MILITARY FIFO 915

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount Cycle Time No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

5962-8753101YX

Renesas Electronics

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

40 ns

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

512 words

5

9

CHIP CARRIER

1.27 mm

125 Cel

512X9

512

-55 Cel

QUAD

R-CQCC-N32

5.5 V

3.048 mm

11.43 mm

Qualified

4608 bit

4.5 V

RETRANSMIT

NOT SPECIFIED

NOT SPECIFIED

NO

13.97 mm

30 ns

IDT7202LA30TDB

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

40 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

5

5

9

IN-LINE

DIP28,.3

FIFOs

2.54 mm

125 Cel

3-STATE

1KX9

1K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.08 mm

25 MHz

7.62 mm

Not Qualified

9216 bit

4.5 V

RETRANSMIT

e0

NO

.0009 Amp

37.1475 mm

30 ns

5962-8753101XA

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

40 ns

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

512 words

5

5

9

IN-LINE

DIP28,.6

FIFOs

2.54 mm

125 Cel

3-STATE

512X9

512

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

1

5.5 V

5.08 mm

25 MHz

15.24 mm

Qualified

4608 bit

4.5 V

RETRANSMIT

e0

240

NO

.0009 Amp

37.211 mm

30 ns

7204L30LB8

Renesas Electronics

BI-DIRECTIONAL FIFO

MILITARY

32

QCCN

RECTANGULAR

UNSPECIFIED

YES

40 ns

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

150 mA

4096 words

5

5

9

CHIP CARRIER

LCC32,.45X.55

FIFOs

1.27 mm

125 Cel

4KX9

4K

-55 Cel

TIN LEAD

QUAD

R-XQCC-N32

1

5.5 V

3.048 mm

25 MHz

11.4554 mm

Not Qualified

36864 bit

4.5 V

RETRANSMIT

e0

240

NO

.004 Amp

13.97 mm

30 ns

7201LA80TPB

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

ASYNCHRONOUS

100 mA

512 words

5

5

9

IN-LINE

DIP28,.3

FIFOs

2.54 mm

125 Cel

512X9

512

-55 Cel

TIN LEAD

DUAL

R-PDIP-T28

33.3 MHz

Not Qualified

e0

.015 Amp

20 ns

IDT7201LA80SOGB

Renesas Electronics

MILITARY

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

100 ns

1

CMOS

MIL-STD-883 Class B

GULL WING

PARALLEL

ASYNCHRONOUS

512 words

5

9

SMALL OUTLINE

1.27 mm

125 Cel

512X9

512

-55 Cel

MATTE TIN

DUAL

R-PDSO-G28

1

5.5 V

3.048 mm

8.763 mm

Not Qualified

4608 bit

4.5 V

RETRANSMIT

e3

NO

18.3642 mm

80 ns

5962-8953606UA

Renesas Electronics

OTHER FIFO

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

30 ns

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

5

5

9

CHIP CARRIER

LCC32,.45X.55

FIFOs

1.27 mm

125 Cel

3-STATE

1KX9

