BGA FIFO 701

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT72V7280L10BB	Integrated Device Technology	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	10 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	75 mA	16384 words	3.3	3.3	72	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	16KX72	16K	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	100 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	RETRANSMIT	e0	30	225	YES	.015 Amp	17 mm	6.5 ns
IDT72V7280L10BBG	Integrated Device Technology		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	10 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		16384 words	3.3		72	GRID ARRAY				1 mm	70 Cel	16KX72	16K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V	RETRANSMIT	e1	40	260	YES		17 mm	6.5 ns
IDT72V7280L15BB	Integrated Device Technology	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	75 mA	16384 words	3.3	3.3	72	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	16KX72	16K	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	66.7 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	RETRANSMIT	e0	30	225	YES	.015 Amp	17 mm	10 ns
IDT72T36135ML6BBI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	240	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	180 mA	524288 words	2.5	2.5	36	GRID ARRAY	BGA240,18X18,40		FIFOs	1 mm	85 Cel	512KX36	512K	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	S-PBGA-B240	3	2.625 V		166 MHz		Not Qualified	18874368 bit	2.375 V		e0	30	225	YES	.14 Amp		3.8 ns
72V2113L7.5BCGI8	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	3.3		18	GRID ARRAY					85 Cel	256KX18	256K	-40 Cel		BOTTOM	S-PBGA-B100		3.45 V					4718592 bit	3.15 V	AUTO POWER DOWN; RETRANSMIT; IT CAN ALSO BE CONFIGURED AS 512K X 9; ASYNCHRONOUS MODE ALSO POSSIBLE				YES			5 ns
72V2113L7-5BCGI8	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	3.3		18	GRID ARRAY					85 Cel	256KX18	256K	-40 Cel		BOTTOM	S-PBGA-B100		3.45 V					4718592 bit	3.15 V	AUTO POWER DOWN; RETRANSMIT; IT CAN ALSO BE CONFIGURED AS 512K X 9; ASYNCHRONOUS MODE ALSO POSSIBLE				YES			5 ns
72V2113L7-5BCGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	3.3		18	GRID ARRAY					85 Cel	256KX18	256K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B100	3	3.45 V					4718592 bit	3.15 V	AUTO POWER DOWN; RETRANSMIT; IT CAN ALSO BE CONFIGURED AS 512K X 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e1	30	260	YES			5 ns
72V51446L6BB8	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words	3.3		36	GRID ARRAY					70 Cel	32KX36	32K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V					1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES			3.7 ns
IDT72V243L6BCG	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2048 words	3.3	3.3	18	GRID ARRAY	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	2KX18	2K	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	36864 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 4K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	4 ns
IDT72T20118L10BB	Integrated Device Technology	OTHER FIFO	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	10 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	60 mA	131072 words	2.5	1.5/2.5,2.5	20	GRID ARRAY	BGA208,16X16,40	10	FIFOs	1 mm	70 Cel	128KX20	128K	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	S-PBGA-B208	3	2.625 V	1.97 mm	100 MHz	17 mm	Not Qualified	2621440 bit	2.375 V	ALTERNATIVE MEMORY WIDTH 10	e0	30	225	YES	.05 Amp	17 mm	4.5 ns
CYF0018V18L-133BGXI	Cypress Semiconductor	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	524288 words	1.5	1.5,1.8	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	512KX36	512K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	133 MHz	14 mm	Not Qualified	18874368 bit	1.425 V	ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9	e1	30	260	YES		22 mm	10 ns
CYF2036V33L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL		SYNCHRONOUS	500 mA	1048576 words	3.3	3.3	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	1MX36	1M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3			100 MHz		Not Qualified	37748736 bit			e1						10 ns
