MILITARY EEPROM 238

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
XC1765EDD8B	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		TIN LEAD	DUAL	R-CDIP-T8	1	5.5 V	5.08 mm		5 MHz	7.62 mm	Not Qualified		65536 bit	4.5 V			e0			.0015 Amp	10.16 mm
5962-9951401NXB	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class N	GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		TIN LEAD	DUAL	R-PDSO-G20		3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified		1048576 bit	3 V			e0			.00005 Amp	12.8 mm
XC1701-SOG20M	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		5			1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	-55 Cel		MATTE TIN	DUAL	R-PDSO-G20	3	5.5 V	2.65 mm			7.5 mm	Not Qualified		1048576 bit	4.5 V			e3				12.8 mm	45 ns
5962-9951401NXX	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class N	GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3			1	SMALL OUTLINE				125 Cel		1MX1	1M	-55 Cel			DUAL	R-PDSO-G20		3.6 V			15 MHz		Not Qualified		1048576 bit	3 V
XC1765-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		TIN LEAD	DUAL	R-GDIP-T8		5.5 V	5.08 mm		2.5 MHz	7.62 mm	Not Qualified		65536 bit	4.5 V			e0			.0005 Amp	9.906 mm
XC1736A-CD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	36288X1	36288	-55 Cel		TIN LEAD	DUAL	R-CDIP-T8		5.5 V	3.4036 mm		2.5 MHz	7.62 mm	Not Qualified		36288 bit	4.5 V			e0			.0005 Amp	13.208 mm		15
XC17256D-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		TIN LEAD	DUAL	R-GDIP-T8		5.5 V	4.318 mm		12 MHz	7.62 mm	Not Qualified		262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0			.00005 Amp	9.906 mm
5962-9951401QXB	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1		MIL-PRF-38535 Class Q	GULL WING		SYNCHRONOUS		1048576 words		3.3			1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	-55 Cel		TIN LEAD	DUAL	R-PDSO-G20		3.6 V	2.65 mm			7.5 mm	Not Qualified		1048576 bit	3 V			e0				12.8 mm
XC17256DDD8B	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		TIN LEAD	DUAL	R-GDIP-T8	1	5.5 V	5.08 mm		12 MHz	7.62 mm	Not Qualified		262144 bit	4.5 V			e0			.00005 Amp	10.16 mm
XC1736A-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		36288 words		5			1	IN-LINE			2.54 mm	125 Cel	3-STATE	36288X1	36288	-55 Cel			DUAL	R-CDIP-T8		5.5 V	5.08 mm			7.62 mm	Not Qualified		36288 bit	4.5 V							9.906 mm
XC1765-CD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		TIN LEAD	DUAL	R-CDIP-T8		5.5 V	3.4036 mm		2.5 MHz	7.62 mm	Not Qualified		65536 bit	4.5 V			e0			.0005 Amp	13.208 mm
XC1765DDD8B	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		TIN LEAD	DUAL	R-GDIP-T8	1	5.5 V	5.08 mm		5 MHz	7.62 mm	Not Qualified		65536 bit	4.5 V			e0			.0015 Amp	10.16 mm
XC17128-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	128KX1	128K	-55 Cel		TIN LEAD	DUAL	R-GDIP-T8		5.5 V	4.318 mm		10 MHz	7.62 mm	Not Qualified		131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0			.0005 Amp	9.906 mm
XC17128D-DDG8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		131072 words		5			1	IN-LINE			2.54 mm	125 Cel	3-STATE	128KX1	128K	-55 Cel			DUAL	R-GDIP-T8		5.5 V	4.318 mm			7.62 mm	Not Qualified		131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS						9.906 mm
XC1765-DD8R	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		5			1	IN-LINE			2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel			DUAL	R-GDIP-T8		5.5 V	5.08 mm			7.62 mm	Not Qualified		65536 bit	4.5 V							9.906 mm
XCF32PVOG48M	Xilinx	CONFIGURATION MEMORY	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words		1.8			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	125 Cel		32MX1	32M	-55 Cel		NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G48	3	2 V	1.2 mm			12 mm	Not Qualified		33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e4	30	260		18.45 mm
XC17256EDD8B	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		TIN LEAD	DUAL	R-CDIP-T8		5.5 V	5.08 mm		12.5 MHz	7.62 mm	Not Qualified		262144 bit	4.5 V			e0			.00005 Amp	10.16 mm
5962-9951401QYX	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3			1	CHIP CARRIER				125 Cel		1MX1	1M	-55 Cel			QUAD	S-GQCC-J44		3.6 V			15 MHz		Not Qualified		1048576 bit	3 V						.00005 Amp		45 ns	3.3
5962-9951401QXA	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1		MIL-PRF-38535 Class Q	GULL WING		SYNCHRONOUS		1048576 words		3.3			1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	-55 Cel		TIN LEAD	DUAL	R-PDSO-G20		3.6 V	2.65 mm			7.5 mm	Not Qualified		1048576 bit	3 V			e0				12.8 mm
XC17256EDD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		TIN LEAD	DUAL	R-CDIP-T8		5.5 V	5.08 mm		12.5 MHz	7.62 mm	Not Qualified		262144 bit	4.5 V			e0			.00005 Amp	10.16 mm
XC1765D-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		TIN LEAD	DUAL	R-GDIP-T8		5.5 V	4.318 mm		5 MHz	7.62 mm	Not Qualified		65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0			.0015 Amp	9.906 mm
XC1701-PD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		1048576 words		5			1	IN-LINE			2.54 mm	125 Cel		1MX1	1M	-55 Cel		TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm			7.62 mm	Not Qualified		1048576 bit	4.5 V			e0				9.3599 mm	45 ns
