MILITARY EPROM 350

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
CY7C245A-18WMB	Cypress Semiconductor	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	1	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS	e0			.12 Amp	31.877 mm	12 ns	12.5
MR27C6425	Intel	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			30 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					Not Qualified	65536 bit			e0			.00014 Amp		250 ns	12.5
WS57C256F-55CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	133 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e0			.0005 Amp	13.97 mm	55 ns	12.5
WS57C256F-70DMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	117 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0005 Amp	37.215 mm	70 ns	12.5
MD27C64-20	Rochester Electronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5		8	IN-LINE	DIP28,.6			70 Cel	3-STATE	8KX8	8K	0 Cel		DUAL	R-XDIP-T28		5.5 V				65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00014 Amp		200 ns	12.5
MD27C64-35	Rochester Electronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5		8	IN-LINE	DIP28,.6			70 Cel	3-STATE	8KX8	8K	0 Cel		DUAL	R-XDIP-T28		5.5 V				65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00014 Amp		350 ns	12.5
MD27C6420	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V		e0			.00014 Amp		200 ns	12.5
MD27C6435	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V		e0			.00014 Amp		350 ns	12.5
CY7C251-45WMB	Cypress Semiconductor	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words		5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V	POWER SWITCHED PROM	e0			.035 Amp	37.0205 mm	45 ns
MD27512-20	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			150 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	524288 bit			e0					200 ns
CY7C251-55WMB	Cypress Semiconductor	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words		5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V	POWER SWITCHED PROM	e0			.035 Amp	37.0205 mm	55 ns
5962-8764801XX	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		64KX8	64K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0				37.1475 mm	150 ns
SMJ27C256-25J	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-CDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V						36.83 mm	250 ns
5962-8766105XA	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE				125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T28		5.5 V			Not Qualified	131072 bit	4.5 V		e0					200 ns
SMJ27C210-12JM	Texas Instruments	UVPROM	MILITARY	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-55 Cel		DUAL	R-GDIP-T40		5.5 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			120 ns
SMJ27C010A-20J	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						41.91 mm	200 ns
5962-8764802XX	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		64KX8	64K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0				37.1475 mm	200 ns
SMJ27C128-25JM	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel		DUAL	R-CDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	36.83 mm	250 ns	12.5
5962-8606305XX	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0003 Amp	37.1475 mm	150 ns	12.5
5962-8961406QXA	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		120 ns
SMJ27C256JM	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			25 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit						.0003 Amp		250 ns	12.5
SMJ27C256-25JM	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-GDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	36.83 mm	250 ns	12.5
SMJ27C210-30JM	Texas Instruments	UVPROM	MILITARY	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	64KX16	64K	-55 Cel		DUAL	R-GDIP-T40		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						52.07 mm	300 ns
SMJ27C256-150JM	Texas Instruments		MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			25 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit						.0003 Amp		150 ns	12.5
5962-8961406QXX	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					120 ns
5962-8961403QXA	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		200 ns
SMJ27C128-120JM	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel		DUAL	R-CDIP-T28		5.25 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	36.83 mm	120 ns	12.5
5962-8764803XA	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel		DUAL	R-GDIP-T28		5.5 V			Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.000325 Amp		250 ns
5962-8606303XA	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V		e0					300 ns
SMJ27C010-30JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	300 ns
SMJ27C128-1JM	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			30 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel		DUAL	R-XDIP-T28					Not Qualified	131072 bit						.00025 Amp		150 ns	13
SMJ27C010-20JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		200 ns
SMJ27C256-1JM	Texas Instruments		MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit						.00025 Amp		170 ns	13
SMJ2532-30JM	Texas Instruments		MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE				4096 words	COMMON			8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel		DUAL	R-XDIP-T24					Not Qualified	32768 bit				NOT SPECIFIED	NOT SPECIFIED			300 ns
SMJ27C128-12JM	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			25 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel		DUAL	R-XDIP-T28					Not Qualified	131072 bit						.0003 Amp		120 ns	12.5
SMJ27C256-15JM	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-GDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	36.83 mm	150 ns	12.5
SMJ2532-35JM	Texas Instruments	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE				4096 words	COMMON			8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel		DUAL	R-XDIP-T24					Not Qualified	32768 bit								350 ns
SMJ27C010A-12JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	120 ns
SMJ27C512-15J	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		64KX8	64K	-55 Cel		DUAL	R-CDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	VERY HIGH-SPEED SNAP PULSE PROGRAMMING					36.83 mm	150 ns
SMJ27C128JM	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			25 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel		DUAL	R-XDIP-T28					Not Qualified	131072 bit						.0003 Amp		250 ns	12.5
SMJ27C010A-20JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	200 ns
SMJ27C210-15JM	Texas Instruments	UVPROM	MILITARY	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-55 Cel		DUAL	R-GDIP-T40		5.5 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			150 ns
SMJ27C128-100JM	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			30 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel		DUAL	R-XDIP-T28					Not Qualified	131072 bit						.00025 Amp		100 ns	13
5962-9175204MXC	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		512KX8	512K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0				42.2 mm	150 ns
SMJ27C256-15J	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-CDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V						36.83 mm	150 ns
SMJ27C256-2JM	Texas Instruments		MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			25 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit						.0003 Amp		200 ns	12.5
SMJ27C256-12JM	Texas Instruments		MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit						.00025 Amp		120 ns	13
5962-8766106XA	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE				125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T28		5.5 V			Not Qualified	131072 bit	4.5 V		e0					250 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.