DIP EPROM 537

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
TS27C256-25XCQ	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0			250 ns	12.5
ETC2732Q-45	STMicroelectronics		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel		DUAL	R-XDIP-T24				Not Qualified	32768 bit				.0001 Amp		450 ns
M27V512-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	65536 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-CDIP-T28	3.6 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	3 V		e0	.00001 Amp		100 ns
M27W801-120F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	IN-LINE				2.54 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				41.885 mm	120 ns
TTV27C256N-15C-11	STMicroelectronics	UVPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.26 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	150 ns	12.75
M27V400-100XF6	STMicroelectronics	UVPROM	INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.465 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	3.135 V		e0	.00002 Amp	52.285 mm	100 ns
M27V800-150F6	STMicroelectronics		INDUSTRIAL	42	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	1048576 words	COMMON		3/3.3	8	IN-LINE	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T42				Not Qualified	8388608 bit			e0	.000015 Amp		150 ns
M27V512-150F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	65536 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-CDIP-T28	3.6 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	3 V		e0	.00001 Amp		150 ns
TTV27C256N-20C-3	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	200 ns	12.75
TTV27C256N-70C-20	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	70 ns	12.75
TTV27C256N-90C-22	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	90 ns	12.75
M87C257-12F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e3	.0001 Amp		120 ns
M27V401-150F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	IN-LINE				2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	3 V				41.885 mm	150 ns
5962-9065803JX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE					125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0			45 ns
TTV27C256N-15C-6	STMicroelectronics	UVPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	150 ns	12.75
M87C257-60F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e3	.0001 Amp		60 ns
5962-8606305UA	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0	.0003 Amp		150 ns	12.5
TTV27C256N-12C-24	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.26 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	120 ns	12.75
M27V512-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	65536 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-CDIP-T28	3.6 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	3 V		e0	.00001 Amp		120 ns
5962-9065804JA	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0	.035 Amp		35 ns
TS27C256-20XCQ	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0			200 ns	12.5
TS27C256-17VQ	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0			170 ns	12.5
M2764A-15XF1	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			75 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit			e0			150 ns	12.5
M27W401-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	3/3.3	8	IN-LINE	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.7 V	ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V	e3	.000015 Amp	41.885 mm	80 ns
ETC2716Q-5	STMicroelectronics		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel		DUAL	R-XDIP-T24				Not Qualified	16384 bit				.0001 Amp		550 ns
TS27C64A-15CQ	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit			e0			150 ns	12.5
TS27C256-17XCQ	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0			170 ns	12.5
WS57LV291C-90T	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	COMMON	3.3	5	8	IN-LINE	DIP24,.3		EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24	3.6 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	3 V		e0	.025 Amp	32.005 mm	90 ns	12.75
M27V401-200F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	IN-LINE				2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	3 V				41.885 mm	200 ns
TTV27C256N-70C-26	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-XDIP-T28				Not Qualified	262144 bit				.0001 Amp		70 ns	12.75
M27C4002-10XF1TR	STMicroelectronics	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE				2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V				52.195 mm	100 ns
M27C4002-90XF1TR	STMicroelectronics	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE				2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V				52.195 mm	90 ns
M27C1000-80XF1	STMicroelectronics		COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T32				Not Qualified	1048576 bit			e0	.0001 Amp		80 ns
M2732A-3F6	STMicroelectronics	UVPROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V		e0		31.75 mm	300 ns	21
M27C128-12F6	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit			e0	.0001 Amp		120 ns	12.75
M27C256B-25XF7	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0	.0001 Amp		250 ns	12.75
M27C4002-90XF6TR	STMicroelectronics	UVPROM	INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE				2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V				52.195 mm	90 ns
M27C1024-25F6	STMicroelectronics		INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	1048576 bit			e0	.0001 Amp		250 ns
M27C128-15F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	131072 bit			e0	.0001 Amp		150 ns	12.75
M27C4002-12XF6TR	STMicroelectronics	UVPROM	INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE				2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V				52.195 mm	120 ns
M27C256B-80XF7	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0	.0001 Amp		80 ns	12.75
M27C4002-80F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE				2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V				52.195 mm	80 ns
M27C4002-12F1TR	STMicroelectronics	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE				2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V				52.195 mm	120 ns
M27C4002-90F1TR	STMicroelectronics	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE				2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V				52.195 mm	90 ns
M27C256B-15XF7	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0	.0001 Amp		150 ns	12.75
M2732A-3F1	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V	21V PROGRAMMING VOLTAGE	e0		31.75 mm	300 ns	21
M27C512-12XF7	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	64KX8	64K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	524288 bit			e0	.0002 Amp		120 ns
M27C1024-25F3	STMicroelectronics		AUTOMOTIVE	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	1048576 bit			e0	.0001 Amp		200 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.