDE-G	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3		2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	125 Cel	16KX1	16K	-40 Cel		MATTE TIN	1010MMMR	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e3			.000002 Amp	2.9 mm
CAT24WC08PE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	1024 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel	1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT24WC04ZE-1.8TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel	512X8	512	-40 Cel			1010DDMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT24C21RD4E-TE13REVB	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	3			8	SMALL OUTLINE						125 Cel	128X8	128	-40 Cel		TIN LEAD		DUAL		S-XDSO-N8	1	5.5 V			.4 MHz		Not Qualified	5 ms	I2C	1024 bit	2.5 V			e0
CAT25C65SE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel		TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V			e0			.00001 Amp	4.9 mm
CAT25320YE-T3C	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel	4KX8	4K	-40 Cel		MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.2 mm		5 MHz	3 mm		5 ms	SPI	32768 bit	2.5 V			e3				4.4 mm
CAT25160VE-T3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	2KX8	2K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V	100 YEAR DATA RETENTION		e3	NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm
CAT24WC16LEREV-F	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	2048 words			3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel	2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT25040VE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel	512X8	512	-40 Cel		MATTE TIN		DUAL		R-PDSO-G8		6 V	1.75 mm		5 MHz	3.9 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V			e3				4.9 mm
CAT25C09GVE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	2.5			8	SMALL OUTLINE					1.27 mm	125 Cel	1KX8	1K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-G8		6 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	1.8 V			e4	40	260		4.9 mm
CAT24WC02WE-1.8TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24C01BRE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel		Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified			1024 bit				e0			.00001 Amp
CAT24FC02JE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e0			.00001 Amp	4.9 mm
CAT25C08YE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel	1KX8	1K	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	8192 bit	1.8 V			e3			.00001 Amp	4.4 mm
CAT25020PE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE						125 Cel	256X8	256	-40 Cel		TIN LEAD		DUAL		R-PDIP-T8		5.5 V			1 MHz		Not Qualified	5 ms	SPI	2048 bit	1.8 V			e0
CAT25040YE-GTD	Onsemi	EEPROM	AUTOMOTIVE	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	3.6			8	SMALL OUTLINE, THIN PROFILE		8		100	.65 mm	125 Cel	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.2 mm		10 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION		e4				4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.