MILITARY EEPROM 238

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28C256-20FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL			R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles		10.16 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	18.285 mm	200 ns	5	YES
25LC512-E/SN16KVAO	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5			8	SMALL OUTLINE	SOP8,.25		200	1.27 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz						.00001 Amp	4.9 mm		5
AT28C256-15LM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		QUAD			R-CQCC-N32		5.5 V	2.54 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	13.97 mm	150 ns	5	YES
24LC16B-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel	OPEN-DRAIN	2KX8	2K	-55 Cel		Matte Tin (Sn)	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm		5
AT28HC256-12LM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		QUAD			R-CQCC-N32	1	5.5 V	2.54 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	13.97 mm	120 ns	5	YES
AT28C256-25DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	125 Cel		32KX8	32K	-55 Cel				DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm		10 ms		262144 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED			37.215 mm	250 ns	5
AT28HC256-12FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	10	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL			R-CDFP-F28		5.5 V	3.02 mm	10000 Write/Erase Cycles		10.16 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	18.285 mm	120 ns	5	YES
AT28C256-15UM/883	Microchip Technology	EEPROM	MILITARY	28	PGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class C	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	GRID ARRAY	PGA28,5X6	EEPROMs		2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		PERPENDICULAR			R-CPGA-P28		5.5 V	4.4 mm	10000 Write/Erase Cycles		13.97 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	16.51 mm	150 ns	5	YES
5962-8751418XA	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE			10	2.54 mm	125 Cel		8KX8	8K	-55 Cel		TIN LEAD		DUAL			R-GDIP-T28		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified			65536 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0					37.25 mm	350 ns	5
25LC512-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel		64KX8	64K	-55 Cel		MATTE TIN		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	524288 bit	2.5 V			e3	30	260		.00002 Amp	4.9 mm		5
AT28C010-12EM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	NO	TIN LEAD		QUAD			R-CQCC-N32		5.5 V	2.54 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS	128	e0				.0003 Amp	13.97 mm	120 ns	5	YES
AT28C256F-15DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6		10	2.54 mm	125 Cel		32KX8	32K	-55 Cel	NO			DUAL	1		R-GDIP-T28		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm		3 ms		262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED		.0003 Amp	37.215 mm	150 ns	5	YES
AT28C010E-12EM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	NO	TIN LEAD		QUAD	1	HARDWARE/SOFTWARE	R-CQCC-N32		5.5 V	2.54 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e0				.0003 Amp	13.97 mm	120 ns	5	YES
25LC512T-E/SN16KVAO	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5			8	SMALL OUTLINE	SOP8,.25		200	1.27 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz						.00001 Amp	4.9 mm		5
AT28C256-20DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5			8	IN-LINE	DIP28,.6		10	2.54 mm	125 Cel		32KX8	32K	-55 Cel	NO			DUAL		HARDWARE/SOFTWARE	R-GDIP-T28		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm		10 ms		262144 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED		.0003 Amp	37.215 mm	200 ns	5	YES
24LC16BT-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		2KX8	2K	-55 Cel		Matte Tin (Sn)	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm		5
5962-8852508XA	Defense Logistics Agency	EEPROM	MILITARY		DIP		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE					125 Cel		32KX8	32K	-55 Cel		TIN LEAD		DUAL					5.5 V					Not Qualified	10 ms		262144 bit	4.5 V			e0						150 ns	5
AT28C256-15FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL			R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles		10.16 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	18.285 mm	150 ns	5	YES
AT28C256-15DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	125 Cel		32KX8	32K	-55 Cel		TIN LEAD		DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm		10 ms		262144 bit	4.5 V		64	e0					37.215 mm	150 ns	5
AT28C256E-25DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6		10	2.54 mm	125 Cel		32KX8	32K	-55 Cel	NO			DUAL	1		R-GDIP-T28		5.5 V	5.72 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED		.0003 Amp	37.215 mm	250 ns	5	YES
AT28C256E-15FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	10	1.27 mm	125 Cel		32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL	1		R-CDFP-F28	1	5.5 V	3.02 mm	100000 Write/Erase Cycles		10.16 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	18.285 mm	150 ns	5	YES
X24C16PM-3	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3			8	IN-LINE				2.54 mm	125 Cel		2KX8	2K	-55 Cel				DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V								9.585 mm
X24C16PMB-2.7	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3			8	IN-LINE				2.54 mm	125 Cel		2KX8	2K	-55 Cel				DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V								9.585 mm
X24C16PMB-3.5	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				2.54 mm	125 Cel		2KX8	2K	-55 Cel				DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3.5 V								9.585 mm
AT28HC256F-90DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6		10	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL	1	HARDWARE/SOFTWARE	R-GDIP-T28	1	5.5 V	5.72 mm			15.24 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	37.215 mm	90 ns	5	YES