CYF1018V33L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	41.67 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	1.5	1.5,1.8,3.3	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	512KX36	512K	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	18874368 bit	1.425 V	ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32	e1			YES		22 mm	10 ns
CYF2036V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL		SYNCHRONOUS	500 mA	1048576 words	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	1MX36	1M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3			100 MHz		Not Qualified	37748736 bit			e1						10 ns
CYF1072V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	41.67 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	2097152 words	1.5	1.5,1.8,3.3	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	2MX36	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	75497472 bit	1.425 V	ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32	e1			YES		22 mm	10 ns
CYF1072V33L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	41.67 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	2097152 words	1.5	1.5,1.8,3.3	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	2MX36	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	75497472 bit	1.425 V	ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32	e1			YES		22 mm	10 ns
CYF2144V33L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	4194304 words	1.5	3.3	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	4MX36	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	150994944 bit	1.425 V	ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9	e1			YES		22 mm	10 ns
CYF1018V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	41.67 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	1.5	1.5,1.8,3.3	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	512KX36	512K	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	18874368 bit	1.425 V	ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32	e1			YES		22 mm	10 ns
CYF2144V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	4194304 words	1.5	1.8	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	4MX36	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	150994944 bit	1.425 V	ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9	e1			YES		22 mm	10 ns
CYF2072V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL		SYNCHRONOUS	500 mA	2097152 words	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	2MX36	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3			100 MHz		Not Qualified	75497472 bit			e1	30	260				10 ns
CYF1036V33L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	41.67 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	1.5	1.5,1.8,3.3	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	1MX36	1M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	37748736 bit	1.425 V	ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32	e1			YES		22 mm	10 ns
CYF1036V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	41.67 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	1.5	1.5,1.8,3.3	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	1MX36	1M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	37748736 bit	1.425 V	ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32	e1			YES		22 mm	10 ns
CYF2018V33L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL		SYNCHRONOUS	500 mA	524288 words	3.3	3.3	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	512KX36	512K	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3			100 MHz		Not Qualified	18874368 bit			e1						10 ns
CYF2018V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL		SYNCHRONOUS	500 mA	524288 words	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	512KX36	512K	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3			100 MHz		Not Qualified	18874368 bit			e1						10 ns
