MILITARY EPROM 350

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
5962-90658023C	STMicroelectronics	UVPROM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.45SQ	EPROMs	1.27 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	Gold (Au)	QUAD	S-CQCC-N28		5.5 V			Not Qualified	32768 bit	4.5 V	e4	.035 Amp		55 ns
5962-8751502LX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		8KX8	8K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V			32.005 mm	55 ns
WS57C49C-70CMB	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	83 mA	8192 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC28,.45SQ	EPROMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	QUAD	S-CQCC-N28			3.3 mm	11.455 mm	Not Qualified	65536 bit		e0	.035 Amp	11.455 mm	70 ns
5962-8765001LX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	e0		31.877 mm	50 ns
5962-8961403MYC	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	2.92 mm	11.4 mm	Not Qualified	1048576 bit	4.5 V	e0		13.95 mm	200 ns
5962-8606309UA	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V	e0	.045 Amp		55 ns	12.5
5962-8765002JX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.72 mm	15.24 mm	Not Qualified	16384 bit	4.5 V			32.135 mm	55 ns
WS57291C-55TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words				8	IN-LINE, WINDOW			2.54 mm	125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24			5.08 mm	7.62 mm	Not Qualified	16384 bit				32.005 mm	55 ns
5962-9065801JX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V			Not Qualified	32768 bit	4.5 V	e0			70 ns
5962-8606310XA	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V	e0	.045 Amp		45 ns	12.5
5962-8751501JX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		8KX8	8K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V			32.135 mm	45 ns
5962-8606308XA	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0	.045 Amp	37.25 mm	70 ns	12.5
5962-9065804KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V	e0			35 ns
WS27C010L-17CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	3.3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e0	.0001 Amp	13.97 mm	170 ns
5962-9065804LX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		4KX8	4K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V			32.005 mm	35 ns
5962-87515023X	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		8KX8	8K	-55 Cel		QUAD	S-CQCC-N28		5.5 V	3.3 mm	11.455 mm	Not Qualified	65536 bit	4.5 V			11.455 mm	55 ns
WS57C51C-45TMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	149 mA	16384 words		5	5	8	IN-LINE, WINDOW	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V	e0	.035 Amp	37.085 mm	45 ns
5962-9065804KA	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V	e0			35 ns
5962-9065804KB	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V	e0			35 ns
WS57C51C-55CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	133 mA	16384 words		5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	3.3 mm	11.43 mm	Not Qualified	131072 bit	4.5 V	e0	.035 Amp	13.97 mm	55 ns
WS27C010L-20DMB	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0	.0001 Amp	42.295 mm	200 ns
WS57C256F-70CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	117 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V	e0	.0005 Amp	13.97 mm	70 ns	12.5
WS57C45-45TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	79 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	REGISTERED	2KX8	2K	-55 Cel		DUAL	R-GDIP-T24	1	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		.03 Amp	32.005 mm	25 ns	13.5
5962-8765004LX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V			32.005 mm	45 ns
5962-8606308YC	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	Gold (Au)	QUAD	R-CQCC-N32		5.5 V	2.92 mm	11.4 mm	Not Qualified	262144 bit	4.5 V	e4	.045 Amp	13.95 mm	70 ns	12.5
5962-8765004KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK				125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDFP-F24		5.5 V			Not Qualified	16384 bit	4.5 V				45 ns
5962-8606306XX	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0		37.1475 mm	120 ns
5962-9065803JX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V			Not Qualified	32768 bit	4.5 V	e0			45 ns
5962-8606305YX	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	3.556 mm	11.43 mm	Not Qualified	262144 bit	4.5 V	e0		13.97 mm	150 ns
WS27C010L-15DMB	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0	.0001 Amp	42.295 mm	150 ns
WS57C43C-35TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V	e0	.03 Amp	32.005 mm	35 ns
5962-8606305UA	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V	e0	.0003 Amp		150 ns	12.5
WS57C256F-55DMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	133 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0	.0005 Amp	37.215 mm	55 ns	12.5
WS57291C-45TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words				8	IN-LINE, WINDOW			2.54 mm	125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24			5.08 mm	7.62 mm	Not Qualified	16384 bit				32.005 mm	45 ns
WS27C010L-20CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	3.3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e0	.0001 Amp	13.97 mm	200 ns
5962-9065804JA	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V			Not Qualified	32768 bit	4.5 V	e0	.035 Amp		35 ns
5962-9065802KC	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	GOLD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V	e4			55 ns
WS57C49C-70TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	83 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24			5.08 mm	7.62 mm	Not Qualified	65536 bit		e0	.035 Amp	32.005 mm	70 ns
5962-9065802KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V	e0			55 ns
5962-8680505QA	STMicroelectronics	UVPROM	MILITARY	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW			2.54 mm	125 Cel		64KX16	64K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T40		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		52.45 mm	150 ns
WS57C49C-45DMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	107 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24			5.72 mm	15.24 mm	Not Qualified	65536 bit		e0	.035 Amp	32.135 mm	45 ns
WS57C51C-45CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		16KX8	16K	-55 Cel		QUAD	R-CQCC-N32		5.5 V	3.3 mm	11.43 mm	Not Qualified	131072 bit	4.5 V			13.97 mm	45 ns
WS57C43C-70TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		4KX8	4K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V			32.005 mm	70 ns
5962-8606306YX	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		32KX8	32K	-55 Cel		QUAD	R-CQCC-N32		5.5 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V			13.97 mm	120 ns
5962-87529023X	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2048 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		2KX8	2K	-55 Cel	TIN LEAD	QUAD	S-CQCC-N28		5.5 V	2.8956 mm	11.43 mm	Not Qualified	16384 bit	4.5 V	e0		11.43 mm
5962-90658043X	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		4KX8	4K	-55 Cel		QUAD	S-CQCC-N28		5.5 V	3.3 mm	11.455 mm	Not Qualified	32768 bit	4.5 V			11.455 mm	35 ns
5962-8765002JA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.72 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	e0	.12 Amp	32.135 mm	55 ns	13.5
5962-9065801KA	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V	e0			70 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.