MILITARY EEPROM 238

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
XQR17V16CK44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCN	RECTANGULAR	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words		3.3		1	CHIP CARRIER		1				125 Cel		16MX1	16M	-55 Cel		QUAD	R-CQCC-N44		3.6 V			20 MHz			16777216 bit	3 V
XQ17V16VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm		33 MHz	10 mm	Not Qualified	16777216 bit	3 V		e0	30	240		.001 Amp	10 mm	20 ns
XQ18V04VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	40k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	50 mA	524288 words		3.3	2.5/3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	10	.8 mm	125 Cel		512KX8	512K	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	4194304 bit	3 V		e0	30	240	NOR TYPE	.02 Amp	10 mm
XQ18V04VQG44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	40k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	125 Cel		512KX8	512K	-55 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	4194304 bit	3 V		e3	30	260			10 mm
XQR17V16VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	50k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e0	30	240		.001 Amp	10 mm
XQR17V16VQG44R	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	50k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		2097152 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	125 Cel		2MX8	2M	-55 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e3	30	260			10 mm
XQ17V16CC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm		33 MHz	16.51 mm	Not Qualified	16777216 bit	3 V		e0				.001 Amp	16.51 mm	20 ns
XQR1701LCCG44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e3					16.51 mm
XQ17V16CCG44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		2097152 words		3.3		8	CHIP CARRIER					1.27 mm	125 Cel		2MX8	2M	-55 Cel		QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			16.51 mm	20 ns
XQ1701LCC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LCC44(UNSPEC)		OTP ROMs		1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e0				.0001 Amp	16.51 mm	45 ns	3.3
XQ1701LSO20N	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4		OTP ROMs		1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified	1048576 bit	3 V		e0	30	225		.00005 Amp	12.8 mm
XQ17V16VQG44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		2097152 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	125 Cel		2MX8	2M	-55 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e3	30	260			10 mm	20 ns
XQ1704LCCG44B	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1		MIL-PRF-38535	J BEND		SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		4MX1	4M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e3					16.51 mm
XQ1704LCCG44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1		MIL-PRF-38535	J BEND		SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		4MX1	4M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e3					16.51 mm
XQR18V04CCG44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	40k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		512 words		3.3		8	CHIP CARRIER					1.27 mm	125 Cel		512X8	512	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4096 bit	3 V		e3					16.51 mm
XQR17V16CC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	16777216 bit	3 V		e0				.001 Amp	16.51 mm
XQR18V04CCG44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	40k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		512 words		3.3		8	CHIP CARRIER					1.27 mm	125 Cel		512X8	512	-55 Cel		QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4096 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			16.51 mm
XQR1704LCCG44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1		MIL-PRF-38535	J BEND		SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		4MX1	4M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e3					16.51 mm
XQR1701LCC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e0					16.51 mm
XQ1704LPC44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm			16.5862 mm	Not Qualified	4194304 bit	3 V		e0					16.5862 mm
XQR17V16VQG44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	50k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		2097152 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	125 Cel		2MX8	2M	-55 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e3	30	260			10 mm
XQ1704LPCG44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1			J BEND		SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		4MX1	4M	-55 Cel	MATTE TIN	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm			16.5862 mm	Not Qualified	4194304 bit	3 V		e3					16.5862 mm
XQ1701LSOG20N	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE					1.27 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified	1048576 bit	3 V		e3	30	260			12.8 mm
