DIP EPROM 537

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
EPC1441PI8	Intel	CONFIGURATION MEMORY		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	440800X1	440800	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.00006 Amp	9.398 mm		3.3
M27C1001-10F1L	STMicroelectronics		COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE			30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T32					Not Qualified	1048576 bit			e0			.0001 Amp		100 ns
EPC1PI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	3.3/5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	1046496X1	1046496	-40 Cel	MATTE TIN	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	9.398 mm		3.3
AM27C512-120DC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				70 Cel		64KX8	64K	0 Cel		DUAL	R-CDIP-T28		5.5 V				524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			120 ns
NTE2732A	Nte Electronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	NMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-XDIP-T24		5.25 V			Not Qualified	32768 bit	4.75 V		e0					200 ns	21
AM27C512-255DC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				70 Cel		64KX8	64K	0 Cel		DUAL	R-CDIP-T28		5.25 V				524288 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED			250 ns
2708	Intel	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		-5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE				70 Cel		1KX8	1K	0 Cel		DUAL	R-PDIP-T24		5.25 V			Not Qualified	8192 bit	4.75 V	IT ALSO REQUIRES 12V VDD SUPPLY						450 ns
M2732A-2F1	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V	21V PROGRAMMING VOLTAGE	e0				31.75 mm	200 ns	21
NTE2716	Nte Electronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	NMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel		DUAL	R-XDIP-T24		5.25 V			Not Qualified	16384 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED			350 ns	25
AM27C256-120DI	Rochester Electronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-CDIP-T28		5.5 V	5.588 mm	15.24 mm		262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		37.1475 mm	120 ns
D27128A	Rochester Electronics	UVPROM		28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE			2.54 mm			16KX8	16K		TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	15.24 mm		131072 bit	4.5 V		e0				37.084 mm	200 ns
D27128A-1	Intel		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE			100 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	131072 bit			e0					150 ns	12.5
D27128A25	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE			100 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	131072 bit			e0					250 ns	12.5
NMC27C64Q25	National Semiconductor	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0					250 ns	12.5
NTE2708	Nte Electronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	NMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	1KX8	1K	0 Cel	TIN LEAD	DUAL	R-XDIP-T24		5.25 V			Not Qualified	8192 bit	4.75 V		e0					450 ns
AM27C512-70DC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				70 Cel		64KX8	64K	0 Cel		DUAL	R-CDIP-T28		5.5 V				524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			70 ns
AM27C64-90DC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				70 Cel		8KX8	8K	0 Cel		DUAL	R-CDIP-T28		5.5 V				65536 bit	4.5 V							90 ns
D27C64-25	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE			20 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0			.0001 Amp		250 ns	12.5
NTE27C64-15D	Nte Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel		8KX8	8K	0 Cel		DUAL	R-PDIP-T28		5.5 V	5.72 mm	15.24 mm		65536 bit	4.5 V	LG-MAX; IT ALSO OPERATES AT 6 V NOMINAL SUPPLY VOLTAGE PROGRAMMING MODE					37.34 mm	150 ns
AM27C010-90DC	Rochester Electronics	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K	0 Cel		DUAL	R-CDIP-T32		5.5 V	5.588 mm	15.24 mm		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		42.1005 mm	90 ns
AM27C010-90DCB	Rochester Electronics	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL	R-CDIP-T32		5.5 V	5.588 mm	15.24 mm		1048576 bit	4.5 V		e0				42.1005 mm	90 ns
UPD27C512D-15	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE			30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	524288 bit			e0					150 ns
AM27C020-70DC	Spansion	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words				8	IN-LINE			2.54 mm	70 Cel		256KX8	256K	0 Cel		DUAL	R-CDIP-T32			5.58 mm	15.24 mm		2097152 bit							42.1 mm	70 ns
AM27C256-120DC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-CDIP-T28		5.5 V	5.588 mm	15.24 mm		262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		37.1475 mm	120 ns
CY7C243-25WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V			Not Qualified	32768 bit	4.5 V		e0					25 ns
D27128A20	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE			100 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	131072 bit			e0					200 ns	12.5
LD27128A2	Intel	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE			100 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28						131072 bit			e0					200 ns	12.5
MD27C64-20	Rochester Electronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5		8	IN-LINE	DIP28,.6			70 Cel	3-STATE	8KX8	8K	0 Cel		DUAL	R-XDIP-T28		5.5 V				65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00014 Amp		200 ns	12.5
MD27C64-35	Rochester Electronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5		8	IN-LINE	DIP28,.6			70 Cel	3-STATE	8KX8	8K	0 Cel		DUAL	R-XDIP-T28		5.5 V				65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00014 Amp		350 ns	12.5
MD27C6420	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V		e0			.00014 Amp		200 ns	12.5
MD27C6435	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V		e0			.00014 Amp		350 ns	12.5
AM2732A-3DC	Advanced Micro Devices		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE				4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	32768 bit			e0					300 ns	21
AM27C512-150DC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				70 Cel		64KX8	64K	0 Cel		DUAL	R-CDIP-T28		5.5 V				524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			150 ns
CY7C251-45WMB	Cypress Semiconductor	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words		5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V	POWER SWITCHED PROM	e0			.035 Amp	37.0205 mm	45 ns
EPC1441PC8	Intel	CONFIGURATION MEMORY		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	440800X1	440800	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.00006 Amp	9.398 mm		3.3
D2716-1	Intel	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE			100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	16384 bit			e0					350 ns	25
MD27512-20	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B		THROUGH-HOLE			150 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	524288 bit			e0					200 ns
TMM27128AD-20	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	131072 bit			e0					200 ns	12.5
CY27C256-55WC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V		e0					55 ns
EPC1PI8	Intel	CONFIGURATION MEMORY		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	1046496X1	1046496	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	9.398 mm		3.3
CY7C245-45WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	SYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V		e0			.09 Amp		70 ns	13.5
CY7C251-55WMB	Cypress Semiconductor	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words		5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V	POWER SWITCHED PROM	e0			.035 Amp	37.0205 mm	55 ns
D2764A-4	Intel	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE			75 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0					450 ns	12.5
D27C040-150V10	Intel	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE			50 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T32					Not Qualified	4194304 bit			e0			.0001 Amp		150 ns
D27C400-150V10	Intel	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE			50 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40(UNSPEC)	EPROMs		70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40					Not Qualified	4194304 bit			e0			.0001 Amp		150 ns
TMM2732D	Toshiba		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE				4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	32768 bit			e0					350 ns	25
AT27C128-12DC	Atmel	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T28		5.5 V			Not Qualified	131072 bit	4.5 V		e0			.0001 Amp		120 ns	12.5
CY27C256-150WI	Cypress Semiconductor	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V							150 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.