MILITARY EEPROM 238

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Data Polling
X28C512RMB-20	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDSO-G32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		200 ns	YES
X28C512JMB-20	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		200 ns	YES
X28C512TM-15	Renesas Electronics	EEPROM	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	EEPROMs	.5 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDSO-G40			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		150 ns	YES
78C18A75LB	Renesas Electronics	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL		125 mA	2048 words		5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	1.27 mm	125 Cel		2KX8	2K	-55 Cel	YES	TIN LEAD	QUAD	R-XQCC-N32						Not Qualified		16384 bit				e0		.0009 Amp		75 ns	YES
X28C512KMB-90	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL		50 mA	65536 words		5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		90 ns	YES
X28C512KM-90	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words		5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		90 ns	YES
X28C512PM-20	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDIP-T32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		200 ns	YES
X28C512JMB-15	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		150 ns	YES
X28C512RM-12	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDSO-G32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		120 ns	YES
X28C512JMB-90	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		90 ns	YES
X28C512TM-25	Renesas Electronics	EEPROM	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	EEPROMs	.5 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDSO-G40			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		250 ns	YES
X28C512TM-12	Renesas Electronics	EEPROM	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	EEPROMs	.5 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDSO-G40			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		120 ns	YES
X28C512FM-90	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words		5	YES	5	8	FLATPACK	FL32,.5	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		90 ns	YES
IDT78C18A75LB	Renesas Electronics	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL		125 mA	2048 words		5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	1.27 mm	125 Cel		2KX8	2K	-55 Cel	YES	TIN LEAD	QUAD	R-XQCC-N32						Not Qualified		16384 bit				e0		.0009 Amp		75 ns	YES
X28C512PMB-20	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDIP-T32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		200 ns	YES
X28C512PMB-90	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDIP-T32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		90 ns	YES
X28C512JM-90	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		90 ns	YES
X28C010FM-25	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	131072 words		5	YES	5	8	FLATPACK	FL32,.5	EEPROMs	1.27 mm	125 Cel		128KX8	128K	-55 Cel	NO		DUAL	R-XDFP-F32						Not Qualified		1048576 bit			256			.0005 Amp		250 ns	YES
X28C512RMB-25	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDSO-G32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		250 ns	YES
X28C512RMB-90	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDSO-G32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		90 ns	YES
X28C010KM-15	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	131072 words		5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs	2.54 mm	125 Cel		128KX8	128K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36						Not Qualified		1048576 bit			256			.0005 Amp		150 ns	YES
X28C512RM-90	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDSO-G32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		90 ns	YES
X28C512PM-25	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDIP-T32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		250 ns	YES
X28C512FMB-90	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL		50 mA	65536 words		5	YES	5	8	FLATPACK	FL32,.5	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		90 ns	YES
X28C512TMB-15	Renesas Electronics	EEPROM	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	EEPROMs	.5 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDSO-G40			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		150 ns	YES
X28C512DM-25	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDIP-T32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		250 ns	YES
X28C010DM-20	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	131072 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		128KX8	128K	-55 Cel	NO		DUAL	R-XDIP-T32						Not Qualified		1048576 bit			256			.0005 Amp		200 ns	YES
X28C512FM-25	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words		5	YES	5	8	FLATPACK	FL32,.5	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDFP-F32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		250 ns	YES
X28C512PM-12	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDIP-T32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		120 ns	YES
X28C512TMB-90	Renesas Electronics	EEPROM	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	EEPROMs	.5 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDSO-G40			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		90 ns	YES
X28C512JMB-12	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		120 ns	YES
X28C512KMB-20	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL		50 mA	65536 words		5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128			.0005 Amp		200 ns	YES
EPC1213D59628	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		212992 words		5			1	IN-LINE			2.54 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel			DUAL	R-GDIP-T8	5.5 V	5.08 mm			7.62 mm	Not Qualified		212992 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					9.65 mm
EPC1064TM	Altera	CONFIGURATION MEMORY	MILITARY	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words		5			1	FLATPACK, LOW PROFILE			.8 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		MATTE TIN	QUAD	S-PQFP-G32	5.25 V	1.27 mm			7 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES		e3			7 mm
EPC1064VTM	Altera	CONFIGURATION MEMORY	MILITARY	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words		3.3			1	FLATPACK, LOW PROFILE			.8 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		MATTE TIN	QUAD	S-PQFP-G32	3.6 V	1.27 mm			7 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES		e3			7 mm
EPC1213PM8	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		212992 words		5			1	IN-LINE			2.54 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel			DUAL	R-PDIP-T8	5.5 V	4.318 mm			7.62 mm	Not Qualified		212992 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					9.398 mm
EPC1213LM	Altera	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		212992 words		5			1	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel			QUAD	S-PQCC-J20	5.25 V	4.57 mm			8.9662 mm	Not Qualified		212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					8.9662 mm
EPC1064PM	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		5			1	IN-LINE			2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel			DUAL	R-PDIP-T8	5.25 V	4.318 mm			7.62 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					9.398 mm
EPC1064LM	Altera	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		65536 words		5			1	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel			QUAD	S-PQCC-J20	5.25 V	4.57 mm			8.9662 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					8.9662 mm
EPC1213PM	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		212992 words		5			1	IN-LINE			2.54 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel			DUAL	R-PDIP-T8	5.25 V	4.318 mm			7.62 mm	Not Qualified		212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					9.398 mm
EPC1064VPM	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		3.3			1	IN-LINE			2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel			DUAL	R-PDIP-T8	3.6 V	4.318 mm			7.62 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					9.398 mm
EPC1213LM20	Altera	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		212992 words		5			1	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel			QUAD	S-PQCC-J20	5.5 V	4.57 mm			8.9662 mm	Not Qualified		212992 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					8.9662 mm
EPC1064VLM	Altera	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		65536 words		3.3			1	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel			QUAD	S-PQCC-J20	3.6 V	4.57 mm			8.9662 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					8.9662 mm
EPC1213DM8	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		26624 words	COMMON	5		5	8	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	26KX8	26K	-55 Cel		TIN LEAD	DUAL	R-GDIP-T8	5.25 V	5.08 mm		6 MHz	7.62 mm	Not Qualified		212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES, ALSO OPERATES WITH 3V-3.6V		e0	220		9.65 mm
5962-9474501MPX	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		262144 words		5			1	IN-LINE			2.54 mm	125 Cel		256KX1	256K	-55 Cel		TIN LEAD	DUAL	R-GDIP-T8	5.25 V	5.08 mm		6 MHz	7.62 mm	Not Qualified		262144 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES		e0			9.65 mm
5962-9474501MPA	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		262144 words		5			1	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		TIN LEAD	DUAL	R-GDIP-T8	5.25 V	5.08 mm		6 MHz	7.62 mm	Not Qualified		262144 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES		e0	220		9.65 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.