XQR18V04CC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	40k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	50 mA	512 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	10	1.27 mm	125 Cel		512X8	512	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm	2000 Write/Erase Cycles	20 MHz	16.51 mm	Not Qualified	4096 bit	3 V		e0			NOR TYPE	.02 Amp	16.51 mm
XQR18V04CC44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	40k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	50 mA	512 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	10	1.27 mm	125 Cel		512X8	512	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44	1	3.6 V	4.826 mm	2000 Write/Erase Cycles	20 MHz	16.51 mm	Not Qualified	4096 bit	3 V		e0			NOR TYPE	.02 Amp	16.51 mm
XQ1701LCC44B	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e0				.0001 Amp	16.51 mm	45 ns	3.3
XQ1701LCCG44B	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e3				.0001 Amp	16.51 mm	45 ns	3.3
XQ18V04CC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	40k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	50 mA	524288 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	10	1.27 mm	125 Cel		512KX8	512K	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm	2000 Write/Erase Cycles	20 MHz	16.51 mm	Not Qualified	4194304 bit	3 V		e0			NOR TYPE	.02 Amp	16.51 mm
XQR1701LCC44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		1MX1	1M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e0					16.51 mm
XQF32PVO48M	Xilinx	CONFIGURATION MEMORY	MILITARY	48	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		33554432 words		1.8		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	125 Cel		32MX1	32M	-55 Cel	TIN LEAD	DUAL	R-PDSO-G48	3	2 V	1.2 mm			12 mm	Not Qualified	33554432 bit	1.65 V		e0					18.45 mm	30 ns
XQ1704LCC44B	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e0					16.51 mm
XQ1704LCC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e0					16.51 mm
XQR17V16CK44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCN	RECTANGULAR	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words		3.3		1	CHIP CARRIER		1				125 Cel		16MX1	16M	-55 Cel		QUAD	R-CQCC-N44		3.6 V			20 MHz			16777216 bit	3 V
XQR17V16CC44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	16777216 bit	3 V		e0				.001 Amp	16.51 mm
XQR1701LCCG44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e3					16.51 mm
XQR1704LCC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e0					16.51 mm
XQR17V16VQ44R	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	50k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e0	30	240		.001 Amp	10 mm
5962-9951401QYA	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	TIN LEAD	QUAD	S-GQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e0				.0001 Amp	16.51 mm	45 ns	3
5962-9471701MPX	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		5		1	IN-LINE						125 Cel		64KX1	64K	-55 Cel		DUAL	R-GDIP-T8		5.5 V			5 MHz		Not Qualified	65536 bit	4.5 V
XC1736D-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	36288X1	36288	-55 Cel	TIN LEAD	DUAL	R-GDIP-T8	1	5.5 V	4.318 mm		5 MHz	7.62 mm	Not Qualified	36288 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0				.0015 Amp	9.906 mm
XC1701-PDG8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		1048576 words		5		1	IN-LINE					2.54 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm			7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	30	250			9.3599 mm	45 ns
XC1765D-DD8R	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T8	1	5.5 V	4.318 mm		5 MHz	7.62 mm	Not Qualified	65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0				.0015 Amp	9.906 mm
XC1701-PCG20M	Xilinx	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		1048576 words		5		1	CHIP CARRIER					1.27 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	5.5 V	4.57 mm			8.9662 mm	Not Qualified	1048576 bit	4.5 V		e3					8.9662 mm	45 ns
XC17256D-DDG8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		262144 words		5		1	IN-LINE					2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel	MATTE TIN	DUAL	R-GDIP-T8		5.5 V	4.318 mm			7.62 mm	Not Qualified	262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3					9.906 mm
5962-9561701MPX	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		262144 words		5		1	IN-LINE						125 Cel		256KX1	256K	-55 Cel		DUAL	R-GDIP-T8		5.5 V			12.5 MHz		Not Qualified	262144 bit	4.5 V
XC17128D-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	128KX1	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T8	1	5.5 V	4.318 mm		12.5 MHz	7.62 mm	Not Qualified	131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0				.00005 Amp	9.906 mm
XC1701-SO20M	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		5		1	SMALL OUTLINE					1.27 mm	125 Cel		1MX1	1M	-55 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	5.5 V	2.65 mm			7.5 mm	Not Qualified	1048576 bit	4.5 V		e0					12.8 mm	45 ns
5962-9561701MPA	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T8		5.5 V	5.08 mm		12.5 MHz	7.62 mm	Not Qualified	262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0				.00005 Amp	10.16 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.