DIP EPROM 537

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

CY7C287-45WC

Cypress Semiconductor

UVPROM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

SYNCHRONOUS

120 mA

65536 words

COMMON

5

5

8

IN-LINE

DIP28,.3

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

Not Qualified

524288 bit

4.5 V

PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE

e0

15 ns

D2732A-2

Rochester Electronics

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

100 mA

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

32768 bit

e0

200 ns

21

D2764A

Rochester Electronics

UVPROM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

75 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

250 ns

12.5

D27C256

Rochester Electronics

UVPROM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

.0001 Amp

250 ns

12.75

EPC1PC8

Intel

CONFIGURATION MEMORY

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

50 mA

1046496 words

3.3

5

1

IN-LINE

DIP8,.3

OTP ROMs

2.54 mm

70 Cel

3-STATE

1046496X1

1046496

0 Cel

TIN LEAD

DUAL

R-PDIP-T8

1

3.6 V

4.318 mm

7.62 mm

Not Qualified

1046496 bit

3 V

IT ALSO REQUIRES 5V NOMINAL SUPPLY

e0

.0001 Amp

9.398 mm

3.3

MBM27C512-25Z

Fujitsu

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

65536 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

524288 bit

e0

.0001 Amp

250 ns

MCM2532C

Motorola

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

32768 bit

e0

450 ns

27C256-10I/P

Microchip Technology

EPROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

25 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

4.83 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

DATA RETENTION >200 YEARS

e0

.0001 Amp

36.32 mm

100 ns

5

5962-8766105XA

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

8

IN-LINE

125 Cel

3-STATE

16KX8

16K

-55 Cel

TIN LEAD

DUAL

R-CDIP-T28

5.5 V

Not Qualified

131072 bit

4.5 V

e0

200 ns

TMS87C257-150JL

Texas Instruments

UVPROM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.00025 Amp

150 ns

TMS87C257-2JL

Texas Instruments

UVPROM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.00025 Amp

200 ns

5962-01-357-9827

Texas Instruments

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

250 ns

13

TMS87C257-1JL

Texas Instruments

UVPROM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.00025 Amp

170 ns

SMJ27C256JM

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

25 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.0003 Amp

250 ns

12.5

TTV27C256N-12C-33

Texas Instruments

UVPROM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.00025 Amp

120 ns

13

SMJ27C256-150JM

Texas Instruments

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

25 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.0003 Amp

150 ns

12.5

5962-8764803XA

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

65536 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

64KX8

64K

-55 Cel

DUAL

R-GDIP-T28

5.5 V

Not Qualified

524288 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.000325 Amp

250 ns

5962-8606303XA

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

125 Cel

3-STATE

32KX8

32K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

Not Qualified

262144 bit

4.5 V

e0

300 ns

SMJ27C128-1JM

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

30 mA

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

16KX8

16K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

131072 bit

.00025 Amp

150 ns

13

SMJ27C256-1JM

Texas Instruments

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.00025 Amp

170 ns

13

SMJ2532-30JM

Texas Instruments

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

38535Q/M;38534H;883B

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

125 Cel

3-STATE

4KX8

4K

-55 Cel

DUAL

R-XDIP-T24

Not Qualified

32768 bit

NOT SPECIFIED

NOT SPECIFIED

300 ns

SMJ27C128-12JM

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

25 mA

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

16KX8

16K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

131072 bit

.0003 Amp

120 ns

12.5

5962-01-370-2009

Texas Instruments

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

120 ns

13

SMJ2532-35JM

Texas Instruments

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

38535Q/M;38534H;883B

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

125 Cel

3-STATE

4KX8

4K

-55 Cel

DUAL

R-XDIP-T24

Not Qualified

32768 bit

350 ns

SMJ27C128JM

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

25 mA

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

16KX8

16K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

131072 bit

.0003 Amp

250 ns

12.5

SMJ27C128-100JM

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

30 mA

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

16KX8

16K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

131072 bit

.00025 Amp

100 ns

13

SMJ27C256-2JM

Texas Instruments

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

25 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.0003 Amp

200 ns

12.5

5962-01-354-7978

Texas Instruments

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

200 ns

13

SMJ27C256-12JM

Texas Instruments

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.00025 Amp

120 ns

13

5962-8766106XA

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

8

IN-LINE

125 Cel

3-STATE

16KX8

16K

-55 Cel

TIN LEAD

DUAL

R-CDIP-T28

5.5 V

Not Qualified

131072 bit

4.5 V

e0

250 ns

SMJ27C256-10JM

Texas Instruments

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.00025 Amp

100 ns

13

5962-8766106XX

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

8

IN-LINE

125 Cel

16KX8

16K

-55 Cel

DUAL

R-CDIP-T28

5.5 V

Not Qualified

131072 bit

4.5 V

250 ns

5962-01-421-9043

Texas Instruments

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

150 ns

13

5962-8606301XA

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

125 Cel

3-STATE

32KX8

32K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

Not Qualified

262144 bit

4.5 V

e0

200 ns

TMS87C257JL

Texas Instruments

UVPROM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.00025 Amp

250 ns

5962-8764802XA

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

65536 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

64KX8

64K

-55 Cel

DUAL

R-GDIP-T28

5.5 V

Not Qualified

524288 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.000325 Amp

200 ns

SMJ27C256-120JM

Texas Instruments

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

25 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.0003 Amp

120 ns

12.5

5962-8764801XA

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

8

IN-LINE

125 Cel

64KX8

64K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

Not Qualified

524288 bit

4.5 V

e0

150 ns

SMJ27C512-15JM

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

64KX8

64K

-55 Cel

DUAL

R-CDIP-T28

5.5 V

5.16 mm

15.24 mm

Not Qualified

524288 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.000325 Amp

36.83 mm

150 ns

5962-8606303XX

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

Not Qualified

262144 bit

4.5 V

e0

.0003 Amp

300 ns

12.5

5962-8766104XA

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

8

IN-LINE

125 Cel

16KX8

16K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

Not Qualified

131072 bit

4.5 V

e0

170 ns

SMJ27C128-2JM

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

25 mA

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

16KX8

16K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

131072 bit

.0003 Amp

200 ns

12.5

5962-8606304XA

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

125 Cel

32KX8

32K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

Not Qualified

262144 bit

4.5 V

e0

170 ns

5962-8766107XX

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

8

IN-LINE

125 Cel

16KX8

16K

-55 Cel

DUAL

R-CDIP-T28

5.5 V

Not Qualified

131072 bit

4.5 V

300 ns

5962-9175205MXX

Texas Instruments

UVPROM

MILITARY

32

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

125 Cel

3-STATE

512KX8

512K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

7.493 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

.0001 Amp

120 ns

5962-8766107XA

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

8

IN-LINE

125 Cel

3-STATE

16KX8

16K

-55 Cel

TIN LEAD

DUAL

R-CDIP-T28

5.5 V

Not Qualified

131072 bit

4.5 V

e0

300 ns

5962-8606302XA

Texas Instruments

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

125 Cel

3-STATE

32KX8

32K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

Not Qualified

262144 bit

4.5 V

e0

250 ns

SMJ27C210-30J

Texas Instruments

MILITARY

40

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

65536 words

COMMON

5

5

16

IN-LINE

DIP40,.6

EPROMs

2.54 mm

125 Cel

3-STATE

64KX16

64K

-55 Cel

DUAL

R-XDIP-T40

Not Qualified

1048576 bit

300 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.