1K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

1

5.5 V

3.048 mm

33.3 MHz

11.43 mm

Qualified

9216 bit

4.5 V

RETRANSMIT

e0

240

NO

.0009 Amp

13.97 mm

20 ns

IDT7201LA20TDB

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

30 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

140 mA

512 words

5

5

9

IN-LINE

DIP28,.3

FIFOs

2.54 mm

125 Cel

3-STATE

512X9

512

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.08 mm

33.33 MHz

7.62 mm

Not Qualified

4608 bit

4.5 V

RETRANSMIT

e0

NO

.0009 Amp

37.1475 mm

20 ns

IDT72520L50LB

Renesas Electronics

BI-DIRECTIONAL FIFO

MILITARY

52

QCCN

SQUARE

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

SYNCHRONOUS

250 mA

1024 words

5

5

18

CHIP CARRIER

LCC52,.75SQ

FIFOs

1.27 mm

125 Cel

1KX18

1K

-55 Cel

TIN LEAD

QUAD

S-XQCC-N52

Not Qualified

18432 bit

e0

.05 Amp

50 ns

7202LA30PB

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

ASYNCHRONOUS

100 mA

1024 words

5

5

9

IN-LINE

DIP28,.6

FIFOs

2.54 mm

125 Cel

1KX9

1K

-55 Cel

TIN LEAD

DUAL

R-PDIP-T28

1

33.3 MHz

Not Qualified

9216 bit

e0

20

240

.015 Amp

20 ns

IDT7201LA20LGB

Renesas Electronics

OTHER FIFO

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

30 ns

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

512 words

5

5

9

CHIP CARRIER

LCC32,.45X.55

FIFOs

1.27 mm

125 Cel

512X9

512

-55 Cel

MATTE TIN

QUAD

R-CQCC-N32

5.5 V

3.048 mm

33.3 MHz

11.43 mm

Not Qualified

4608 bit

4.5 V

RETRANSMIT

e3

NO

.015 Amp

13.97 mm

20 ns

IDT7201LA30PDGB

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

40 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

512 words

5

5

9

IN-LINE

DIP28,.6

FIFOs

2.54 mm

125 Cel

512X9

512

-55 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDIP-T28

1

5.5 V

4.699 mm

15.24 mm

Not Qualified

4608 bit

4.5 V

RETRANSMIT

e3

30

260

NO

.015 Amp

36.576 mm

30 ns

IDT7200L40JB

Renesas Electronics

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

50 ns

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

256 words

5

9

CHIP CARRIER

1.27 mm

125 Cel

256X9

256

-55 Cel

TIN LEAD

QUAD

R-PQCC-J32

1

5.5 V

3.55 mm

11.43 mm

Not Qualified

2304 bit

4.5 V

e0

NO

13.97 mm

40 ns

IDT7201LA30JB

Renesas Electronics

OTHER FIFO

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

40 ns

1

CMOS

MIL-STD-883 Class B

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

512 words

5

5

9

CHIP CARRIER

LDCC32,.5X.6

FIFOs

1.27 mm

125 Cel

512X9

512

-55 Cel

Tin/Lead (Sn85Pb15)

