DIP EPROM 537

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M87C257-12XF7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28			15.24 mm	Not Qualified	262144 bit		LG-MAX	e3	.0001 Amp	38.1 mm	120 ns
M27W402-150F1	STMicroelectronics		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			50 mA	262144 words	COMMON		3/5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	4194304 bit			e0	.00002 Amp		150 ns
M27W401-200F4	STMicroelectronics		COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	524288 words	COMMON		3/5	8	IN-LINE	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-XDIP-T32				Not Qualified	4194304 bit			e0	.00002 Amp		200 ns
M87C257-80XF7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28			15.24 mm	Not Qualified	262144 bit		LG-MAX	e3	.0001 Amp	38.1 mm	80 ns
5962-9065801LX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE					125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0			70 ns
M27W801-200F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	IN-LINE				2.54 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				41.885 mm	120 ns
TTV27C256N-12C-18	STMicroelectronics	UVPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	120 ns	12.75
M2716-1F6	STMicroelectronics	UVPROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.715 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	25V PROGRAMMING VOLTAGE	e0		31.75 mm	350 ns	25
M87C257-10XF7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28			15.24 mm	Not Qualified	262144 bit		LG-MAX	e3	.0001 Amp	38.1 mm	100 ns
5962-8961405MXX	STMicroelectronics	UVPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE					125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V			Not Qualified	1048576 bit	4.5 V		e0			150 ns
M87C257-70F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e3	.0001 Amp		70 ns
WS57C64F-70D	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			82 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit			e0	.0005 Amp		70 ns	13.5
5962-8606309XX	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T28	5.5 V	5.8928 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			55 ns
M27V401-180F1TR	STMicroelectronics	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	IN-LINE				2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	3 V				41.885 mm	180 ns
M2716F6	STMicroelectronics	UVPROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.25 V	5.715 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	25V PROGRAMMING VOLTAGE	e0		31.75 mm	450 ns	25
M27V512-100F1	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	65536 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-CDIP-T28	3.6 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	3 V		e0	.00001 Amp		100 ns
TTV27C256N-70C-23	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.26 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	70 ns	12.75
TS27C256-20CQ	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0			200 ns	12.5
5962-8606305UB	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE					125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0			150 ns
M27W801-100F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	IN-LINE				2.54 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				41.885 mm	100 ns
M27V400-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.6 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	3 V		e0	.00002 Amp	52.285 mm	100 ns
TS27C64A-15XCQ	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit			e0			150 ns	12.5
M27V400-100XF1	STMicroelectronics	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.465 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	3.135 V		e0	.00002 Amp	52.285 mm	100 ns
TTV27C256N-20C-14	STMicroelectronics	UVPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.26 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	200 ns	12.75
TTV27C256N-70C-16	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	70 ns	12.75
M27V400-100F1	STMicroelectronics	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.6 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	3 V		e0	.00002 Amp	52.285 mm	100 ns
TTV27C256N-20C-11	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-XDIP-T28				Not Qualified	262144 bit				.0001 Amp		200 ns	12.75
TS27C256-25CQ	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0			250 ns	12.5
M87C257-15XF7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28			15.24 mm	Not Qualified	262144 bit		LG-MAX	e3	.0001 Amp	38.1 mm	150 ns
M87C257-80F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e3	.0001 Amp		80 ns
M27128A1F1	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	131072 bit			e0			150 ns	12.5
ETC2732Q-35	STMicroelectronics		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel		DUAL	R-XDIP-T24				Not Qualified	32768 bit				.0001 Amp		350 ns
5962-9065801JA	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0	.035 Amp		70 ns
TTV27C256N-90C-18	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	90 ns	12.75
M87C257-45F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28			15.24 mm	Not Qualified	262144 bit		LG-MAX	e3	.0001 Amp	38.1 mm	45 ns
TTV27C256N-12C-23	STMicroelectronics	UVPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.26 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	120 ns	12.75
5962-8752902LX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		2048 words		5		8	IN-LINE					125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24	5.5 V			Not Qualified	16384 bit	4.5 V
5962-8606310UX	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE					125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0			45 ns
5962-8765001JX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE					125 Cel		2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	16384 bit	4.5 V		e0			50 ns
TTV27C256N-12C-15	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	120 ns	12.75
M27V401-180F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	IN-LINE				2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	3 V				41.885 mm	180 ns
M27W402-200F1	STMicroelectronics		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			50 mA	262144 words	COMMON		3/5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	4194304 bit			e0	.00002 Amp		200 ns
5962-8606305UX	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE					125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0			150 ns
M27V401-150F1TR	STMicroelectronics	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	IN-LINE				2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	3 V				41.885 mm	150 ns
TTV27C256N-70C-18	STMicroelectronics	UVPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	70 ns	12.75
M27V512-90F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	65536 words	COMMON		3.3/5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	524288 bit			e0	.00001 Amp		90 ns
M87C257-15F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e3	.0001 Amp		150 ns
TS27C256-20VQ	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0			200 ns	12.5

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.