XC17256D-DDG8B	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		262144 words		5			1	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		MATTE TIN	DUAL	R-GDIP-T8		5.5 V	4.318 mm			7.62 mm	Not Qualified		262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3				9.906 mm
XC1701-PC20M	Xilinx	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		1048576 words		5			1	CHIP CARRIER			1.27 mm	125 Cel		1MX1	1M	-55 Cel		TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.57 mm			8.9662 mm	Not Qualified		1048576 bit	4.5 V			e0				8.9662 mm	45 ns
5962-9471701MPA	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		TIN LEAD	DUAL	R-GDIP-T8		5.5 V	5.08 mm		5 MHz	7.62 mm	Not Qualified		65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0			.0015 Amp	10.16 mm
XC1765EDD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		TIN LEAD	DUAL	R-CDIP-T8		5.5 V	5.08 mm		5 MHz	7.62 mm	Not Qualified		65536 bit	4.5 V			e0			.0015 Amp	10.16 mm
5962-9951401QYB	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3			1	CHIP CARRIER			1.27 mm	125 Cel		1MX1	1M	-55 Cel		TIN LEAD	QUAD	S-GQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified		1048576 bit	3 V			e0			.0003 Amp	16.51 mm	45 ns	3.3
X28C512KMB-12	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL		50 mA	65536 words		5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		120 ns		YES
X28C512RM-15	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDSO-G32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		150 ns		YES
X28C512JMB-25	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-PQCC-J32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		250 ns		YES
X28C512DM-90	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDIP-T32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C512TM-90	Renesas Electronics	EEPROM	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	EEPROMs	.5 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C512DMB-90	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDIP-T32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C512RM-20	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDSO-G32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		200 ns		YES
X28C512TMB-25	Renesas Electronics	EEPROM	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	EEPROMs	.5 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		250 ns		YES
X28C512EMB-12	Renesas Electronics	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL		50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-XQCC-N32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		120 ns		YES
X28C512TMB-20	Renesas Electronics	EEPROM	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	EEPROMs	.5 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		200 ns		YES
X28C512PM-15	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDIP-T32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		150 ns		YES
X28C512TM-20	Renesas Electronics	EEPROM	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	EEPROMs	.5 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		200 ns		YES
X28C512TMB-12	Renesas Electronics	EEPROM	MILITARY	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	EEPROMs	.5 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		120 ns		YES
X28C512RMB-15	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDSO-G32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		150 ns		YES
X28C512PMB-25	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDIP-T32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		250 ns		YES
X28C512PMB-15	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDIP-T32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		150 ns		YES
X28C512PM-90	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	2.54 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-PDIP-T32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C512EMB-90	Renesas Electronics	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL		50 mA	65536 words		5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		QUAD	R-XQCC-N32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C512RM-25	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words		5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs	1.27 mm	125 Cel		64KX8	64K	-55 Cel	NO		DUAL	R-XDSO-G32				100000 Write/Erase Cycles			Not Qualified	10 ms	524288 bit			128				.0005 Amp		250 ns		YES
X28C010KM-20	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	131072 words		5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs	2.54 mm	125 Cel		128KX8	128K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36							Not Qualified		1048576 bit			256				.0005 Amp		200 ns		YES
X28C010FMB-12C7729	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5			8	FLATPACK			1.27 mm	125 Cel		128KX8	128K	-55 Cel			DUAL	R-CDFP-F32		5.5 V	3.05 mm			10.93 mm		10 ms	1048576 bit	4.5 V	LG_MAX						21.08 mm	120 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.