32 EPROM 1,425

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

M27V101-150L1TR

STMicroelectronics

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

30 mA

131072 words

COMMON

3.3

3.3

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

Not Qualified

1048576 bit

e0

.00002 Amp

150 ns

M27V401-150F1

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

524288 words

COMMON

3.3

3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

3.6 V

5.97 mm

15.24 mm

Not Qualified

4194304 bit

3 V

e0

.00002 Amp

41.885 mm

150 ns

M27V101-150F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

131072 words

COMMON

3.3

3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T32

3.6 V

5.97 mm

15.24 mm

Not Qualified

1048576 bit

3 V

e0

.00002 Amp

41.885 mm

150 ns

5962-8961403MYX

STMicroelectronics

UVPROM

MILITARY

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

131072 words

5

8

CHIP CARRIER, WINDOW

1.27 mm

125 Cel

128KX8

128K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.92 mm

11.4 mm

Not Qualified

1048576 bit

4.5 V

e0

13.95 mm

200 ns

M27V101L

STMicroelectronics

UVPROM

INDUSTRIAL

32

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

131072 words

8

CHIP CARRIER

85 Cel

128KX8

128K

-40 Cel

QUAD

S-CQCC-N32

5.5 V

Not Qualified

1048576 bit

3 V

200 ns

M27V801-120F1TR

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

IN-LINE, WINDOW

2.54 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-GDIP-T32

3.6 V

5.72 mm

15.24 mm

Not Qualified

8388608 bit

3 V

41.885 mm

120 ns

M27V801-200F6TR

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

IN-LINE, WINDOW

2.54 mm

85 Cel

1MX8

1M

-40 Cel

DUAL

R-GDIP-T32

3.6 V

5.72 mm

15.24 mm

Not Qualified

8388608 bit

3 V

41.885 mm

200 ns

M27V401-120F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

524288 words

COMMON

3.3

3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T32

3.6 V

5.97 mm

15.24 mm

Not Qualified

4194304 bit

3 V

e0

.00002 Amp

41.885 mm

120 ns

M27V801-150F1TR

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

IN-LINE, WINDOW

2.54 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-GDIP-T32

3.6 V

5.72 mm

15.24 mm

Not Qualified

8388608 bit

3 V

41.885 mm

150 ns

M27W401-150F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

524288 words

COMMON

3

3/3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

DUAL

R-CDIP-T32

3.6 V

5.72 mm

15.24 mm

Not Qualified

4194304 bit

2.7 V

40

245

.000015 Amp

41.885 mm

150 ns

M27W801-120F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

1048576 words

COMMON

3

3/3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

1MX8

1M

-40 Cel

MATTE TIN

DUAL

R-CDIP-T32

3.6 V

5.72 mm

15.24 mm

Not Qualified

8388608 bit

2.7 V

e3

.000015 Amp

41.885 mm

120 ns

M27V801-200F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

1048576 words

COMMON

3.3

3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

1MX8

1M

-40 Cel

TIN LEAD

DUAL

R-GDIP-T32

3.63 V

5.72 mm

15.24 mm

Not Qualified

8388608 bit

2.97 V

e0

.00002 Amp

41.885 mm

200 ns

5962-8606306YC

STMicroelectronics

UVPROM

MILITARY

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

65 mA

32768 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

Gold (Au)

