DIP EPROM 537

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
TMS27C512-20JE	Texas Instruments	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-CDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	200 ns
TMS2532-50JL	Texas Instruments		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	COMMON			8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel		DUAL	R-XDIP-T24				Not Qualified	32768 bit								500 ns
TMS27C128-25JE	Texas Instruments	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	250 ns	13
TMS27128-25JL	Texas Instruments		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel		DUAL	R-XDIP-T28				Not Qualified	131072 bit								250 ns	21
TMS27C512-12JL	Texas Instruments	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-CDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	120 ns
TMS27C128-20JE4	Texas Instruments	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	200 ns	13
TMS2532-35JL	Texas Instruments	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	COMMON			8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel		DUAL	R-XDIP-T24				Not Qualified	32768 bit								350 ns
TMS2764-30JL	Texas Instruments		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		DUAL	R-XDIP-T28				Not Qualified	65536 bit								300 ns	21
TMS27128-30JL	Texas Instruments		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel		DUAL	R-XDIP-T28				Not Qualified	131072 bit								300 ns	21
TMS27C512-45JL	Texas Instruments	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-XDIP-T28				Not Qualified	524288 bit								450 ns
TMS27C128-20JL4	Texas Instruments	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel		DUAL	R-GDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	200 ns	13
TMS27C128-25JE4	Texas Instruments	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	250 ns	13
TMS27C256JL-12	Texas Instruments	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-GDIP-T28	5.25 V	4.907 mm	15.24 mm	Not Qualified	262144 bit	4.75 V							120 ns
TMS27C256-1JP4	Texas Instruments	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-XDIP-T28					262144 bit								170 ns	12.5
TMS2532A-35JL	Texas Instruments		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	COMMON			8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel		DUAL	R-XDIP-T24				Not Qualified	32768 bit				NOT SPECIFIED	NOT SPECIFIED			350 ns
TMS2532-35JDL	Texas Instruments		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	COMMON			8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel		DUAL	R-XDIP-T24				Not Qualified	32768 bit								350 ns
TMS27C128-15JE4	Texas Instruments	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	150 ns	13
TMS27C256JL-2	Texas Instruments	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-GDIP-T28	5.25 V	4.907 mm	15.24 mm	Not Qualified	262144 bit	4.75 V							250 ns
TMS2532-30JDL	Texas Instruments		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	COMMON			8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel		DUAL	R-XDIP-T24				Not Qualified	32768 bit								300 ns
TMS27C128-15JE	Texas Instruments	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	150 ns	13
5962-8606310UA	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0			.045 Amp		45 ns	12.5
TTV27C256N-90C-25	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-XDIP-T28				Not Qualified	262144 bit						.0001 Amp		90 ns	12.75
M27W801-150F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	IN-LINE			2.54 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V						41.885 mm	120 ns
M87C257-90F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e3			.0001 Amp		90 ns
WS57LV291C-70T	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	COMMON	3.3	5	8	IN-LINE	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24	3.6 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	3 V		e0			.025 Amp	32.005 mm	70 ns	12.75
5962-9065801LA	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0			.035 Amp		70 ns
TTV27C256N-20C-12	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.26 mm		262144 bit	4.75 V					.0001 Amp	36.92 mm	200 ns	12.75
5962-8606310XX	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0					45 ns
M87C257-60XF7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28			15.24 mm	Not Qualified	262144 bit		LG-MAX	e3			.0001 Amp	38.1 mm	60 ns
M2716-1F1	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.715 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	25V PROGRAMMING VOLTAGE	e0				31.75 mm	350 ns	25
5962-9065804JX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				125 Cel		4KX8	4K	-55 Cel		DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V							35 ns
TS27C256-15VQ	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0					150 ns	12.5
5962-9065802JX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0					55 ns
TS27C256-25VQ	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0					250 ns	12.5
TTV27C256N-15C-10	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.26 mm		262144 bit	4.75 V					.0001 Amp	36.92 mm	150 ns	12.75
TTV27C256N-70C-24	STMicroelectronics	UVPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.26 mm		262144 bit	4.75 V					.0001 Amp	36.92 mm	70 ns	12.75
M27V512-120F1	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	65536 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-CDIP-T28	3.6 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	3 V		e0			.00001 Amp		120 ns
M87C257-70XF7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28			15.24 mm	Not Qualified	262144 bit		LG-MAX	e3			.0001 Amp	38.1 mm	70 ns
TTV27C256N-20C-8	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V					.0001 Amp	36.92 mm	200 ns	12.75
TTV27C256N-20C-15	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.26 mm		262144 bit	4.75 V					.0001 Amp	36.92 mm	200 ns	12.75
5962-8765001JA	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	16384 bit	4.5 V		e0			.12 Amp		50 ns	13.5
M27W402-200F4	STMicroelectronics		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			50 mA	262144 words	COMMON		3/5	16	IN-LINE	DIP40,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	4194304 bit			e0			.00002 Amp		200 ns
5962-8606309UX	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0					55 ns
5962-9065803JA	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0			.035 Amp		45 ns
M27V512-200F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	65536 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-CDIP-T28	3.6 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	3 V		e0			.00001 Amp		200 ns
TS27C256-30VQ	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0					300 ns	12.5
5962-8606305UC	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0					150 ns
WS57C64F-70DI	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			92 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit			e0			.0005 Amp		70 ns	13.5

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.