MILITARY EPROM 350

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
SMJ27C210-17JM	Texas Instruments	UVPROM	MILITARY	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-55 Cel		DUAL	R-GDIP-T40	5.5 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			170 ns
SMJ27C256-20JM	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-GDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	36.83 mm	200 ns	12.5
SMJ27C512-20J	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel		DUAL	R-CDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	VERY HIGH-SPEED SNAP PULSE PROGRAMMING					36.83 mm	200 ns
5962-8766104XX	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE				125 Cel		16KX8	16K	-55 Cel		DUAL	R-GDIP-T28	5.5 V			Qualified	131072 bit	4.5 V							170 ns
5962-9175204MXX	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	512KX8	512K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.588 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	42.1005 mm	150 ns
5962-9175205MXA	Texas Instruments	UVPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE			2.54 mm	125 Cel		512KX8	512K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	7.493 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0					120 ns
5962-8766103XA	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.588 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0				37.1475 mm	150 ns
SMJ27C040-10JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	512KX8	512K	-55 Cel		DUAL	R-GDIP-T32	5.5 V	4.91 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	100 ns
SMJ27C010A-15JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32	5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	150 ns
SMJ27C010-17JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32	5.5 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		170 ns
SMJ27C512-30J	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel		DUAL	R-CDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	VERY HIGH-SPEED SNAP PULSE PROGRAMMING					36.83 mm	300 ns
SMJ27C256-17J	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-CDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V						36.83 mm	170 ns
5962-8606302XX	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.588 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0003 Amp	37.1475 mm	250 ns	12.5
5962-8606310UA	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0			.045 Amp		45 ns	12.5
WS57C256F-55TMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	133 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			.0005 Amp	37.085 mm	55 ns	12.5
5962-8961403YX	STMicroelectronics	UVPROM	MILITARY		WQCCN		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	QUAD		5.5 V	3.556 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0				13.97 mm	200 ns
5962-8961406YX	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		128KX8	128K	-55 Cel		QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V						13.97 mm	120 ns
5962-87515083C	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, GLASS-SEALED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC28,.45SQ	EPROMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	Gold (Au)	QUAD	S-GQCC-N28	5.5 V	3.3 mm	11.455 mm	Not Qualified	65536 bit	4.5 V		e4			.035 Amp	11.455 mm	35 ns
5962-87515033X	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		8KX8	8K	-55 Cel		QUAD	S-CQCC-N28	5.5 V	3.3 mm	11.455 mm	Not Qualified	65536 bit	4.5 V						11.455 mm	70 ns
5962-8606309YC	STMicroelectronics	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	Gold (Au)	QUAD	R-CQCC-N32	5.5 V			Not Qualified	262144 bit	4.5 V		e4			.045 Amp		55 ns	12.5
5962-8961405XX	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				42.295 mm	150 ns
5962-9065801LA	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0			.035 Amp		70 ns
5962-8606310XX	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0					45 ns
5962-8961406XA	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				42.295 mm	120 ns
5962-9065804JX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				125 Cel		4KX8	4K	-55 Cel		DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V							35 ns
5962-9065802JX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0					55 ns
5962-87515023B	STMicroelectronics	UVPROM	MILITARY	28		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER				125 Cel		8KX8	8K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N28	5.5 V			Not Qualified	65536 bit	4.5 V		e0					55 ns
WS27C010L-15CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp	13.97 mm	150 ns
5962-90658033X	STMicroelectronics	UVPROM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	QUAD	S-CQCC-N28	5.5 V			Not Qualified	32768 bit	4.5 V		e0					45 ns
5962-8961406YC	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0				13.97 mm	120 ns
5962-8606309YX	STMicroelectronics	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			115 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		QUAD	R-XQCC-N32				Not Qualified	262144 bit						.045 Amp		55 ns	12.5
WS57191C-45DMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words				8	IN-LINE, WINDOW			2.54 mm	125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24		5.72 mm	15.24 mm	Not Qualified	16384 bit							32.135 mm	45 ns
5962-9065802KB	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V			Not Qualified	32768 bit	4.5 V		e0					55 ns
5962-8751502LA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0				32.005 mm	55 ns
5962-8765001JA	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	16384 bit	4.5 V		e0			.12 Amp		50 ns	13.5
5962-9065801KB	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V			Not Qualified	32768 bit	4.5 V		e0					70 ns
5962-8961406XX	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		128KX8	128K	-55 Cel		DUAL	R-GDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						42.295 mm	120 ns
WS57C191C-45DMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.72 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0			.025 Amp	32.135 mm	45 ns	12.75
WS57C43C-45TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V		e0			.03 Amp	32.005 mm	45 ns
WS57C51C-55TMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	133 mA	16384 words		5	5	8	IN-LINE, WINDOW	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V		e0			.035 Amp	37.085 mm	55 ns
WS57C291C-45TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			.025 Amp	32.005 mm	45 ns	12.75
WS57C51C-45DMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		16KX8	16K	-55 Cel		DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V						37.215 mm	45 ns
5962-87515023C	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC28,.45SQ	EPROMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	Gold (Au)	QUAD	S-CQCC-N28	5.5 V	3.3 mm	11.455 mm	Not Qualified	65536 bit	4.5 V		e4				11.455 mm	55 ns
WS57C51C-55DMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		16KX8	16K	-55 Cel		DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V						37.215 mm	55 ns
5962-8765004KB	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK				125 Cel		2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V			Not Qualified	16384 bit	4.5 V		e0					45 ns
5962-8606308XX	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0				37.25 mm	70 ns
WS57C49C-55FMB	STMicroelectronics	UVPROM	MILITARY	24	WDFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS		8192 words				8	FLATPACK, WINDOW			1.27 mm	125 Cel		8KX8	8K	-55 Cel		DUAL	R-GDFP-F24		2.29 mm	9.652 mm	Not Qualified	65536 bit							15.495 mm	55 ns
5962-90658033C	STMicroelectronics	UVPROM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.45SQ	EPROMs	1.27 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	Gold (Au)	QUAD	S-CQCC-N28	5.5 V			Not Qualified	32768 bit	4.5 V		e4			.035 Amp		45 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.