INDUSTRIAL EPROM 1,425

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27V101-200L6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3.3	3.3/5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	3.63 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	13.97 mm	200 ns
M27V800-150F6	STMicroelectronics		INDUSTRIAL	42	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	1048576 words	COMMON		3/3.3	8	IN-LINE	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T42				Not Qualified	8388608 bit			e0	.000015 Amp		150 ns
M27W101-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3		41.885 mm	100 ns
M27V512-150F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	65536 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-CDIP-T28	3.6 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	3 V		e0	.00001 Amp		150 ns
TTV27C256N-70C-21	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	70 ns	12.75
M27W101-100F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel	TIN	DUAL	R-GDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3		41.885 mm	100 ns
M27V101-120F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	3 V				41.885 mm	120 ns
TTV27C256N-70C-20	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	70 ns	12.75
TTV27C256N-90C-22	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	90 ns	12.75
M87C257-12F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e3	.0001 Amp		120 ns
M27W256-150F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28	3.6 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	2.7 V				36.92 mm	150 ns
M27V401-150F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	IN-LINE				2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	3 V				41.885 mm	150 ns
M27V401-150L6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	3.3/5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	4194304 bit	3 V		e0	.00002 Amp	13.97 mm	150 ns
M87C257-60F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e3	.0001 Amp		60 ns
M27W400-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words				8	IN-LINE, WINDOW		16		2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-GDIP-T40	3.96 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	2.43 V				52.195 mm	100 ns
M87C257-80XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		80 ns
TTV27C256N-12C-24	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.26 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	120 ns	12.75
M27256-20F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			200 ns	12.5
M27V256-100F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	3.6 V	5.72 mm	16 mm	Not Qualified	262144 bit	3 V				36.5 mm	100 ns
M27V512-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	65536 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-CDIP-T28	3.6 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	3 V		e0	.00001 Amp		120 ns
M27V256-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	3.6 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	3 V		e0	.00001 Amp	36.92 mm	120 ns	12.75
M87C257-12F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		120 ns
M2764A-20F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			200 ns	12.5
M87C257-45F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		45 ns
M27V401-150L6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	CHIP CARRIER, WINDOW				1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	4194304 bit	3 V				13.97 mm	150 ns
M27128A-3F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	131072 bit	4.75 V		e0			300 ns	12.5
TS27C256-17VQ	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0			170 ns	12.5
M27V201-250L6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words				8	CHIP CARRIER, WINDOW				1.27 mm	85 Cel		256KX8	256K	-40 Cel		QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	3 V				13.97 mm	250 ns
M27W512-200F6E	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	3.6 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	2.7 V		e3		36.92 mm	100 ns
M27W401-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	3/3.3	8	IN-LINE	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.7 V	ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V	e3	.000015 Amp	41.885 mm	80 ns
M27W101-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3	.000015 Amp	41.885 mm	80 ns
M27V102-90F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	52.195 mm	90 ns
M87C257-80XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp	36.92 mm	80 ns
M27W202-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3.3	3/3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	3.6 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	2.7 V		e3	.000015 Amp	52.195 mm	100 ns
M87C257-80XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		80 ns
M27V101-90L6TR	STMicroelectronics		INDUSTRIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	131072 words	COMMON	3.3	3.3	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32				Not Qualified	1048576 bit			e0	.00002 Amp		90 ns
M27512-2F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0			200 ns
M27V101-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	3 V		e0	.00002 Amp	41.885 mm	100 ns
M27W512-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3	3/3.3	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	DUAL	R-GDIP-T28	3.6 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	2.7 V	ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V	e3	.000015 Amp	36.92 mm	80 ns
WS57C71C-45CI	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6		OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e0	.025 Amp	13.97 mm	45 ns
M87C257-45F7X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		45 ns
M27V322-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	2.97 V		e3	.00006 Amp	54.635 mm	120 ns
M27512-20F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			200 ns
M27V401-200F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	IN-LINE				2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	3 V				41.885 mm	200 ns
M87C257-20F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		150 ns
TTV27C256N-70C-26	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-XDIP-T28				Not Qualified	262144 bit				.0001 Amp		70 ns	12.75
M27C4001-12XL6XTR	STMicroelectronics		INDUSTRIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					4194304 bit			e0	.0001 Amp		100 ns
M27C1024-80XF6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3	.0001 Amp	52.195 mm	80 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.