Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
256 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
125 Cel |
256X9 |
256 |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
33.3 MHz |
11.43 mm |
Not Qualified |
2304 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.015 Amp |
13.97 mm |
20 ns |
||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
65 ns |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
135 mA |
8192 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
125 Cel |
3-STATE |
8KX9 |
8K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
15 MHz |
7.62 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.012 Amp |
37.1475 mm |
50 ns |
|||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
SYNCHRONOUS |
50 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
TIN LEAD |
QUAD |
R-XQCC-N32 |
20 MHz |
Not Qualified |
e0 |
.005 Amp |
25 ns |
|||||||||||||||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
33.3 MHz |
Not Qualified |
e0 |
20 |
240 |
.015 Amp |
20 ns |
||||||||||||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
UNSPECIFIED |
YES |
40 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
150 mA |
16384 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
16KX9 |
16K |
-55 Cel |
TIN LEAD |
QUAD |
R-XQCC-N32 |
5.5 V |
3.048 mm |
25 MHz |
11.4554 mm |
Not Qualified |
147456 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.012 Amp |
13.97 mm |
30 ns |
|||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
150 mA |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
125 Cel |
2KX9 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.572 mm |
33.3 MHz |
7.62 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.025 Amp |
34.671 mm |
20 ns |
||||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
125 Cel |
3-STATE |
1KX9 |
1K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
33.3 MHz |
15.24 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.0009 Amp |
37.211 mm |
20 ns |
|||||||
Renesas Electronics |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
50 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
9 |
IN-LINE |
2.54 mm |
125 Cel |
2KX9 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
18432 bit |
4.5 V |
e0 |
NO |
37.211 mm |
40 ns |
|||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
125 Cel |
1KX9 |
1K |
-55 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
33.3 MHz |
15.24 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.015 Amp |
36.576 mm |
20 ns |
||||
Renesas Electronics |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
100 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
9 |
IN-LINE |
2.54 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
37.211 mm |
80 ns |
||||||||||||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
38535Q/M;38534H;883B |
J BEND |
ASYNCHRONOUS |
100 mA |
256 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
125 Cel |
256X9 |
256 |
-55 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
33.3 MHz |
Not Qualified |
e0 |
20 |
225 |
.015 Amp |
20 ns |
||||||||||||||||
|
Renesas Electronics |
MILITARY |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
9 |
IN-LINE |
2.54 mm |
125 Cel |
8KX9 |
8K |
-55 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
15.24 mm |
Not Qualified |
73728 bit |
4.5 V |
e3 |
NO |
36.576 mm |
20 ns |
||||||||||||||
Renesas Electronics |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
40 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
9 |
IN-LINE |
2.54 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
37.211 mm |
30 ns |
||||||||||||||||
Renesas Electronics |
BI-DIRECTIONAL FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
140 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
1 |
5.5 V |
3.048 mm |
33.33 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
240 |
NO |
.0009 Amp |
13.97 mm |
20 ns |
||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 ns |
CMOS |
MIL-STD-883 Class B (Modified) |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
MATTE TIN |
QUAD |
R-PQCC-N32 |
33.3 MHz |
Not Qualified |
4608 bit |
e3 |
.015 Amp |
20 ns |
|||||||||||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
UNSPECIFIED |
YES |
40 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
150 mA |
32768 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
32KX9 |
32K |
-55 Cel |
TIN LEAD |
QUAD |
R-XQCC-N32 |
5.5 V |
3.048 mm |
25 MHz |
11.4554 mm |
Not Qualified |
294912 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.012 Amp |
13.97 mm |
30 ns |
|||||||
Renesas Electronics |
BI-DIRECTIONAL FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
140 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
