MILITARY EPROM 350

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
WS57C128FB-55CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	131072 bit	4.5 V		e0	.0005 Amp	13.97 mm	55 ns	12.5
WS57C128FB-55DMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	133 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0	.0005 Amp	37.215 mm	55 ns	12.5
5962-8606309UX	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0			55 ns
5962-9065803JA	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0	.035 Amp		45 ns
5962-9065802KA	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V			Not Qualified	32768 bit	4.5 V		e0			55 ns
5962-8751503LA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0		32.005 mm	70 ns
5962-87515073A	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		8KX8	8K	-55 Cel	TIN LEAD	QUAD	S-CQCC-N28	5.5 V	2.8956 mm	11.43 mm	Not Qualified	65536 bit	4.5 V	POWER SWITCHED PROM	e0		11.43 mm	35 ns
5962-8606305UC	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0			150 ns
WS27C010L-17DMB	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0	.0001 Amp	42.295 mm	170 ns
5962-87515013C	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC28,.45SQ	EPROMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	Gold (Au)	QUAD	S-CQCC-N28	5.5 V	3.3 mm	11.455 mm	Not Qualified	65536 bit	4.5 V		e4		11.455 mm	45 ns
5962-8751504JX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0		32.15 mm	90 ns
5962-8751504LX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0		32 mm	90 ns
5962-9065801LX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0			70 ns
WS27C256L-20DMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0	.0001 Amp	37.215 mm	200 ns	12.75
5962-8961405YX	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0		13.97 mm	150 ns
WS57C71C-55TMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	133 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0	.025 Amp	37.085 mm	55 ns
WS57C71C-45CMB	STMicroelectronics		MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			84 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32				Not Qualified	262144 bit			e0	.04 Amp		45 ns
5962-8606310YB	STMicroelectronics	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER				125 Cel		32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V			Not Qualified	262144 bit	4.5 V		e0			45 ns
5962-8961405MXX	STMicroelectronics	UVPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V			Not Qualified	1048576 bit	4.5 V		e0			150 ns
5962-87650023X	STMicroelectronics	UVPROM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				125 Cel		2KX8	2K	-55 Cel	TIN LEAD	QUAD	S-CQCC-N28	5.5 V			Not Qualified	16384 bit	4.5 V		e0			55 ns
5962-8751507LA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	POWER SWITCHED PROM	e0	.035 Amp	31.877 mm	35 ns
5962-8961405MYX	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.556 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0		13.97 mm	150 ns
5962-8680505QX	STMicroelectronics	UVPROM	MILITARY	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW			2.54 mm	125 Cel		64KX16	64K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0		52.45 mm	150 ns
5962-87515013X	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		8KX8	8K	-55 Cel		QUAD	S-CQCC-N28	5.5 V	3.3 mm	11.455 mm	Not Qualified	65536 bit	4.5 V				11.455 mm	45 ns
WS57C49C-35DMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.72 mm	15.24 mm	Not Qualified	65536 bit			e0	.035 Amp	32.135 mm	35 ns
5962-87529013X	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2048 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		2KX8	2K	-55 Cel	TIN LEAD	QUAD	S-CQCC-N28	5.5 V	2.8956 mm	11.43 mm	Not Qualified	16384 bit	4.5 V		e0		11.43 mm
5962-8961406MXX	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.588 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0		42.1005 mm	120 ns
5962-8961406MYX	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.556 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0		13.97 mm	120 ns
5962-8606309XX	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T28	5.5 V	5.8928 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			55 ns
5962-9065804LA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V		e0	.035 Amp	32.005 mm	35 ns
5962-8961405YC	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0		13.97 mm	150 ns
WS27C256L-15DMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0	.0001 Amp	37.215 mm	150 ns	12.75
5962-8751504LA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0		32 mm	90 ns
5962-87515033C	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC28,.45SQ	EPROMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	Gold (Au)	QUAD	S-CQCC-N28	5.5 V	3.3 mm	11.455 mm	Not Qualified	65536 bit	4.5 V		e4		11.455 mm	70 ns
5962-8961403XX	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.588 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0		42.1005 mm	200 ns
5962-9065802LA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V		e0	.035 Amp	32.005 mm	55 ns
WS57C45-35HMB	STMicroelectronics		MILITARY	24	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT			93 mA	2048 words	COMMON	5	5	8	FLATPACK	FL24,.4	EPROMs	1.27 mm	125 Cel	REGISTERED	2KX8	2K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDFP-F24				Not Qualified	16384 bit			e0	.03 Amp		35 ns	13.5
5962-8606310YA	STMicroelectronics	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER				125 Cel		32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V			Not Qualified	262144 bit	4.5 V		e0			45 ns
5962-8765004JA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.72 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0	.12 Amp	32.135 mm	45 ns	13.5
5962-8765001LA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	.12 Amp	31.877 mm	50 ns	13.5
5962-87650013X	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		2KX8	2K	-55 Cel	TIN LEAD	QUAD	S-CQCC-N28	5.5 V	2.8956 mm	11.43 mm	Not Qualified	16384 bit	4.5 V		e0		11.43 mm	50 ns
5962-8606305UB	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0			150 ns
WS57C49C-55DMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.72 mm	15.24 mm	Not Qualified	65536 bit			e0	.035 Amp	32.135 mm	55 ns
5962-9065803LX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		4KX8	4K	-55 Cel		DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V				32.005 mm	45 ns
5962-90658043C	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC28,.45SQ	EPROMs	1.27 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	Gold (Au)	QUAD	S-CQCC-N28	5.5 V	3.3 mm	11.455 mm	Not Qualified	32768 bit	4.5 V		e4	.035 Amp	11.455 mm	35 ns
5962-87529013C	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	SYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC28,.45SQ	EPROMs	1.27 mm	125 Cel	REGISTERED	2KX8	2K	-55 Cel	Gold (Au)	QUAD	S-CQCC-N28	5.5 V	2.8956 mm	11.43 mm	Not Qualified	16384 bit	4.5 V		e4	.12 Amp	11.43 mm	45 ns	13.5
WS57C128FB-45DMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0	.0005 Amp	37.215 mm	45 ns	12.75
WS57C191C-35DMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words				8	IN-LINE, WINDOW			2.54 mm	125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24		5.72 mm	15.24 mm	Not Qualified	16384 bit					32.135 mm	35 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.