INDUSTRIAL EPROM 1,425

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M87C257-20XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		150 ns
M87C257-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp	36.92 mm	120 ns
TTV27C256N-90C-23	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	90 ns	12.75
M87C257-70F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e3	.0001 Amp		70 ns
M87C257-12XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp	36.92 mm	120 ns
M27W101-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3	.000015 Amp	41.885 mm	100 ns
TTV27C256N-12M-8	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	120 ns	12.75
M87C257-10XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		100 ns
TTV27C256N-15C-13	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28	5.25 V	5.72 mm	15.24 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	150 ns	12.75
M87C257-60XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		60 ns
M27V101-200F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	IN-LINE, WINDOW				2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	3 V				41.885 mm	200 ns
M87C257-20XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		150 ns
M87C257-10F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		100 ns
M87C257-45XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		45 ns
M27V401-200L6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	3.3/5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	4194304 bit	3 V		e0	.00002 Amp	13.97 mm	200 ns
M2716F6	STMicroelectronics	UVPROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.25 V	5.715 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	25V PROGRAMMING VOLTAGE	e0		31.75 mm	450 ns	25
M27V102-150F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	52.195 mm	150 ns
M27W256-100F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28	3.6 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	2.7 V				36.92 mm	100 ns
M27V101-150L6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3.3	3.3	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	3.63 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	13.97 mm	150 ns
M27W102-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3/3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	3.6 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3	.000015 Amp	52.195 mm	80 ns
M27V322-100XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	54.635 mm	100 ns
M27V201-120L6	STMicroelectronics		INDUSTRIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	262144 words	COMMON		3.3/5	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32				Not Qualified	2097152 bit			e0	.00002 Amp		120 ns
M87C257-60F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp	36.92 mm	60 ns
M27V801-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32	3.63 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.97 V		e0	.00002 Amp	41.885 mm	120 ns
M27V256-90F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	3.6 V	5.72 mm	16 mm	Not Qualified	262144 bit	3 V				36.5 mm	90 ns
M27W101-200F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel	TIN	DUAL	R-GDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3		41.885 mm	100 ns
M27W801-150F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	1048576 words	COMMON	3	3/3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V		e3	.000015 Amp	41.885 mm	120 ns
M27V256-200F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	3.6 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	3 V		e0	.00001 Amp	36.92 mm	200 ns	12.75
M27W800-150F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		16	IN-LINE, WINDOW		8		2.54 mm	85 Cel		512KX16	512K	-40 Cel		DUAL	R-GDIP-T42	3.6 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				54.635 mm	150 ns
TS27C64A-20VQ	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0	.0001 Amp		200 ns	12.5
M27V102-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	52.195 mm	120 ns
M27V401-180F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	3 V		e0	.00002 Amp	41.885 mm	180 ns
M27W801-100F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	IN-LINE				2.54 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				41.885 mm	100 ns
M27V400-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.6 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	3 V		e0	.00002 Amp	52.285 mm	100 ns
WS57C43C-45TI	STMicroelectronics	UVPROM	INDUSTRIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3		EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V		e0	.03 Amp	32.005 mm	45 ns
M27W256-80F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28	3.6 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	2.7 V				36.92 mm	80 ns
M27V801-150F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32	3.63 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.97 V		e0	.00002 Amp	41.885 mm	150 ns
M87C257-10XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		100 ns
M27W256-200F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28	3.6 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	2.7 V				36.92 mm	200 ns
M2764A-2F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0			200 ns	12.5
M27V256-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	3.6 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	3 V		e0	.00001 Amp	36.92 mm	100 ns	12.75
M87C257-70F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		70 ns
TTV27C256N-20C-11	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-XDIP-T28				Not Qualified	262144 bit				.0001 Amp		200 ns	12.75
M27V102-200F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	52.195 mm	200 ns
M87C257-15XF7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28			15.24 mm	Not Qualified	262144 bit		LG-MAX	e3	.0001 Amp	38.1 mm	150 ns
M87C257-80F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e3	.0001 Amp		80 ns
M27W102-200F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3/3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	3.6 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3	.000015 Amp	52.195 mm	100 ns
M27W801-200F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	1048576 words	COMMON	3	3/3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V		e3	.000015 Amp	41.885 mm	120 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.