MILITARY FIFO 915

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-9167703MZX	Renesas Electronics		MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	40 ns	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words	5		9	CHIP CARRIER			1.27 mm	125 Cel		8KX9	8K	-55 Cel		QUAD	R-CQCC-N32		5.5 V	3.048 mm		11.43 mm	Qualified	73728 bit	4.5 V	RETRANSMIT		NOT SPECIFIED	NOT SPECIFIED	NO		13.97 mm	30 ns
5962-8953606YA	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	30 ns	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel	3-STATE	1KX9	1K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	1	5.5 V	5.08 mm	33.3 MHz	15.24 mm	Qualified	9216 bit	4.5 V	RETRANSMIT	e0		240	NO	.0009 Amp	37.211 mm	20 ns
7202LA30TPB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		ASYNCHRONOUS	100 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	125 Cel		1KX9	1K	-55 Cel	TIN LEAD	DUAL	R-PDIP-T28				33.3 MHz		Not Qualified	9216 bit			e0				.015 Amp		20 ns
7203L20TPGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	IN-LINE		FIFOs		125 Cel	3-STATE	2KX9	2K	-55 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V		33.3 MHz		Not Qualified	18432 bit	4.5 V		e3			NO	.025 Amp		20 ns
IDT7205L30DB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel	3-STATE	8KX9	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	25 MHz	7.62 mm	Not Qualified	73728 bit	4.5 V	RETRANSMIT	e0			NO	.012 Amp	37.1475 mm	30 ns
7203L40TPB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	50 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	125 Cel		2KX9	2K	-55 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.572 mm	20 MHz	7.62 mm	Not Qualified	18432 bit	4.5 V		e0			NO	.025 Amp	34.671 mm	40 ns
5962-9317702MXX	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	5		9	IN-LINE			2.54 mm	125 Cel		16KX9	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Qualified	147456 bit	4.5 V	RETRANSMIT	e0			NO		37.1475 mm	30 ns
7201LA50DB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	65 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	1	5.5 V	5.08 mm	15 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0		240	NO	.0009 Amp	37.211 mm	50 ns
IDT7201LA50TPB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.572 mm	33.3 MHz	7.62 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0			NO	.015 Amp	34.671 mm	50 ns
7203L40DGB8	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	50 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5		9	IN-LINE				125 Cel		2KX9	2K	-55 Cel		DUAL	R-CDIP-T28		5.5 V					18432 bit	4.5 V	RETRANSMIT				NO			40 ns
5962-8956807UX	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	30 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	5		9	IN-LINE			2.54 mm	125 Cel		4KX9	4K	-55 Cel		DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Qualified	36864 bit	4.5 V	RETRANSMIT		NOT SPECIFIED	NOT SPECIFIED	NO		37.1475 mm	20 ns
IDT7205L20TDGB	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5		9	IN-LINE			2.54 mm	125 Cel		8KX9	8K	-55 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	73728 bit	4.5 V		e3			NO		37.1475 mm	20 ns
7203L40DB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	50 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		2KX9	2K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T28	1	5.5 V	5.08 mm	20 MHz	7.62 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0		240	NO	.004 Amp	37.1475 mm	40 ns
IDT7201LA20TDGB	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	5		9	IN-LINE			2.54 mm	125 Cel		512X9	512	-55 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3			NO		37.1475 mm	20 ns
7201LA80PDGB8	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-T28	1			10 MHz		Not Qualified				e3	30	260		.015 Amp		80 ns
IDT72241L50LBSCDS-W	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES			CMOS	38535Q/M;38534H;883B	NO LEAD		SYNCHRONOUS	50 mA	4096 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel		4KX9	4K	-55 Cel	TIN LEAD	QUAD	R-XQCC-N32				20 MHz		Not Qualified	36864 bit			e0				.005 Amp		25 ns
