INDUSTRIAL EPROM 1,425

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

M27C1024-15F7X

STMicroelectronics

UVPROM

INDUSTRIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

65536 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

105 Cel

3-STATE

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T40

5.5 V

5.97 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e3

.0001 Amp

52.195 mm

100 ns

M27C256B-45F6X

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T28

5.5 V

5.97 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e3

.0001 Amp

36.92 mm

45 ns

12.75

M27C4001-70L6TR

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.8 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

e0

.0001 Amp

13.97 mm

70 ns

M27C1024-90XF7X

STMicroelectronics

UVPROM

INDUSTRIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

65536 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

105 Cel

3-STATE

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T40

5.25 V

5.97 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e3

.0001 Amp

52.195 mm

80 ns

M27C1001-20L6XTR

STMicroelectronics

INDUSTRIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

30 mA

131072 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

1048576 bit

e0

.0001 Amp

120 ns

M27C256B-90XF6

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T28

5.25 V

5.72 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

e3

.0001 Amp

36.92 mm

90 ns

12.75

M27C1024-90XF6

STMicroelectronics

UVPROM

INDUSTRIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

65536 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

85 Cel

3-STATE

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T40

5.25 V

5.97 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e3

.0001 Amp

52.195 mm

80 ns

M27C1024-60XF6

STMicroelectronics

INDUSTRIAL

40

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

35 mA

65536 words

COMMON

5

5

16

IN-LINE

DIP40,.6

EPROMs

2.54 mm

85 Cel

3-STATE

64KX16

64K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T40

Not Qualified

1048576 bit

e0

.0001 Amp

60 ns

M27C1024-90F7

STMicroelectronics

UVPROM

INDUSTRIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

65536 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

105 Cel

3-STATE

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T40

5.5 V

5.97 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e3

.0001 Amp

52.195 mm

80 ns

M27C256B-45XF6X

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T28

5.25 V

5.97 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

e3

.0001 Amp

36.92 mm

45 ns

12.75

M27C4002-10XJ6

STMicroelectronics

UVPROM

INDUSTRIAL

44

QCCJ

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

70 mA

262144 words

COMMON

5

5

16

CHIP CARRIER

LDCC44,.7SQ

EPROMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

-40 Cel

MATTE TIN

QUAD

S-CQCC-J44

5.25 V

4.83 mm

16.51 mm

Not Qualified

4194304 bit

4.75 V

e3

.0001 Amp

16.51 mm

100 ns

M27C4001-10XL6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.25 V

2.8 mm

11.43 mm

Not Qualified

4194304 bit

4.75 V

e0

.0001 Amp

13.97 mm

100 ns

M27C4002-90J6XTR

STMicroelectronics

INDUSTRIAL

44

QCCJ

SQUARE

CERAMIC

YES

CMOS

J BEND

70 mA

262144 words

COMMON

5

5

16

CHIP CARRIER

LDCC44,.7SQ

EPROMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

-40 Cel

Matte Tin (Sn)

QUAD

S-XQCC-J44

4194304 bit

e3

.0001 Amp

90 ns

M27C1001-60XL6XTR

STMicroelectronics

INDUSTRIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

30 mA

131072 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

1048576 bit

e0

.0001 Amp

60 ns

M27C4001-12L6X

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.8 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

e0

.0001 Amp

13.97 mm

100 ns

M27C4001-70F6X

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T32

5.5 V

5.97 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e3

.0001 Amp

41.885 mm

70 ns

M27C1024-15F6

STMicroelectronics

UVPROM

INDUSTRIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

65536 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

85 Cel

3-STATE

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T40

5.5 V

5.97 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e3

.0001 Amp

52.195 mm

100 ns

M27C160-70F6

STMicroelectronics

UVPROM

INDUSTRIAL

42

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

1048576 words

COMMON

5

5

16

IN-LINE

DIP42,.6

8

EPROMs

2.54 mm

85 Cel

3-STATE

1MX16

1M

-40 Cel

MATTE TIN

DUAL

R-CDIP-T42

5.5 V

5.71 mm

15.24 mm

Not Qualified

16777216 bit

4.5 V

e3

.0001 Amp

54.635 mm

70 ns

M27C4001-35L6X

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.8 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