QUAD

R-PQCC-J32

1

5.5 V

3.55 mm

33.3 MHz

11.43 mm

Not Qualified

4608 bit

4.5 V

RETRANSMIT

e0

20

225

NO

.015 Amp

13.97 mm

30 ns

IDT7201LA80TPB

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

100 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

512 words

5

5

9

IN-LINE

DIP28,.3

FIFOs

2.54 mm

125 Cel

512X9

512

-55 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

4.572 mm

33.3 MHz

7.62 mm

Not Qualified

4608 bit

4.5 V

RETRANSMIT

e0

NO

.015 Amp

34.671 mm

80 ns

5962-9324902MXX

Renesas Electronics

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

35 ns

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

SYNCHRONOUS

512 words

5

9

CHIP CARRIER

125 Cel

512X9

512

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

Qualified

4608 bit

4.5 V

e0

YES

35 ns

IDT7203L20LB8

Renesas Electronics

OTHER FIFO

MILITARY

32

QCCN

RECTANGULAR

UNSPECIFIED

YES

30 ns

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

150 mA

2048 words

5

5

9

CHIP CARRIER

LCC32,.45X.55

FIFOs

1.27 mm

125 Cel

3-STATE

2KX9

2K

-55 Cel

TIN LEAD

QUAD

R-XQCC-N32

5.5 V

3.048 mm

33.3 MHz

11.4554 mm

Not Qualified

18432 bit

4.5 V

RETRANSMIT

e0

NO

.004 Amp

13.97 mm

20 ns

7204L30DGB

Renesas Electronics

BI-DIRECTIONAL FIFO

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

40 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

4096 words

5

5

9

IN-LINE

FIFOs

125 Cel

3-STATE

4KX9

4K

-55 Cel

MATTE TIN

DUAL

R-GDIP-T28

5.5 V

25 MHz

Not Qualified

36864 bit

4.5 V

e3

NO

.025 Amp

30 ns

IDT7201LA80SOB

Renesas Electronics

OTHER FIFO

MILITARY

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

100 ns

1

CMOS

MIL-STD-883 Class B

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

512 words

5

5

9

SMALL OUTLINE

SOP28,.4

FIFOs

1.27 mm

125 Cel

512X9

512

-55 Cel

TIN LEAD

DUAL

R-PDSO-G28

1

5.5 V

3.048 mm

33.3 MHz

8.763 mm

Not Qualified

4608 bit

4.5 V

RETRANSMIT

e0

20

225

NO

.015 Amp

18.3642 mm

80 ns

IDT7201LA80LGB

Renesas Electronics

OTHER FIFO

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

100 ns

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

512 words

5

5

9

CHIP CARRIER

LCC32,.45X.55

FIFOs

1.27 mm

125 Cel

512X9

512

-55 Cel

MATTE TIN

QUAD

R-CQCC-N32

5.5 V

3.048 mm

10 MHz

11.43 mm

Not Qualified

4608 bit

4.5 V

RETRANSMIT

e3

NO

.015 Amp

13.97 mm

80 ns

7203L20JB

Renesas Electronics

OTHER FIFO

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

30 ns

1

CMOS

MIL-STD-883 Class B

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

2048 words

5

5

9

CHIP CARRIER

LDCC32,.5X.6

FIFOs

1.27 mm

125 Cel

2KX9

2K

-55 Cel

TIN LEAD

QUAD

R-PQCC-J32

1

5.5 V

3.556 mm

33.3 MHz

11.4554 mm

Not Qualified

18432 bit

4.5 V

RETRANSMIT

e0

20

225

NO

.025 Amp

13.9954 mm

20 ns

IDT7202LA20JGB

Renesas Electronics

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

30 ns

1

CMOS

MIL-STD-883 Class B

J BEND

PARALLEL

ASYNCHRONOUS

1024 words

5

9

CHIP CARRIER

1.27 mm

125 Cel

1KX9

1K

-55 Cel

MATTE TIN

QUAD

R-PQCC-J32

5.5 V

3.55 mm

11.43 mm

Not Qualified

9216 bit

4.5 V

RETRANSMIT

e3

NO

13.97 mm

20 ns

IDT7203L40TPGB

Renesas Electronics

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

50 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

9

IN-LINE

2.54 mm

125 Cel

2KX9

2K

-55 Cel

MATTE TIN

DUAL

R-PDIP-T28

5.5 V

4.572 mm

7.62 mm

Not Qualified

18432 bit

4.5 V

e3

NO

34.671 mm

40 ns

7203L20PB

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

30 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

2048 words

5

5

9

IN-LINE

DIP28,.6

FIFOs

2.54 mm

125 Cel

2KX9

2K

-55 Cel

TIN LEAD

DUAL

R-PDIP-T28

1

5.5 V

4.699 mm

33.3 MHz

15.24 mm

Not Qualified

18432 bit

4.5 V

RETRANSMIT

e0

20

240

NO

.025 Amp

36.576 mm

20 ns

IDT7203L40PDGB

Renesas Electronics

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

50 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

9

IN-LINE

2.54 mm

125 Cel

2KX9

2K

-55 Cel

MATTE TIN

DUAL

R-PDIP-T28

1

5.5 V

4.699 mm

15.24 mm

Not Qualified

18432 bit

4.5 V

e3

NO

36.576 mm

40 ns

IDT72231L25LBSCDS-W

Renesas Electronics

OTHER FIFO

MILITARY

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

SYNCHRONOUS

40 mA

2048 words

5

5

9

CHIP CARRIER

LCC32,.45X.55

FIFOs

1.27 mm

125 Cel

2KX9

2K

-55 Cel

TIN LEAD

QUAD

R-XQCC-N32

40 MHz

Not Qualified

18432 bit

e0

.005 Amp

15 ns

7201LA80LGB

Renesas Electronics

BI-DIRECTIONAL FIFO

MILITARY

32

QCCN

RECTANGULAR

PLASTIC/EPOXY

YES

100 ns

CMOS

MIL-STD-883 Class B (Modified)