IDT7207L20JGB	Renesas Electronics		MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5		9	CHIP CARRIER			1.27 mm	125 Cel		32KX9	32K	-55 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.556 mm		11.4554 mm	Not Qualified	294912 bit	4.5 V		e3			NO		13.9954 mm	20 ns
7203L40LB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCN	RECTANGULAR	UNSPECIFIED	YES	50 ns	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel		2KX9	2K	-55 Cel	TIN LEAD	QUAD	R-XQCC-N32	1	5.5 V	3.048 mm	20 MHz	11.4554 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0		240	NO	.004 Amp	13.97 mm	40 ns
IDT72261L25PFB	Renesas Electronics		MILITARY	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	25 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16384 words	5		9	FLATPACK, LOW PROFILE			.8 mm	125 Cel	3-STATE	16KX9	16K	-55 Cel	TIN LEAD	QUAD	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	147456 bit	4.5 V	RETRANSMIT	e0			YES		14 mm
IDT7200L30JB8	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	256 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel		256X9	256	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32	1	5.5 V		25 MHz		Not Qualified	2304 bit	4.5 V		e0	20	225	NO	.015 Amp		30 ns
IDT7205L30TPB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	125 Cel		8KX9	8K	-55 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.572 mm	25 MHz	7.62 mm	Not Qualified	73728 bit	4.5 V	RETRANSMIT	e0			NO	.025 Amp	34.671 mm	30 ns
7203L30JB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel		2KX9	2K	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32	1	5.5 V	3.556 mm	25 MHz	11.4554 mm	Not Qualified	18432 bit	4.5 V		e0	20	225	NO	.025 Amp	13.9954 mm	30 ns
7201LA20PDGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	33.3 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.015 Amp	36.576 mm	20 ns
IDT7200L30SOGB8	Renesas Electronics	OTHER FIFO	MILITARY	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns	1	CMOS	MIL-STD-883 Class B	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	256 words	5	5	9	SMALL OUTLINE	SOP28,.5	FIFOs	1.27 mm	125 Cel		256X9	256	-55 Cel	MATTE TIN	DUAL	R-PDSO-G28	1	5.5 V		25 MHz		Not Qualified	2304 bit	4.5 V		e3			NO	.015 Amp		30 ns
IDT7202LA120SOB	Renesas Electronics		MILITARY	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	140 ns	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1024 words	5		9	SMALL OUTLINE			1.27 mm	125 Cel		1KX9	1K	-55 Cel	TIN LEAD	DUAL	R-PDSO-G28		5.5 V	3.048 mm		8.763 mm	Not Qualified	9216 bit	4.5 V		e0			NO		18.3642 mm	120 ns
IDT7205L30DGB	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5		9	IN-LINE			2.54 mm	125 Cel		8KX9	8K	-55 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	73728 bit	4.5 V		e3			NO		37.211 mm	30 ns
5962-8866906YX	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	30 ns	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	5		9	IN-LINE			2.54 mm	125 Cel		2KX9	2K	-55 Cel		DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT		NOT SPECIFIED	NOT SPECIFIED	NO		37.1475 mm	20 ns
IDT7202LA80TPB	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	100 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE			2.54 mm	125 Cel		1KX9	1K	-55 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.57 mm		7.62 mm	Not Qualified	9216 bit	4.5 V		e0			NO		34.67 mm	80 ns
7201LA50LGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCN	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns		CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel		512X9	512	-55 Cel	MATTE TIN	QUAD	R-PQCC-N32				15 MHz		Not Qualified	4608 bit			e3				.015 Amp		50 ns
5962-8953605YX	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE			2.54 mm	125 Cel		1KX9	1K	-55 Cel		DUAL	R-GDIP-T28		5.5 V	5.08 mm		15.24 mm	Qualified	9216 bit	4.5 V	RETRANSMIT		NOT SPECIFIED	NOT SPECIFIED	NO		37.211 mm	30 ns
IDT7207L30DBG	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5		9	IN-LINE			2.54 mm	125 Cel	3-STATE	32KX9	32K	-55 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	294912 bit	4.5 V	RETRANSMIT	e3			NO		37.1475 mm	30 ns