QUAD

R-CQCC-N32

5.5 V

3.556 mm

11.43 mm

Not Qualified

262144 bit

4.5 V

e4

.0003 Amp

13.97 mm

120 ns

12.5

M27V201-180L6

STMicroelectronics

INDUSTRIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

30 mA

262144 words

COMMON

3.3/5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

Not Qualified

2097152 bit

e0

.00002 Amp

180 ns

M27V201-120L1

STMicroelectronics

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

30 mA

262144 words

COMMON

3.3/5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

Not Qualified

2097152 bit

e0

.00002 Amp

120 ns

M27V401-120F6TR

STMicroelectronics

UVPROM

INDUSTRIAL

32

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

IN-LINE

2.54 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-GDIP-T32

3.6 V

5.97 mm

15.24 mm

Not Qualified

4194304 bit

3 V

41.885 mm

120 ns

M27V401L

STMicroelectronics

UVPROM

INDUSTRIAL

32

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

524288 words

8

CHIP CARRIER

85 Cel

512KX8

512K

-40 Cel

QUAD

S-CQCC-N32

5.5 V

Not Qualified

4194304 bit

3 V

200 ns

M27V801-150F6TR

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

IN-LINE, WINDOW

2.54 mm

85 Cel

1MX8

1M

-40 Cel

DUAL

R-GDIP-T32

3.6 V

5.72 mm

15.24 mm

Not Qualified

8388608 bit

3 V

41.885 mm

150 ns

M27V101-200L6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

3.3

3.3/5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

QUAD

R-CQCC-N32

3.63 V

2.28 mm

11.43 mm

Not Qualified

1048576 bit

2.97 V

e0

.00002 Amp

13.97 mm

200 ns

5962-8606310YX

STMicroelectronics

UVPROM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

130 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

QUAD

R-XQCC-N32

Not Qualified

262144 bit

.045 Amp

45 ns

12.5

M27V401-180L1TR

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

524288 words

5

8

CHIP CARRIER, WINDOW

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

4194304 bit

3 V

13.97 mm

180 ns

5962-8961406MXA

STMicroelectronics

UVPROM

MILITARY

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

125 Cel

128KX8

128K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

5.588 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

42.1005 mm

120 ns

WS57C71C-55CMB

STMicroelectronics

UVPROM

MILITARY

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

133 mA

32768 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

3.3 mm

11.43 mm

Not Qualified

262144 bit

4.5 V

e0

.025 Amp

13.97 mm

55 ns

M27V201-150L1

STMicroelectronics

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

30 mA

262144 words

COMMON

3.3/5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

Not Qualified

2097152 bit

e0

.00002 Amp

150 ns

5962-8606309YA

STMicroelectronics

UVPROM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

32768 words

5

8

CHIP CARRIER

125 Cel

32KX8

32K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

Not Qualified

262144 bit

4.5 V

e0

55 ns

M27V401-120L1

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

3.3/5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

4194304 bit

3 V

e0

.00002 Amp

13.97 mm

120 ns

WS27C010L-12DMB

STMicroelectronics

UVPROM

MILITARY

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

125 Cel

3-STATE

128KX8

128K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

5.72 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

.0001 Amp

42.295 mm

120 ns

M27V401-120L6TR

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

524288 words

5

8

CHIP CARRIER, WINDOW

1.27 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

4194304 bit

3 V

13.97 mm

120 ns

M27V401-180L6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

3.3/5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

4194304 bit

3 V

e0

.00002 Amp

13.97 mm

180 ns

M27V401-250L1TR

STMicroelectronics

UVPROM

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

50 mA

524288 words

COMMON

3.3/5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

QUAD

R-XQCC-N32

Not Qualified

4194304 bit

.00002 Amp

250 ns

M27W401-100F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

524288 words

COMMON

3

3/3.3

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T32

3.6 V

5.72 mm

15.24 mm

Not Qualified

4194304 bit

2.7 V

e3

.000015 Amp

41.885 mm

100 ns

M27V101-100L6TR

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

3.3

3.3

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

QUAD

R-CQCC-N32

3.63 V

2.28 mm

11.43 mm

Not Qualified

1048576 bit

2.97 V

e0

.00002 Amp

13.97 mm

100 ns

M27V801-200F1

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

1048576 words

COMMON

3.3

3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

3.63 V

5.72 mm

15.24 mm

Not Qualified

8388608 bit

2.97 V

e0

.00002 Amp

41.885 mm

200 ns

M27V401-150L1TR

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

524288 words

5

8

CHIP CARRIER, WINDOW

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

4194304 bit

3 V

13.97 mm

150 ns

M27V201-180L1

STMicroelectronics

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

30 mA

262144 words

COMMON

3.3/5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

Not Qualified

2097152 bit

e0

.00002 Amp

180 ns

WS57C51C-55L

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCJ

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

123 mA

16384 words

5

5

8

CHIP CARRIER, WINDOW

LDCC32,.5X.6

EPROMs

1.27 mm

70 Cel

3-STATE

16KX8

16K

0 Cel

TIN LEAD

QUAD

R-CQCC-J32

5.5 V

4.06 mm

11.24 mm

Not Qualified

131072 bit

4.5 V

e0

13.945 mm

55 ns

M27V801-120F1

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

1048576 words

COMMON

3.3

3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

3.63 V

5.72 mm

15.24 mm

Not Qualified

8388608 bit

2.97 V

e0

.00002 Amp

41.885 mm

120 ns

M27W401-150F4

STMicroelectronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

524288 words

COMMON

3/5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

-20 Cel

TIN LEAD

DUAL

R-XDIP-T32

Not Qualified

4194304 bit

e0

.00002 Amp

150 ns

M27V101-200F1TR

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

3.3

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

DUAL

R-GDIP-T32

3.6 V

5.97 mm

15.24 mm

Not Qualified

1048576 bit

3 V

41.885 mm

200 ns

M27W401-150F1

STMicroelectronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

524288 words

COMMON

3/5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-XDIP-T32

Not Qualified

4194304 bit

e0

.00002 Amp

150 ns

5962-8961403MXX

STMicroelectronics

UVPROM

MILITARY

32

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

125 Cel

128KX8

128K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

Not Qualified

1048576 bit

4.5 V

e0

200 ns

M27W201-120F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

262144 words

COMMON

3

3/3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T32

3.6 V

5.97 mm

15.24 mm

Not Qualified

2097152 bit

2.7 V

e3

.000015 Amp

41.885 mm

100 ns

M27V401-200L1

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

3.3/5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

4194304 bit

3 V

e0

.00002 Amp

13.97 mm

200 ns

M27W201-150F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

262144 words

COMMON

3

3/3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T32

3.6 V

5.97 mm

15.24 mm

Not Qualified

2097152 bit

2.7 V

e3

.000015 Amp

41.885 mm

100 ns

M27V401-200F1TR

STMicroelectronics

UVPROM

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

IN-LINE

2.54 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-GDIP-T32

3.6 V

5.97 mm

15.24 mm

Not Qualified

4194304 bit

3 V

41.885 mm

200 ns

M27V101-200L1

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

3.3

3.3/5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

QUAD

R-CQCC-N32

3.63 V

2.28 mm

11.43 mm

Not Qualified

1048576 bit

2.97 V

e0

.00002 Amp

13.97 mm

200 ns

5962-8961403MYC

STMicroelectronics

UVPROM

MILITARY

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

131072 words

5

8

CHIP CARRIER, WINDOW

1.27 mm

125 Cel

128KX8

128K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.92 mm

11.4 mm

Not Qualified

1048576 bit

4.5 V

e0

13.95 mm

200 ns

M27W401-200F1

STMicroelectronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

524288 words

COMMON

3/5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-XDIP-T32

Not Qualified

4194304 bit

e0

.00002 Amp

200 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.