CYF0144V18L-133BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	4194304 words	1.5	1.8	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	4MX36	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	133 MHz	14 mm	Not Qualified	150994944 bit	1.425 V	ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9	e1			YES		22 mm	10 ns
CYF0036V18L-133BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	1048576 words	1.5	1.5,1.8	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	1MX36	1M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	133 MHz	14 mm	Not Qualified	37748736 bit	1.425 V	ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9	e1			YES		22 mm	10 ns
CYF0144V33L-133BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	4194304 words	1.5	3.3	36	GRID ARRAY	BGA209,11X19,40		FIFOs	1 mm	85 Cel	4MX36	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	133 MHz	14 mm	Not Qualified	150994944 bit	1.425 V	ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9	e1			YES		22 mm	10 ns
72805LB20BGG	Renesas Electronics		COMMERCIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	20 ns	2	CMOS	BALL	PARALLEL	SYNCHRONOUS		256 words	5		18	GRID ARRAY				1.27 mm	70 Cel	256X18	256	0 Cel	MATTE TIN	BOTTOM	S-PBGA-B121		5.5 V	3.5 mm		15 mm	Not Qualified	4608 bit	4.5 V		e3			YES		15 mm	6.5 ns
72805LB15BG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	256 words	5	5	18	GRID ARRAY	BGA121,11X11,50		FIFOs	1.27 mm	70 Cel	256X18	256	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B121	3	5.5 V	3.5 mm	66 MHz	15 mm	Not Qualified	4608 bit	4.5 V		e0		225	YES	.01 Amp	15 mm	10 ns
72805LB25BGG8	Renesas Electronics		COMMERCIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	25 ns	2	CMOS	BALL	PARALLEL	SYNCHRONOUS		256 words	5		18	GRID ARRAY				1.27 mm	70 Cel	256X18	256	0 Cel		BOTTOM	S-PBGA-B121		5.5 V			15 mm		4608 bit	4.5 V			30	260	YES		15 mm	15 ns
72805LB25BG	Renesas Electronics	OTHER FIFO	COMMERCIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	25 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	256 words	5	5	18	GRID ARRAY	BGA121,11X11,50		FIFOs	1.27 mm	70 Cel	256X18	256	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B121	3	5.5 V		40 MHz	15 mm	Not Qualified	4608 bit	4.5 V		e0		225	YES	.01 Amp	15 mm	15 ns
72805LB15BGGI8	Renesas Electronics		INDUSTRIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	15 ns	2	CMOS	BALL	PARALLEL	SYNCHRONOUS		256 words	5		18	GRID ARRAY				1.27 mm	85 Cel	256X18	256	-40 Cel		BOTTOM	S-PBGA-B121		5.5 V	3.5 mm		15 mm		4608 bit	4.5 V			30	260	YES		15 mm	10 ns
72805LBLB15BG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES			CMOS	BALL		SYNCHRONOUS	100 mA	512 words	5	5	18	GRID ARRAY	BGA121,11X11,50		FIFOs	1.27 mm	70 Cel	512X18	512	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B121				66.7 MHz		Not Qualified	9216 bit			e0				.01 Amp		10 ns
72805LB10BGG	Renesas Electronics		COMMERCIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	10 ns	2	CMOS	BALL	PARALLEL	SYNCHRONOUS		256 words	5		18	GRID ARRAY				1.27 mm	70 Cel	256X18	256	0 Cel	MATTE TIN	BOTTOM	S-PBGA-B121		5.5 V	3.5 mm		15 mm	Not Qualified	4608 bit	4.5 V		e3			YES		15 mm	6.5 ns
72805LB15BGG8	Renesas Electronics		COMMERCIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	15 ns	2	CMOS	BALL	PARALLEL	SYNCHRONOUS		256 words	5		18	GRID ARRAY				1.27 mm	70 Cel	256X18	256	0 Cel		BOTTOM	S-PBGA-B121		5.5 V	3.5 mm		15 mm		4608 bit	4.5 V			30	260	YES		15 mm	10 ns
72805LB25BG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	25 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	256 words	5	5	18	GRID ARRAY	BGA121,11X11,50		FIFOs	1.27 mm	70 Cel	256X18	256	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B121	3	5.5 V		40 MHz	15 mm	Not Qualified	4608 bit	4.5 V		e0		225	YES	.01 Amp	15 mm	15 ns
72805LBLB15BGI	Renesas Electronics	BI-DIRECTIONAL FIFO	INDUSTRIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES			CMOS	BALL		SYNCHRONOUS	100 mA	512 words	5	5	18	GRID ARRAY	BGA121,11X11,50		FIFOs	1.27 mm	85 Cel	512X18	512	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B121				66.7 MHz		Not Qualified	9216 bit			e0				.01 Amp		10 ns