IDT72261L25TFB	Renesas Electronics		MILITARY	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	25 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16384 words	5		9	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	125 Cel	3-STATE	16KX9	16K	-55 Cel	TIN LEAD	QUAD	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	147456 bit	4.5 V	RETRANSMIT	e0			YES		10 mm
IDT7202LA30DGB8	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		1KX9	1K	-55 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V				Not Qualified	9216 bit	4.5 V		e3			NO	.015 Amp		30 ns
IDT7202LA20TPGB	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE			2.54 mm	125 Cel		1KX9	1K	-55 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	4.572 mm		7.62 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e3			NO		34.671 mm	20 ns
IDT7201LA20DGB8	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V		33.3 MHz		Not Qualified	4608 bit	4.5 V		e3			NO	.015 Amp		20 ns
7202LA20LGB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCN	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns		CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel		1KX9	1K	-55 Cel	MATTE TIN	QUAD	R-PQCC-N32				33.3 MHz		Not Qualified	9216 bit			e3			NO	.015 Amp		20 ns
IDT7200L30JB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	256 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel		256X9	256	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	33.3 MHz	11.43 mm	Not Qualified	2304 bit	4.5 V	RETRANSMIT	e0	20	225	NO	.015 Amp	13.97 mm	30 ns
IDT7207L20PB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		32KX9	32K	-55 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	33.3 MHz	15.24 mm	Not Qualified	294912 bit	4.5 V	RETRANSMIT	e0	20	240	NO	.025 Amp	36.576 mm	20 ns
IDT7201LA20PDGB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	33.3 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.015 Amp	36.576 mm	20 ns
IDT7201LA30PB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	33.3 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0	20	240	NO	.015 Amp	36.576 mm	30 ns
IDT7200L30TDGB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	256 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	125 Cel		256X9	256	-55 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm	25 MHz	7.62 mm	Not Qualified	2304 bit	4.5 V	RETRANSMIT	e3			NO	.015 Amp	37.1475 mm	30 ns
IDT7204L30DBG	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	5		9	IN-LINE			2.54 mm	125 Cel	3-STATE	4KX9	4K	-55 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	36864 bit	4.5 V	RETRANSMIT	e3			NO		37.1475 mm	30 ns
7204L20JB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel		4KX9	4K	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32	1	5.5 V	3.556 mm	33.3 MHz	11.4554 mm	Not Qualified	36864 bit	4.5 V	RETRANSMIT	e0	20	225	NO	.025 Amp	13.9954 mm	20 ns
IDT7203L30PB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		2KX9	2K	-55 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	25 MHz	15.24 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0	20	240	NO	.025 Amp	36.576 mm	30 ns
7201LA80DGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	100 ns		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	MATTE TIN	DUAL	R-XDIP-T28				10 MHz		Not Qualified	4608 bit			e3				.015 Amp		80 ns
7202LA30LGB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCN	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns		CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel		1KX9	1K	-55 Cel	MATTE TIN	QUAD	R-PQCC-N32						Not Qualified	9216 bit			e3			NO	.015 Amp		30 ns
IDT7200L30TDB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	256 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	125 Cel	3-STATE	256X9	256	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	25 MHz	7.62 mm	Not Qualified	2304 bit	4.5 V	RETRANSMIT	e0			NO	.0009 Amp	37.1475 mm	30 ns
IDT72510L40JB	Renesas Electronics		MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		1	CMOS		J BEND				1024 words	5		9	CHIP CARRIER			1.27 mm	125 Cel		1KX9	1K	-55 Cel	TIN LEAD	QUAD	S-PQCC-J52		5.5 V	4.57 mm		19.1262 mm	Not Qualified	9216 bit	4.5 V		e0					19.1262 mm	45 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.