e0

.0001 Amp

13.97 mm

35 ns

M27C2001-12XF6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

262144 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T32

5.25 V

5.72 mm

15.24 mm

Not Qualified

2097152 bit

4.75 V

e3

.0001 Amp

41.885 mm

120 ns

M27C2001-10F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T32

5.5 V

5.72 mm

15.24 mm

Not Qualified

2097152 bit

4.5 V

e3

.0001 Amp

41.885 mm

100 ns

M27C256B-15F7

STMicroelectronics

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

105 Cel

3-STATE

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

.0001 Amp

150 ns

12.75

M27C256B-12XF6X

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T28

5.25 V

5.97 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

e3

.0001 Amp

36.92 mm

120 ns

12.75

M27C1001-70XL6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

GOLD

QUAD

R-CQCC-N32

5.25 V

2.28 mm

11.43 mm

Not Qualified

1048576 bit

4.75 V

e4

.0001 Amp

13.97 mm

70 ns

M27C256B-15F7X

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE, WINDOW

2.54 mm

105 Cel

32KX8

32K

-40 Cel

DUAL

R-GDIP-T28

5.5 V

5.71 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

150 ns

M27C256B-70F7X

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE, WINDOW

2.54 mm

105 Cel

32KX8

32K

-40 Cel

DUAL

R-GDIP-T28

5.5 V

5.71 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

70 ns

M27C512-15XF6

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

TIN

DUAL

R-GDIP-T28

5.5 V

5.72 mm

15.24 mm

Not Qualified

524288 bit

4.75 V

e3

.0001 Amp

36.92 mm

150 ns

M27C2001-90F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T32

5.5 V

5.72 mm

15.24 mm

Not Qualified

2097152 bit

4.5 V

e3

.0001 Amp

41.885 mm

90 ns

M27C801-45F6TR

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

IN-LINE, WINDOW

2.54 mm

85 Cel

1MX8

1M

-40 Cel

TIN

DUAL

R-CDIP-T32

5.5 V

5.72 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

e3

41.885 mm

45 ns

M27C2001-15F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

262144 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T32

5.5 V

5.72 mm

15.24 mm

Not Qualified

2097152 bit

4.5 V

e3

.0001 Amp

41.885 mm

150 ns

M27C1001-80F6X

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T32

5.5 V

5.97 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e3

.0001 Amp

41.885 mm

80 ns

M27C2001-15L6TR

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

2097152 bit

4.5 V

e0

.0001 Amp

13.97 mm

150 ns

M27C1001-25L6TR

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

e0

.0001 Amp

13.97 mm

120 ns

M27C1024-15XF6X

STMicroelectronics

UVPROM

INDUSTRIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

65536 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

85 Cel

3-STATE

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T40

5.25 V

5.97 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e3

.0001 Amp

52.195 mm

100 ns

M27C256B-12XF7X

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE, WINDOW

2.54 mm

105 Cel

32KX8

32K

-40 Cel

DUAL

R-GDIP-T28

5.25 V

5.71 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

120 ns

M27C4002-15XJ6XTR

STMicroelectronics

INDUSTRIAL

44

QCCJ

SQUARE

CERAMIC

YES

CMOS

J BEND

70 mA

262144 words

COMMON

5

5

16

CHIP CARRIER

LDCC44,.7SQ

EPROMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

-40 Cel

Matte Tin (Sn)

QUAD

S-XQCC-J44

4194304 bit

e3

.0001 Amp

150 ns

M27C4002-45J6XTR

STMicroelectronics

INDUSTRIAL

44

QCCJ

SQUARE

CERAMIC

YES

CMOS

J BEND

70 mA

262144 words

COMMON

5

5

16

CHIP CARRIER

LDCC44,.7SQ

EPROMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

-40 Cel

Matte Tin (Sn)

QUAD

S-XQCC-J44

4194304 bit

e3

.0001 Amp

45 ns

M27C4001-15L6XTR

STMicroelectronics

INDUSTRIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

30 mA

524288 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

4194304 bit

e0

.0001 Amp

100 ns

M27C1024-10F7

STMicroelectronics

UVPROM

INDUSTRIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

65536 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

105 Cel

3-STATE

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T40

5.5 V

5.97 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e3

.0001 Amp

52.195 mm

100 ns

M27C1001-60XL6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

GOLD

QUAD

R-CQCC-N32

5.25 V

2.28 mm

11.43 mm

Not Qualified

1048576 bit

4.75 V

e4

.0001 Amp

13.97 mm

60 ns

M27C512-80XF6

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.72 mm

15.24 mm

Not Qualified

524288 bit

4.75 V

e0

.0001 Amp

36.92 mm

80 ns

M27C1001-35L6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

GOLD

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

e4

.0001 Amp

13.97 mm

35 ns

M27C1001-45XL6TR

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.25 V

2.28 mm

11.43 mm

Not Qualified

1048576 bit

4.75 V

e0

.0001 Amp

13.97 mm

45 ns

M27C4002-90XF6

STMicroelectronics

UVPROM

INDUSTRIAL

40

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

262144 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

85 Cel

3-STATE

256KX16

256K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T40

5.25 V

5.72 mm

15.24 mm

Not Qualified

4194304 bit

4.75 V

e3

.0001 Amp

52.195 mm

90 ns

M27C2001-12L6X

STMicroelectronics

UVPROM

INDUSTRIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

2097152 bit

4.5 V

e0

.0001 Amp

13.97 mm

120 ns

M27C4002-80XJ6TR

STMicroelectronics

UVPROM

INDUSTRIAL

44

QCCJ

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

70 mA

262144 words

COMMON

5

5

16

CHIP CARRIER

LDCC44,.7SQ

EPROMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

-40 Cel

MATTE TIN

QUAD

S-CQCC-J44

5.25 V

4.83 mm

16.51 mm

Not Qualified

4194304 bit

4.75 V

e3

.0001 Amp

16.51 mm

80 ns

M27C1024-55XF6

STMicroelectronics

UVPROM

INDUSTRIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

65536 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

85 Cel

3-STATE

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T40

5.25 V

5.97 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e3

.0001 Amp

52.195 mm

55 ns

M27C64A-10F6X

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

8KX8

8K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T28

5.5 V

5.97 mm

15.24 mm

Not Qualified

65536 bit

4.5 V

e3

.0001 Amp

36.92 mm

100 ns

12.5

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.