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

512 words

5

5

9

CHIP CARRIER

LCC32,.45X.55

FIFOs

1.27 mm

125 Cel

512X9

512

-55 Cel

MATTE TIN

QUAD

R-PQCC-N32

10 MHz

Not Qualified

4608 bit

e3

.015 Amp

80 ns

7204L30JGB

Renesas Electronics

BI-DIRECTIONAL FIFO

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

40 ns

1

CMOS

MIL-STD-883 Class B

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

4096 words

5

5

9

CHIP CARRIER

LDCC32,.5X.6

FIFOs

1.27 mm

125 Cel

3-STATE

4KX9

4K

-55 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQCC-J32

3

5.5 V

3.556 mm

25 MHz

11.4554 mm

Not Qualified

36864 bit

4.5 V

e3

30

260

NO

.025 Amp

13.9954 mm

30 ns

7204L30PB

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

40 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

4096 words

5

5

9

IN-LINE

DIP28,.6

FIFOs

2.54 mm

125 Cel

4KX9

4K

-55 Cel

TIN LEAD

DUAL

R-PDIP-T28

1

5.5 V

25 MHz

Not Qualified

36864 bit

4.5 V

e0

20

240

NO

.025 Amp

30 ns

7204L30LGB8

Renesas Electronics

BI-DIRECTIONAL FIFO

MILITARY

32

QCCN

RECTANGULAR

UNSPECIFIED

YES

40 ns

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

150 mA

4096 words

5

9

CHIP CARRIER

125 Cel

3-STATE

4KX9

4K

-55 Cel

QUAD

R-XQCC-N32

5.5 V

25 MHz

36864 bit

4.5 V

NO

.025 Amp

30 ns

5962-9324903MXA

Renesas Electronics

OTHER FIFO

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

25 ns

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

SYNCHRONOUS

512 words

5

5

9

CHIP CARRIER

LCC32,.45X.55

FIFOs

1.27 mm

125 Cel

512X9

512

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

40 MHz

Qualified

4608 bit

4.5 V

e0

YES

25 ns

5962-9324903MXX

Renesas Electronics

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

25 ns

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

SYNCHRONOUS

512 words

5

9

CHIP CARRIER

125 Cel

512X9

512

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

Qualified

4608 bit

4.5 V

e0

YES

25 ns

7203L20LGB

Renesas Electronics

BI-DIRECTIONAL FIFO

MILITARY

32

QCCN

RECTANGULAR

UNSPECIFIED

YES

30 ns

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

150 mA

2048 words

5

5

9

CHIP CARRIER

FIFOs

125 Cel

3-STATE

2KX9

2K

-55 Cel

MATTE TIN

QUAD

R-XQCC-N32

5.5 V

33.3 MHz

Not Qualified

18432 bit

4.5 V

e3

NO

.025 Amp

20 ns

IDT7201LA20TPB

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

30 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

512 words

5

5

9

IN-LINE

DIP28,.3

FIFOs

2.54 mm

125 Cel

512X9

512

-55 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

4.572 mm

33.3 MHz

7.62 mm

Not Qualified

4608 bit

4.5 V

RETRANSMIT

e0

NO

.015 Amp

34.671 mm

20 ns

7202LA30TPGB

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

40 ns

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

1024 words

5

5

9

IN-LINE

DIP28,.3

FIFOs

2.54 mm

125 Cel

1KX9

1K

-55 Cel

MATTE TIN

DUAL

R-PDIP-T28

25 MHz

Not Qualified

9216 bit

e3

NO

.015 Amp

30 ns

7201LA80SOB

Renesas Electronics

OTHER FIFO

MILITARY

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

38535Q/M;38534H;883B

GULL WING

ASYNCHRONOUS

100 mA

512 words

5

5

9

SMALL OUTLINE

SOP28,.4

FIFOs

1.27 mm

125 Cel

512X9

512

-55 Cel

TIN LEAD

DUAL

R-PDSO-G28

1

33.3 MHz

Not Qualified

e0

20

225

.015 Amp

20 ns

7201LA30TPB

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

ASYNCHRONOUS

100 mA

512 words

5

5

9

IN-LINE

DIP28,.3

FIFOs

2.54 mm

125 Cel

512X9

512

-55 Cel

TIN LEAD

DUAL

R-PDIP-T28

33.3 MHz

Not Qualified

e0

.015 Amp

20 ns

IDT72510L80JB

Renesas Electronics

MILITARY

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

1024 words

5

9

CHIP CARRIER

1.27 mm

125 Cel

1KX9

1K

