MILITARY EPROM 350

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

WS57C49C-45TMB

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

107 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.08 mm

7.62 mm

Not Qualified

65536 bit

e0

.035 Amp

32.005 mm

45 ns

5962-8606308YX

STMicroelectronics

UVPROM

MILITARY

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

32768 words

5

8

CHIP CARRIER, WINDOW

1.27 mm

125 Cel

32KX8

32K

-55 Cel

QUAD

R-CQCC-N32

5.5 V

3.3 mm

11.43 mm

Not Qualified

262144 bit

4.5 V

13.97 mm

70 ns

WS27C010L-12CMB

STMicroelectronics

UVPROM

MILITARY

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

125 Cel

3-STATE

128KX8

128K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

3.3 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

e0

.0001 Amp

13.97 mm

120 ns

M27C4001-10F2

STMicroelectronics

MILITARY

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

70 mA

524288 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

125 Cel

3-STATE

512KX8

512K

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T32

Not Qualified

4194304 bit

e0

.0001 Amp

100 ns

M27C4002-10F2

STMicroelectronics

MILITARY

40

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

70 mA

262144 words

COMMON

5

5

16

IN-LINE

DIP40,.6

EPROMs

2.54 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T40

Not Qualified

4194304 bit

e0

.0001 Amp

100 ns

27C512/BXA-20

NXP Semiconductors

UVPROM

MILITARY

28

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

8

IN-LINE

125 Cel

3-STATE

64KX8

64K

-55 Cel

DUAL

R-CDIP-T28

5.5 V

Not Qualified

524288 bit

4.5 V

200 ns

5962-8606302YX

NXP Semiconductors

UVPROM

MILITARY

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

32768 words

5

8

CHIP CARRIER, WINDOW

1.27 mm

125 Cel

32KX8

32K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

3.556 mm

11.43 mm

Not Qualified

262144 bit

4.5 V

e0

13.97 mm

250 ns

8510203ZA

NXP Semiconductors

UVPROM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

8192 words

5

8

CHIP CARRIER

125 Cel

8KX8

8K

-55 Cel

QUAD

R-CQCC-N32

5.5 V

Not Qualified

65536 bit

4.5 V

200 ns

5962-8606301YA

NXP Semiconductors

UVPROM

MILITARY

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

32768 words

5

8

CHIP CARRIER, WINDOW

1.27 mm

125 Cel

32KX8

32K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

3.556 mm

11.43 mm

Not Qualified

262144 bit

4.5 V

e0

13.97 mm

200 ns

5962-8606301YX

NXP Semiconductors

UVPROM

MILITARY

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

32768 words

5

8

CHIP CARRIER, WINDOW

1.27 mm

125 Cel

32KX8

32K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

3.556 mm

11.43 mm

Not Qualified

262144 bit

4.5 V

e0

13.97 mm

200 ns

8510203YA

NXP Semiconductors

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE

125 Cel

8KX8

8K

-55 Cel

DUAL

R-GDIP-T28

5.5 V

65536 bit

4.5 V

200 ns

8510203ZX

NXP Semiconductors

UVPROM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

8192 words

5

8

CHIP CARRIER

125 Cel

8KX8

8K

-55 Cel

QUAD

R-CQCC-N32

5.5 V

Not Qualified

65536 bit

4.5 V

200 ns

8510203YX

NXP Semiconductors

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE

125 Cel

8KX8

8K

-55 Cel

DUAL

R-GDIP-T28

5.5 V

Not Qualified

65536 bit

4.5 V

200 ns

5962-8606302YA

NXP Semiconductors

UVPROM

MILITARY

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

32768 words

5

8

CHIP CARRIER, WINDOW

1.27 mm

125 Cel

32KX8

32K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

3.556 mm

11.43 mm

Not Qualified

262144 bit

4.5 V

e0

13.97 mm

250 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.