153 Flash Memory 214

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Length	Programming Voltage (V)	Data Polling
THGBM5G8A4JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			34359738368 words			8						85 Cel	32GX8	32G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					274877906944 bit	2.7 V					NAND TYPE		2.7
KLM4G1FE3B-B001	Samsung	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4294967296 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	4GX8	4G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V	1 mm	52 MHz	11.5 mm		34359738368 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE					13 mm	3.3
MTFC32GASAQHD-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	34359738368 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		5	.5 mm	85 Cel	32GX8	32G	-40 Cel		TIN SILVER COPPER	BOTTOM	R-PBGA-B153	3.6 V	.9 mm	200 MHz	11.5 mm		274877906944 bit	2.7 V		e1	30	260	NAND TYPE	13 mm
MTFC64GASAONS-AITES	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	68719476736 words	3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	95 Cel	64GX8	64G	-40 Cel			BOTTOM	R-PBGA-B153	3.6 V	1.461 mm	52 MHz	11.5 mm		549755813888 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE	13 mm
MTFC64GASAQHD-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	68719476736 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		5	.5 mm	85 Cel	64GX8	64G	-40 Cel			BOTTOM	R-PBGA-B153	3.6 V	.9 mm	200 MHz	11.5 mm		549755813888 bit	2.7 V					NAND TYPE	13 mm
MTFC64GAZAQHD-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	68719476736 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	64GX8	64G	-40 Cel			BOTTOM	R-PBGA-B153	1.95 V	.9 mm	200 MHz	11.5 mm		549755813888 bit	1.7 V					NAND TYPE	13 mm	1.8
MTFC64GAZAQHD-WT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	68719476736 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	85 Cel	64GX8	64G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V	.9 mm		11.5 mm		549755813888 bit	2.7 V					NAND TYPE	13 mm
THGBMAG5A1JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			4294967296 words			8						85 Cel	4GX8	4G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					34359738368 bit	2.7 V					NAND TYPE		2.7
THGBMJG6C1LBAB7	Toshiba	FLASH MODULE	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	8589934592 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	105 Cel	8GX8	8G	-40 Cel			BOTTOM	R-PBGA-B153	3.6 V	1 mm	52 MHz	11.5 mm		68719476736 bit	2.7 V						13 mm	3.3
THGBMAG9A8JBA4G	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			68719476736 words			8						85 Cel	64GX8	64G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					549755813888 bit	2.7 V					NAND TYPE		2.7
THGBM7G8T4JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			34359738368 words			8						85 Cel	32GX8	32G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					274877906944 bit	2.7 V					NAND TYPE		2.7
THGBMAG6A2JBAAR	Toshiba	FLASH CARD	INDUSTRIAL	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			8589934592 words			8						85 Cel	8GX8	8G	-40 Cel			BOTTOM	R-PBGA-B153	3.6 V					68719476736 bit	2.7 V					NAND TYPE
THGBM5G7A2JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			17179869184 words			8						85 Cel	16GX8	16G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					137438953472 bit	2.7 V					NAND TYPE		2.7
THGBM5G9A8JBAIG	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			68719476736 words			8						85 Cel	64GX8	64G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					549755813888 bit	2.7 V					NAND TYPE		2.7
THGBM7G9T8JBAIG	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			68719476736 words			8						85 Cel	64GX8	64G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					549755813888 bit	2.7 V					NAND TYPE		2.7
THGBMHG7C2LBAIL	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	17179869184 words			8	GRID ARRAY					85 Cel	16GX8	16G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					137438953472 bit	2.7 V							2.7
