153 Flash Memory 214

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

MTFC32GAPALGT-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

105 Cel

32GX8

32G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

200 MHz

11.5 mm

274877906944 bit

2.7 V

NAND TYPE

13 mm

MTFC64GASAONS-AITESTR

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

68719476736 words

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

95 Cel

64GX8

64G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.461 mm

52 MHz

11.5 mm

549755813888 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NAND TYPE

13 mm

MTFC8GLWDM-3LAATZ

Micron Technology

FLASH CARD

INDUSTRIAL

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

105 Cel

OPEN-DRAIN

8GX8

8G

-40 Cel

YES

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

68719476736 bit

2.7 V

13 mm

MTFC8GLWDM-3MAITZ

Micron Technology

FLASH CARD

INDUSTRIAL

153

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.364 mm

52 MHz

11.5 mm

68719476736 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NAND TYPE

13 mm

MTFC64GAPALGT-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

68719476736 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

85 Cel

64GX8

64G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

200 MHz

11.5 mm

549755813888 bit

2.7 V

NAND TYPE

13 mm

MTFC64GAPALBH-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

68719476736 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

85 Cel

64GX8

64G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

549755813888 bit

2.7 V

e1

30

260

13 mm

2.7

MTFC8GLWDM-AITZ

Micron Technology

FLASH CARD

INDUSTRIAL

153

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.364 mm

52 MHz

11.5 mm

68719476736 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NAND TYPE

13 mm

MTFC8GLWDM-AITA

Micron Technology

FLASH CARD

INDUSTRIAL

153

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.364 mm

52 MHz

11.5 mm

68719476736 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NAND TYPE

13 mm

MTFC256GASAONS-AITES

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

274877906944 words

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

95 Cel

256GX8

256G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.461 mm

52 MHz

11.5 mm

2199023255552 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NAND TYPE

13 mm

MTFC128GASAQJP-IT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

137438953472 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

85 Cel

128GX8

128G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1 mm

200 MHz

11.5 mm

1099511627776 bit

2.7 V

NAND TYPE

13 mm

MTFC128GASAQJP-AIT

Micron Technology

FLASH CARD

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q104

BALL

PARALLEL

SYNCHRONOUS

137438953472 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

1

.5 mm

85 Cel

128GX8

128G

-40 Cel

NO

BOTTOM

R-PBGA-B153

3.6 V

1 mm

200 MHz

11.5 mm

1099511627776 bit

2.7 V

NAND TYPE

13 mm

NO

MTFC16GAKAECN-4MIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16GX8

16G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1 mm

11.5 mm

137438953472 bit

2.7 V

e1

MLC NAND TYPE

13 mm

2.7

MTFC32GAKAEJP-4MIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

32GX8

32G

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B153

3.6 V

1 mm

11.5 mm

274877906944 bit

2.7 V

e1

30

260

13 mm

2.7

MTFC128GASAONS-AITES

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

137438953472 words

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

95 Cel

128GX8

128G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.461 mm

52 MHz

11.5 mm

1099511627776 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NAND TYPE

13 mm

MTFC32GASAONS-AITES

Micron Technology

FLASH

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

95 Cel

32GX8

32G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

274877906944 bit

2.7 V

e1

30

260

13 mm

3.3

MTFC8GLGDM-AITZ

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.374 mm

52 MHz

11.5 mm

68719476736 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NAND TYPE

13 mm

MTFC32GAKAECN-4MIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

32GX8

32G

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B153

3.6 V

1 mm

11.5 mm

274877906944 bit

2.7 V

e1

30

260

MLC NAND TYPE

13 mm

2.7

MTFC32GAPALGT-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

85 Cel

32GX8

32G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

200 MHz

11.5 mm

274877906944 bit

2.7 V

NAND TYPE

13 mm

MTFC16GAPALGT-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

85 Cel

16GX8

16G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

200 MHz

11.5 mm

137438953472 bit

2.7 V

NAND TYPE

13 mm

MTFC4GMWDM-3MAITA

Micron Technology

FLASH CARD

INDUSTRIAL

153

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4294967296 words

8

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

4GX8

4G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.364 mm

52 MHz

11.5 mm

34359738368 bit

2.7 V

NAND TYPE

13 mm

MTFC128GASAQJP-AAT

Micron Technology

FLASH CARD

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q104

BALL

PARALLEL

SYNCHRONOUS

137438953472 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

1

.5 mm

105 Cel

128GX8

128G

-40 Cel

NO

BOTTOM

R-PBGA-B153

3.6 V

1 mm

200 MHz

11.5 mm

1099511627776 bit

2.7 V

NAND TYPE

13 mm

NO

MTFC4GLGDM-AITZ

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4294967296 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

85 Cel

4GX8

4G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

34359738368 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

13 mm

2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.