1 |
5.5 V |
3.048 mm |
33.33 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
240 |
NO |
.0009 Amp |
13.97 mm |
20 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
40 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
512X9 |
512 |
-55 Cel |
MATTE TIN |
QUAD |
R-CQCC-N32 |
5.5 V |
3.048 mm |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
.015 Amp |
13.97 mm |
30 ns |
|||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
UNSPECIFIED |
YES |
40 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
150 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
FIFOs |
125 Cel |
3-STATE |
2KX9 |
2K |
-55 Cel |
MATTE TIN |
QUAD |
R-XQCC-N32 |
5.5 V |
25 MHz |
Not Qualified |
18432 bit |
4.5 V |
e3 |
NO |
.025 Amp |
30 ns |
||||||||||||
Renesas Electronics |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
65 ns |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
9 |
IN-LINE |
2.54 mm |
125 Cel |
8KX9 |
8K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
7.62 mm |
Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
37.1475 mm |
50 ns |
|||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
UNSPECIFIED |
YES |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
150 mA |
4096 words |
5 |
5 |
9 |
CHIP CARRIER |
FIFOs |
125 Cel |
3-STATE |
4KX9 |
4K |
-55 Cel |
MATTE TIN |
QUAD |
R-XQCC-N32 |
5.5 V |
33.3 MHz |
Not Qualified |
36864 bit |
4.5 V |
e3 |
NO |
.025 Amp |
20 ns |
||||||||||||
|
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
40 ns |
1 |
CMOS |
MIL-STD-883 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
256 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
125 Cel |
256X9 |
256 |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
25 MHz |
Not Qualified |
2304 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.015 Amp |
30 ns |
||||||||
Renesas Electronics |
MILITARY |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
65 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
9 |
IN-LINE |
2.54 mm |
125 Cel |
256X9 |
256 |
-55 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.57 mm |
7.62 mm |
Not Qualified |
2304 bit |
4.5 V |
e0 |
NO |
34.67 mm |
50 ns |
|||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
40 ns |
CMOS |
MIL-STD-883 Class B (Modified) |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
MATTE TIN |
QUAD |
R-PQCC-N32 |
Not Qualified |
4608 bit |
e3 |
.015 Amp |
30 ns |
||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
UNSPECIFIED |
YES |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
100 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
1KX9 |
1K |
-55 Cel |
MATTE TIN |
QUAD |
R-XQCC-N32 |
5.5 V |
33.3 MHz |
Not Qualified |
9216 bit |
4.5 V |
e3 |
NO |
.015 Amp |
20 ns |
|||||||||||
|
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
1 |
Not Qualified |
e3 |
30 |
260 |
.015 Amp |
30 ns |
||||||||||||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
50 ns |
1 |
CMOS |
MIL-STD-883 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
125 Cel |
2KX9 |
2K |
-55 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
20 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.025 Amp |
13.9954 mm |
40 ns |
|||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
40 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
150 mA |
2048 words |
5 |
9 |
IN-LINE |
125 Cel |
2KX9 |
2K |
-55 Cel |
DUAL |
R-CDIP-T28 |
5.5 V |
18432 bit |
4.5 V |
RETRANSMIT |
NO |
30 ns |
|||||||||||||||||||
|
Renesas Electronics |
MILITARY |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
9 |
IN-LINE |
2.54 mm |
125 Cel |
4KX9 |
4K |
-55 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
15.24 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
NO |
36.576 mm |
20 ns |
||||||||||||||
Renesas Electronics |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
65 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
9 |
IN-LINE |
2.54 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
37.211 mm |
50 ns |
||||||||||||||||
|
Renesas Electronics |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
IN-LINE |
2.54 mm |
125 Cel |
1KX9 |
1K |
-55 Cel |
MATTE TIN |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
37.1475 mm |
20 ns |
||||||||||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
33.3 MHz |
15.24 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.015 Amp |
36.576 mm |
20 ns |
|||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
150 mA |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
125 Cel |
2KX9 |
2K |
-55 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
33.3 MHz |
15.24 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.025 Amp |
36.576 mm |
20 ns |