THGBMAG5A1JBAIT	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			4294967296 words			8						85 Cel	4GX8	4G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					34359738368 bit	2.7 V					NAND TYPE		2.7
THGBMHG9C8LBAB8	Toshiba	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	ASYNCHRONOUS	68719476736 words			8	GRID ARRAY		4			105 Cel	64GX8	64G	-40 Cel			BOTTOM	R-PBGA-B153	3.6 V					549755813888 bit	2.7 V	ALSO ORGANISED AS 512GX1						2.7
THGBMAG5A1JBAAR	Toshiba	FLASH CARD	INDUSTRIAL	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			4294967296 words			8						85 Cel	4GX8	4G	-40 Cel			BOTTOM	R-PBGA-B153	3.6 V					34359738368 bit	2.7 V					NAND TYPE
THGBMJG7C2LBAB8	Toshiba	FLASH MODULE	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	17179869184 words	3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	105 Cel	16GX8	16G	-40 Cel			BOTTOM	R-PBGA-B153	3.6 V	1.2 mm	52 MHz	11.5 mm		137438953472 bit	2.7 V						13 mm	3.3
THGBMHG8C4LBAB7	Toshiba	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	ASYNCHRONOUS	34359738368 words			8	GRID ARRAY		4			105 Cel	32GX8	32G	-40 Cel			BOTTOM	R-PBGA-B153	3.6 V					274877906944 bit	2.7 V	ALSO ORGANISED AS 256GX1						2.7
THGBMAG7A2JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			17179869184 words			8						85 Cel	16GX8	16G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					137438953472 bit	2.7 V					NAND TYPE		2.7
THGBMHG7C2LBAB7	Toshiba	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	ASYNCHRONOUS	17179869184 words			8	GRID ARRAY		4			105 Cel	16GX8	16G	-40 Cel			BOTTOM	R-PBGA-B153	3.6 V					137438953472 bit	2.7 V	ALSO ORGANISED AS 128GX1						2.7
THGBMAG8A4JBA4R	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			34359738368 words			8						85 Cel	32GX8	32G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					274877906944 bit	2.7 V					NAND TYPE		2.7
THGBF7T0L8LBATA	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	137438953472 words			8	GRID ARRAY					85 Cel	128GX8	128G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					1099511627776 bit	2.7 V					MLC NAND TYPE		2.7
THGBM9G9T8KBAIG	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			68719476736 words			8						85 Cel	64GX8	64G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					549755813888 bit	2.7 V					MLC NAND TYPE		2.7
THGBF7G9L4LBATR	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	68719476736 words			8	GRID ARRAY					85 Cel	64GX8	64G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					549755813888 bit	2.7 V					MLC NAND TYPE		2.7
THGBM5G5A1JBAIT	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			4294967296 words			8						85 Cel	4GX8	4G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					34359738368 bit	2.7 V					NAND TYPE		2.7
THGBM9G8T4KBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			34359738368 words			8						85 Cel	32GX8	32G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					274877906944 bit	2.7 V					MLC NAND TYPE		2.7
THGBMBG5D1KBAIL	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			4294967296 words			8						85 Cel	4GX8	4G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V					34359738368 bit	2.7 V					MLC NAND TYPE		2.7
THGBM1G3D1EBAI8	Toshiba	FLASH	OTHER	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1073741824 words	3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel	1GX8	1G	-25 Cel		TIN SILVER COPPER	BOTTOM	R-PBGA-B153	3.6 V	1.2 mm		11.5 mm	Not Qualified	8589934592 bit	2.7 V		e1			MLC NAND TYPE	13 mm	3.3
THGBMHG6C1LBAB6	Toshiba	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	ASYNCHRONOUS	8589934592 words			8	GRID ARRAY		4			105 Cel	8GX8	8G	-40 Cel			BOTTOM	R-PBGA-B153	3.6 V					68719476736 bit	2.7 V	ALSO ORGANISED AS 64GX1						2.7
KLMDG8JENB-B0410	Samsung	FLASH	OTHER	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	137438953472 words	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel	128GX8	128G	-25 Cel			BOTTOM	R-PBGA-B153	1.95 V	1.2 mm	200 MHz	11.5 mm		1099511627776 bit	1.7 V					MLC NAND TYPE	13 mm	1.8