72805LB15BG	Renesas Electronics	OTHER FIFO	COMMERCIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	256 words	5	5	18	GRID ARRAY	BGA121,11X11,50		FIFOs	1.27 mm	70 Cel	256X18	256	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B121	3	5.5 V	3.5 mm	66 MHz	15 mm	Not Qualified	4608 bit	4.5 V		e0		225	YES	.01 Amp	15 mm	10 ns
72805LB15BGGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	15 ns	2	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	256 words	5	5	18	GRID ARRAY	BGA121,11X11,50		FIFOs	1.27 mm	85 Cel	256X18	256	-40 Cel	MATTE TIN	BOTTOM	S-PBGA-B121		5.5 V	3.5 mm	66.7 MHz	15 mm	Not Qualified	4608 bit	4.5 V		e3			YES	.01 Amp	15 mm	10 ns
72805LB25BGG	Renesas Electronics		COMMERCIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	25 ns	2	CMOS	BALL	PARALLEL	SYNCHRONOUS		256 words	5		18	GRID ARRAY				1.27 mm	70 Cel	256X18	256	0 Cel	MATTE TIN	BOTTOM	S-PBGA-B121		5.5 V			15 mm	Not Qualified	4608 bit	4.5 V		e3			YES		15 mm	15 ns
72805LB15BGG	Renesas Electronics	OTHER FIFO	COMMERCIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	15 ns	2	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	256 words	5	5	18	GRID ARRAY	BGA121,11X11,50		FIFOs	1.27 mm	70 Cel	256X18	256	0 Cel	MATTE TIN	BOTTOM	S-PBGA-B121		5.5 V	3.5 mm	66.7 MHz	15 mm	Not Qualified	4608 bit	4.5 V		e3			YES	.01 Amp	15 mm	10 ns
72T18115L4-4BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	240	BGA	SQUARE	PLASTIC/EPOXY	YES	4.44 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	70 mA	262144 words	2.5	2.5	18	GRID ARRAY	BGA240,18X18,40	9	FIFOs	1 mm	70 Cel	256KX18	256K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B240	3	2.625 V	1.97 mm	100 MHz	19 mm	Not Qualified	4718592 bit	2.375 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS OPERATION ALSO POSSIBLE	e0	30	225	YES	.02 Amp	19 mm	3.4 ns
72V51256L7-5BBI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	85 Cel	64KX36	64K	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
72T7295L5BBGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	130 mA	32768 words	2.5	2.5	72	GRID ARRAY	BGA324,18X18,40		FIFOs	1 mm	85 Cel	32KX72	32K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B324	3	2.625 V	1.97 mm	200 MHz	19 mm	Not Qualified	2359296 bit	2.375 V	ASYNCHRONOUS OPERATION ALSO POSSIBLE	e1			YES	.02 Amp	19 mm	3.6 ns
72T18115L6-7BBGI	Renesas Electronics		INDUSTRIAL	240	BGA	SQUARE	PLASTIC/EPOXY	YES	6.7 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	2.5		18	GRID ARRAY				1 mm	85 Cel	256KX18	256K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B240	3	2.625 V	1.97 mm		19 mm	Not Qualified	4718592 bit	2.375 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS OPERATION ALSO POSSIBLE	e1			YES		19 mm	3.8 ns
72825LB15BGGI8	Renesas Electronics		INDUSTRIAL	121	BGA	SQUARE	PLASTIC/EPOXY	YES	15 ns	2	CMOS	BALL	PARALLEL	SYNCHRONOUS		1024 words	5		18	GRID ARRAY				1.27 mm	85 Cel	1KX18	1K	-40 Cel		BOTTOM	S-PBGA-B121		5.5 V	3.5 mm		15 mm		18432 bit	4.5 V			30	260	YES		15 mm	10 ns
72T36115L5BBI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	240	BGA	SQUARE	PLASTIC/EPOXY	YES	5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	60 mA	131072 words	2.5	1.5/2.5,2.5	36	GRID ARRAY	BGA240,18X18,40		FIFOs	1 mm	85 Cel	128KX36	128K	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	S-PBGA-B240	3	2.625 V	1.97 mm	200 MHz	19 mm	Not Qualified	4718592 bit	2.375 V	ASYNCHRONOUS OPERATION ALSO POSSIBLE	e0	30	225	YES	.01 Amp	19 mm	3.6 ns
72T7295L10BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	10 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	60 mA	32768 words	2.5	2.5	72	GRID ARRAY	BGA324,18X18,40		FIFOs	1 mm	70 Cel	32KX72	32K	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	S-PBGA-B324	3	2.625 V	1.97 mm	100 MHz	19 mm	Not Qualified	2359296 bit	2.375 V	ASYNCHRONOUS OPERATION ALSO POSSIBLE	e0	30	225	YES	.05 Amp	19 mm	4.5 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.