X24C16PM	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				2.54 mm	125 Cel		2KX8	2K	-55 Cel				DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V								9.585 mm
X24C16PM-2.7	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3			8	IN-LINE				2.54 mm	125 Cel		2KX8	2K	-55 Cel				DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V								9.585 mm
X24C16PM-3.5	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				2.54 mm	125 Cel		2KX8	2K	-55 Cel				DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3.5 V								9.585 mm
X24C16PMB	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				2.54 mm	125 Cel		2KX8	2K	-55 Cel				DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V								9.585 mm
X24C16PMB-3	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3			8	IN-LINE				2.54 mm	125 Cel		2KX8	2K	-55 Cel				DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V								9.585 mm
5962-8852507ZA	Defense Logistics Agency	EEPROM	MILITARY		DFP		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		32768 words	5			8	FLATPACK				1.27 mm	125 Cel		32KX8	32K	-55 Cel		TIN LEAD		DUAL					5.5 V	3.02 mm			10.16 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE		e0	NOT SPECIFIED	NOT SPECIFIED			18.285 mm	150 ns	5
XQF32PVOG48M	Xilinx	CONFIGURATION MEMORY	MILITARY	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	40 mA	33554432 words	1.8		1.8/3.3,1.8	1	SMALL OUTLINE	TSSOP48,.8,20	Flash Memories	20	.5 mm	125 Cel		32MX1	32M	-55 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G48	3	2 V		20000 Write/Erase Cycles			Not Qualified			33554432 bit	1.65 V			e4	30	260	NOR TYPE			30 ns
5962-3826707MZA	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel		128KX8	128K	-55 Cel	NO			DUAL			R-XDFP-F32		5.5 V	3.048 mm	10000 Write/Erase Cycles		11.6586 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0	NOT SPECIFIED	NOT SPECIFIED		.00085 Amp	20.85 mm	120 ns	5	YES
5962-8852505XA	Defense Logistics Agency	EEPROM	MILITARY	28	DIP		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE					125 Cel		32KX8	32K	-55 Cel		TIN LEAD		DUAL					5.5 V					Not Qualified	10 ms		262144 bit	4.5 V			e0						250 ns	5
5962-8852505XX	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	125 Cel		32KX8	32K	-55 Cel				DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm	Not Qualified			262144 bit	4.5 V								37.215 mm	250 ns	5
AT28C010-12DM/883	Microchip Technology	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE				2.54 mm	125 Cel		128KX8	128K	-55 Cel				DUAL			R-GDIP-T32		5.5 V	5.72 mm			15.24 mm		10 ms		1048576 bit	4.5 V								42.2 mm	120 ns	5
AT28C256-25FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL			R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles		10.16 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	18.285 mm	250 ns	5	YES
AT28C256F-15FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	10	1.27 mm	125 Cel		32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL	1		R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles		10.16 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	18.285 mm	150 ns	5	YES
25LC512T-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel		64KX8	64K	-55 Cel		MATTE TIN		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	524288 bit	2.5 V			e3				.00002 Amp	4.9 mm		5
25LC640A-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		8KX8	8K	-55 Cel		Matte Tin (Sn)		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	4.5 V	2.5V TO 4.5V @ 5MHz		e3	30	260		.000005 Amp	4.9 mm		5
AT28C010-12FM/883	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs	10	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	NO	TIN LEAD		DUAL			R-CDFP-F32		5.5 V	3.05 mm	10000 Write/Erase Cycles		12.2 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS	128	e0				.0003 Amp	20.85 mm	120 ns	5	YES
AT28C010-15DM/883	Microchip Technology	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	5	YES		8	IN-LINE	DIP32,.6		10	2.54 mm	125 Cel		128KX8	128K	-55 Cel	NO			DUAL		HARDWARE/SOFTWARE	R-GDIP-T32		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm		10 ms		1048576 bit	4.5 V		128					.0003 Amp	42.2 mm	150 ns	5	YES
AT28C010E-12FM/883	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	5	YES		8	FLATPACK			10	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	NO			DUAL	1	HARDWARE/SOFTWARE	R-CDFP-F32		5.5 V	3.05 mm	100000 Write/Erase Cycles		12.15 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128					.0003 Amp	20.8 mm	120 ns	5	YES
AT28C256-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	125 Cel		32KX8	32K	-55 Cel		TIN LEAD		DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm		10 ms		262144 bit	4.5 V			e0					37.215 mm	150 ns	5
AT28C256F-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6		10	2.54 mm	125 Cel		32KX8	32K	-55 Cel	NO			DUAL	1		R-GDIP-T28		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm		3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64					.0003 Amp	37.215 mm	150 ns	5	YES
AT28HC256-90DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6		10	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL			R-GDIP-T28	1	5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	37.215 mm	90 ns	5	YES
AT28HC256-90FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	10	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL			R-CDFP-F28		5.5 V	3.02 mm	10000 Write/Erase Cycles		10.16 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	18.285 mm	90 ns	5	YES
M38510/26104BZX	Texas Instruments	EEPROM	MILITARY	28	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		32768 words	5			8	FLATPACK					125 Cel		32KX8	32K	-55 Cel				DUAL			R-XDFP-F28		5.5 V					Not Qualified	10 ms		262144 bit	4.5 V									200 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.