|||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
16 words |
5/15 |
4 |
IN-LINE |
DIP16,.3 |
FIFOs |
2.54 mm |
125 Cel |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
1.5 MHz |
Not Qualified |
||||||||||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
MIL-STD-883 Class B (Modified) |
GULL WING |
ASYNCHRONOUS |
100 mA |
256 words |
5 |
5 |
9 |
SMALL OUTLINE |
SOP28,.5 |
FIFOs |
1.27 mm |
125 Cel |
256X9 |
256 |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
1 |
25 MHz |
Not Qualified |
e3 |
.015 Amp |
30 ns |
|||||||||||||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
40 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
1KX9 |
1K |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
5.5 V |
3.048 mm |
25 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.0009 Amp |
13.97 mm |
30 ns |
|||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
38535Q/M;38534H;883B |
GULL WING |
ASYNCHRONOUS |
100 mA |
1024 words |
5 |
5 |
9 |
SMALL OUTLINE |
SOP28,.4 |
FIFOs |
1.27 mm |
125 Cel |
1KX9 |
1K |
-55 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
1 |
33.3 MHz |
Not Qualified |
9216 bit |
e0 |
20 |
225 |
.015 Amp |
20 ns |
|||||||||||||||
Renesas Electronics |
BI-DIRECTIONAL FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
UNSPECIFIED |
YES |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
150 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
2KX9 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
R-XQCC-N32 |
1 |
5.5 V |
3.048 mm |
33.3 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
240 |
NO |
.004 Amp |
13.97 mm |
20 ns |
||||||
|
Renesas Electronics |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
40 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
9 |
IN-LINE |
2.54 mm |
125 Cel |
2KX9 |
2K |
-55 Cel |
MATTE TIN |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
18432 bit |
4.5 V |
e3 |
NO |
37.1475 mm |
30 ns |
|||||||||||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
150 mA |
16384 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
125 Cel |
16KX9 |
16K |
-55 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
33.3 MHz |
15.24 mm |
Not Qualified |
147456 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.025 Amp |
36.576 mm |
20 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
ASYNCHRONOUS |
100 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
125 Cel |
1KX9 |
1K |
-55 Cel |
MATTE TIN |
DUAL |
R-XDIP-T28 |
33.3 MHz |
Not Qualified |
9216 bit |
e3 |
.015 Amp |
20 ns |
|||||||||||||||||
Renesas Electronics |
MILITARY |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
80 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
1KX9 |
1K |
-55 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
3.048 mm |
8.763 mm |
Not Qualified |
9216 bit |
4.5 V |
e0 |
NO |
18.3642 mm |
65 ns |
|||||||||||||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
150 mA |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
125 Cel |
3-STATE |
2KX9 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
33.3 MHz |
7.62 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.004 Amp |
37.1475 mm |
20 ns |
|||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
38535Q/M;38534H;883B |
J BEND |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
33.3 MHz |
Not Qualified |
e0 |
20 |
225 |
.015 Amp |
20 ns |
||||||||||||||||
Renesas Electronics |
BI-DIRECTIONAL FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
125 Cel |
1KX9 |
1K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
1 |
5.5 V |
5.08 mm |
33.3 MHz |
15.24 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
240 |
NO |
.0009 Amp |
37.211 mm |
20 ns |
||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
40 ns |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
150 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
2KX9 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
1 |
5.5 V |
3.048 mm |
25 MHz |
11.43 mm |
Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
240 |
NO |
.025 Amp |
13.97 mm |
30 ns |
|||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
140 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
512X9 |
512 |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
1 |
5.5 V |
3.048 mm |
33.33 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.0009 Amp |
13.97 mm |
20 ns |
||||||
Renesas Electronics |
MILITARY |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
100 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
1KX9 |
1K |
-55 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
3.048 mm |
8.763 mm |
Not Qualified |
9216 bit |
4.5 V |
e0 |
NO |
18.3642 mm |
80 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.