KLMBG2JENB-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	34359738368 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	32GX8	32G	-25 Cel			BOTTOM	R-PBGA-B153	1.95 V	1 mm	200 MHz	11.5 mm		274877906944 bit	1.7 V					MLC NAND TYPE	13 mm	1.8
KLMCG2KCTA-B0410	Samsung	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			68719476736 words	1.8		8						85 Cel	64GX8	64G	-25 Cel			BOTTOM	R-PBGA-B153						549755813888 bit		3.3V SUPPLY IS ALSO AVAILABLE				NAND TYPE		1.8
KLMAG1JENB-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	17179869184 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	16GX8	16G	-25 Cel			BOTTOM	R-PBGA-B153	1.95 V	.8 mm	200 MHz	11.5 mm		137438953472 bit	1.7 V					MLC NAND TYPE	13 mm	1.8
KLMCG4JENB-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	68719476736 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	64GX8	64G	-25 Cel			BOTTOM	R-PBGA-B153	1.95 V	1 mm	200 MHz	11.5 mm		549755813888 bit	1.7 V					MLC NAND TYPE	13 mm	1.8
KLM4G1FEPD-B0310	Samsung	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	34359738368 words	1.8		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	32GX1	32G	-25 Cel			BOTTOM	R-PBGA-B153	1.95 V	.8 mm		10 mm		34359738368 bit	1.7 V	ALSO OPERATES AT 2.7V TO 3.6V RANGE		NOT SPECIFIED	NOT SPECIFIED		11 mm	3.3
KLM4G1FE3B-B001003	Samsung	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4294967296 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	4GX8	4G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V	1 mm	52 MHz	11.5 mm		34359738368 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE					13 mm	3.3
KLM4G1FE3B-B001000	Samsung	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4294967296 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	4GX8	4G	-25 Cel			BOTTOM	R-PBGA-B153	3.6 V	1 mm	52 MHz	11.5 mm		34359738368 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE					13 mm	3.3
KLM4G1FE3B-B0010	Samsung	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL							GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm							BOTTOM	R-PBGA-B153		1 mm		11.5 mm									13 mm	3
KLMCG8GESD-B04Q	Samsung	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			68719476736 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	105 Cel	64GX8	64G	-40 Cel			BOTTOM	R-PBGA-B153		1 mm		11.5 mm		549755813888 bit		CAN BE OPERATED AT 3.3V SUPPLY				NOR TYPE	13 mm	1.8
KLM8G1GESD-B04Q0	Samsung	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS	8589934592 words			8	GRID ARRAY					105 Cel	8GX8	8G	-40 Cel			BOTTOM	R-PBGA-B153	1.95 V					68719476736 bit	1.7 V	IT ALSO OPERATES AT 2.7V TO 3.6V				MLC NAND TYPE		1.8
KLM8G1GESD-B04P0	Samsung	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS	8589934592 words			8	GRID ARRAY					85 Cel	8GX8	8G	-40 Cel			BOTTOM	R-PBGA-B153	1.95 V					68719476736 bit	1.7 V	IT ALSO OPERATES AT 2.7V TO 3.6V				MLC NAND TYPE		1.8
MTFC4GMDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4294967296 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	4GX8	4G	-25 Cel	NO	TIN SILVER COPPER	BOTTOM	R-PBGA-B153	3.6 V	.8 mm	52 MHz	11.5 mm		34359738368 bit	2.7 V					MLC NAND TYPE	13 mm	3.3	NO
MTFC32GASAQHD-AIT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS	34359738368 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	85 Cel	32GX8	32G	-40 Cel	NO		BOTTOM	R-PBGA-B153	3.6 V	.9 mm	200 MHz	11.5 mm		274877906944 bit	2.7 V					NAND TYPE	13 mm		NO
MTFC8GLWDM-AITATR	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	8589934592 words			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	8GX8	8G	-40 Cel		TIN SILVER COPPER	BOTTOM	R-PBGA-B153	3.6 V	1.2 mm	52 MHz	11.5 mm		68719476736 bit	2.7 V		e1	30	260	NAND TYPE	13 mm	2.7
MTFC16GLWDM-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	17179869184 words			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	16GX8	16G	-40 Cel			BOTTOM	R-PBGA-B153	3.6 V	1.364 mm	52 MHz	11.5 mm		137438953742 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE	13 mm

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.