INDUSTRIAL EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
BR24T1MF-3AME2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5		8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.71 mm		1 MHz	4.4 mm		5 ms	I2C	1048576 bit	1.7 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED			5 mm
BR25A256FJ-3MGE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	105 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.65 mm		5 MHz	3.9 mm		5 ms	SPI	262144 bit	2.5 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
BR25A512FJ-3MGE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	105 Cel		64KX8	64K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.65 mm		5 MHz	3.9 mm		5 ms	SPI	524288 bit	2.5 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
BR25G256F-3GE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	32768 words	5		8	SMALL OUTLINE	SOP8,.25		100	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel			DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.71 mm	1000000 Write/Erase Cycles	20 MHz	4.4 mm		5 ms	SPI	262144 bit	4.5 V	SEATED HT-CALCULATED;also operates with 10mhz @2.5V,5MHZ @1.7V,3MHZ@1.6V			NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	5 mm		5
BR25G512FVT-3GE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		64KX8	64K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.2 mm		10 MHz	3 mm		5 ms	SPI	524288 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED			4.4 mm
BR9010	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	3	3/5	16	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		64X16	64	-40 Cel	TIN COPPER		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		3.3 V	3.7 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		4-WIRE	1024 bit	2.7 V	OPERATES IN 5V/3V VCC, 100,000 ERASE/WRITE CYCLES, 10 YEARS DATA RETENTION		e2				.000003 Amp	9.3 mm
BRCF016GWZ-3E2	ROHM	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		2KX8	2K	-40 Cel			BOTTOM		R-PBGA-B4		5.5 V	.35 mm		1 MHz	.84 mm		5 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			.86 mm
NMC93C56EN	National Semiconductor	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words	5	5	16	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	3-STATE	128X16	128	-40 Cel	TIN LEAD		DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	100000 Write/Erase Cycles	.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V			e0				.00005 Amp	9.817 mm
TC58DVM72A1TG00	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		16777216 words	3.3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		16MX8	16M	-40 Cel			DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V								18.4 mm		3
XC18V02PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words	3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel	Matte Tin (Sn)		QUAD		S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified			2097152 bit	3 V			e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
AT17C128-10SI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5	5	1	SMALL OUTLINE	SOP20,.4	EEPROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20		5.5 V	2.65 mm			7.5 mm	Not Qualified			131072 bit	4.5 V			e0				.002 Amp	12.8 mm	55 ns
AT17C256-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	5	5	1	IN-LINE	DIP8,.3	EEPROMs		2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8		5.5 V	4.318 mm		12.5 MHz	7.62 mm	Not Qualified			262144 bit	4.5 V			e0				.00015 Amp	9.398 mm	55 ns
AT17F040-30VJI	Microchip Technology	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	20 mA	4194304 words	3.3	3/3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories		1.27 mm	85 Cel		4MX1	4M	-40 Cel	TIN LEAD		QUAD		S-PQCC-J20	2	3.63 V	4.572 mm		33 MHz	8.9662 mm	Not Qualified	.03 ms		4194304 bit	2.97 V			e0			NOR TYPE	.001 Amp	8.9662 mm
AT24C01A-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel	Tin/Lead (Sn/Pb)	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.7 V	DATA RETENTION = 100 YEARS		e0	30	240		.000004 Amp	4.9 mm
AT24C01BU3-UU-T	Microchip Technology	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		128X8	128	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.91 mm		1 MHz	1.5 mm		5 ms	I2C	1024 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED			2 mm
AT24C02AN-10SI-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		256X8	256	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e0				.000003 Amp	4.9 mm
AT24C02B-10PU-1.8	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3		260		.000003 Amp	9.271 mm
AT24C02B-10TU-1.8	Atmel	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3		260		.000003 Amp	4.4 mm
AT24C02N-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000003 Amp	4.9 mm
AT24C04-10PU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	4096 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000004 Amp	9.271 mm