-55 Cel

TIN LEAD

QUAD

S-PQCC-J52

5.5 V

4.57 mm

19.1262 mm

Not Qualified

9216 bit

4.5 V

e0

19.1262 mm

85 ns

IDT7201LA80TPGB

Renesas Electronics

MILITARY

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

100 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

512 words

5

9

IN-LINE

2.54 mm

125 Cel

512X9

512

-55 Cel

MATTE TIN

DUAL

R-PDIP-T28

5.5 V

4.572 mm

7.62 mm

Not Qualified

4608 bit

4.5 V

RETRANSMIT

e3

NO

34.671 mm

80 ns

IDT7207L20LBG8

Renesas Electronics

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

30 ns

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

32768 words

5

9

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

32KX9

32K

-55 Cel

MATTE TIN

QUAD

R-CQCC-N32

5.5 V

3.048 mm

11.43 mm

Not Qualified

294912 bit

4.5 V

RETRANSMIT

e3

NO

13.97 mm

20 ns

IDT7200L65JB

Renesas Electronics

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

80 ns

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

256 words

5

9

CHIP CARRIER

1.27 mm

125 Cel

256X9

256

-55 Cel

TIN LEAD

QUAD

R-PQCC-J32

1

5.5 V

3.55 mm

11.43 mm

Not Qualified

2304 bit

4.5 V

e0

NO

13.97 mm

65 ns

7200L30JB8

Renesas Electronics

OTHER FIFO

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

40 ns

1

CMOS

MIL-STD-883 Class B

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

256 words

5

5

9

CHIP CARRIER

LDCC32,.5X.6

FIFOs

1.27 mm

125 Cel

256X9

256

-55 Cel

TIN LEAD

QUAD

R-PQCC-J32

1

5.5 V

25 MHz

Not Qualified

2304 bit

4.5 V

e0

20

225

NO

.015 Amp

30 ns

5962-9317703MYX

Renesas Electronics

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

30 ns

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

9

CHIP CARRIER

1.27 mm

125 Cel

16KX9

16K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

3.048 mm

11.43 mm

Qualified

147456 bit

4.5 V

RETRANSMIT

e0

NO

13.97 mm

20 ns

IDT7202LA20LGB

Renesas Electronics

OTHER FIFO

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

30 ns

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

1024 words

5

5

9

CHIP CARRIER

LCC32,.45X.55

FIFOs

1.27 mm

125 Cel

1KX9

1K

-55 Cel

MATTE TIN

QUAD

R-CQCC-N32

5.5 V

3.048 mm

33.3 MHz

11.43 mm

Not Qualified

9216 bit

4.5 V

RETRANSMIT

e3

NO

.015 Amp

13.97 mm

20 ns

IDT7201LA80JGB

Renesas Electronics

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

100 ns

1

CMOS

MIL-STD-883 Class B

J BEND

PARALLEL

ASYNCHRONOUS

512 words

5

9

CHIP CARRIER

1.27 mm

125 Cel

512X9

512

-55 Cel

MATTE TIN

QUAD

R-PQCC-J32

5.5 V

3.55 mm

11.43 mm

Not Qualified

4608 bit

4.5 V

RETRANSMIT

e3

NO

13.97 mm

80 ns

IDT7207L20DBG

Renesas Electronics

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

30 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

9

IN-LINE

2.54 mm

125 Cel

3-STATE

32KX9

32K

-55 Cel

MATTE TIN

DUAL

R-GDIP-T28

5.5 V

5.08 mm

7.62 mm

Not Qualified

294912 bit

4.5 V

RETRANSMIT

e3

NO

37.1475 mm

20 ns

7204L30DB

Renesas Electronics

BI-DIRECTIONAL FIFO

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

40 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

4096 words

5

5

9

IN-LINE

DIP28,.6

FIFOs

2.54 mm

125 Cel

4KX9

4K

-55 Cel

TIN LEAD

DUAL

R-CDIP-T28

1

5.5 V

5.08 mm

25 MHz

7.62 mm

Not Qualified

36864 bit

4.5 V

RETRANSMIT

e0

240

NO

.004 Amp

37.1475 mm

30 ns

IDT7201LA80DGB8

Renesas Electronics

OTHER FIFO

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

100 ns

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

512 words

5

5

9

IN-LINE

DIP28,.6

FIFOs

2.54 mm

125 Cel

512X9

512

-55 Cel

MATTE TIN

DUAL

R-CDIP-T28

5.5 V

10 MHz

Not Qualified

4608 bit

4.5 V

e3

NO

.015 Amp

80 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.