AT24C04-10TU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000003 Amp	4.4 mm
AT24C04-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000004 Amp	4.4 mm
AT24C04A-10TU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000003 Amp	4.4 mm
AT24C04A-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000004 Amp	4.4 mm
AT24C04AN-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V			e3		260		.000003 Amp	4.9 mm
AT24C04N-10SI-1.8	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	DATA RETENTION = 100 YEARS		e0	30	240		.000003 Amp	4.9 mm
AT24C08A-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		1KX8	1K	-40 Cel	Matte Tin (Sn)	1010DMMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3	40	260		.000004 Amp	4.4 mm
AT24C08AN-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		1KX8	1K	-40 Cel	Matte Tin (Sn)	1010DMMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3	40	260		.000003 Amp	4.9 mm
AT24C08N-10SI	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0	30	240		.000018 Amp	4.89 mm
AT24C1024-10PI-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	10100DMR	DUAL	HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1048576 bit	2.7 V			e0				.000003 Amp	9.271 mm
AT24C128-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		40	.65 mm	85 Cel		16KX8	16K	-40 Cel		10100DDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		10 ms	I2C	131072 bit	4.5 V	ALSO OPERATES AT 0.4MHZ AT 2.7VMIN SUPPLY	64					.000006 Amp	4.4 mm		5
AT24C128BN-SH-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		16KX8	16K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			e4	40	260		.000001 Amp	4.9 mm
AT24C128T1-10TI-2.7	Atmel	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-40 Cel	TIN LEAD	10100DDR	DUAL	HARDWARE	R-PDSO-G14	2	5.5 V	1.2 mm	100000 Write/Erase Cycles	1 MHz	4.4 mm	Not Qualified	10 ms	I2C	131072 bit	2.7 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION 40 YEARS		e0		240		.0000005 Amp	5 mm
AT24C16A-10TU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	1010MMMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000003 Amp	4.4 mm
AT24C16B-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		8	IN-LINE	DIP8,.3		100	2.54 mm	85 Cel		2KX8	2K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	16384 bit	1.8 V							.000006 Amp	9.271 mm		5
AT24C16N-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.7 V	DATA RETENTION = 100 YEARS		e0				.000004 Amp	4.9 mm
AT24C256B-10PU-1.8	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5	2/3.3	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	1	3.6 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e3				.000001 Amp	9.271 mm
AT24C256BN-SH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		32KX8	32K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e4	40	260		.000001 Amp	4.9 mm
AT24C32CY6-YH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.11,20		100	.5 mm	85 Cel		4KX8	4K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	32768 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY	32					.000006 Amp	3 mm		5
AT24C512-10TU-1.8	Atmel	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words	2.7	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	10100DDR	DUAL	HARDWARE	R-PDSO-G8	1	3.6 V	1.2 mm	100000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	20 ms	I2C	524288 bit	1.8 V			e3		260		.000001 Amp	4.4 mm
AT24C64A-10TI-2.7	Atmel	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	20 ms	I2C	65536 bit	2.7 V			e0				.000002 Amp	4.4 mm
AT24C64AN-10SU-1.8	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	20 ms	I2C	65536 bit	1.8 V			e3	40	260		.000001 Amp	4.9 mm
AT24C64AY6-10YH-1.8	Atmel	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	20 ms	I2C	65536 bit	1.8 V			e4					3 mm
AT24HC02B-10TU-1.8	Atmel	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8	1	5.5 V	1.2 mm			3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3					4.4 mm
AT24HC02BN-10SU-1.8	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE				1.27 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm			3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3		260			4.9 mm
AT25040AN-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	512 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		512X8	512	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	4096 bit	2.7 V			e0	30	240		.000001 Amp	4.9 mm
AT25040N-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	6 mA	512 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	3-STATE	512X8	512	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	4096 bit	2.7 V	HARDWARE AND SOFTWARE DATA PROTECTION		e0				.000005 Amp	4.9 mm
AT25256AW-10SQ-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	2.16 mm		10 MHz	5.24 mm		5 ms	SPI	262144 bit	2.7 V								5.29 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.