153 Flash Memory 214

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
MTFC8GAMALGT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		8589934592 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		5	.5 mm	105 Cel		8GX8	8G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm	68719476736 bit	2.7 V					NAND TYPE		13 mm
KLM8G1GEME-B041	Samsung	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				8589934592 words	1.8		8						85 Cel		8GX8	8G	-25 Cel			BOTTOM		R-PBGA-B153							68719476736 bit						NAND TYPE			1.8
MTFC8GAMALBH-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8589934592 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	3-STATE	8GX8	8G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm	68719476736 bit	2.7 V					NAND TYPE		13 mm	2.7
S40410081B1B1W000	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8589934592 words	3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4		.5 mm	85 Cel		8GX8	8G	-25 Cel			BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm	68719476736 bit	2.7 V					MLC NAND TYPE		13 mm	3
S40410161B1B1W010	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		17179869184 words	3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4		.5 mm	85 Cel		16GX8	16G	-25 Cel			BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm	137438953472 bit	2.7 V					MLC NAND TYPE		13 mm	3
FEMC032GTTE7-T14-20	Flexxon Global	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		34359738368 words	3.3		8	GRID ARRAY					85 Cel		32GX8	32G	-40 Cel			BOTTOM		R-PBGA-B153							274877906944 bit						MLC NAND TYPE			3.3
MTFC8GAMALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		8589934592 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		5	.5 mm	85 Cel		8GX8	8G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm	68719476736 bit	2.7 V					NAND TYPE		13 mm
S40410081B1B1I000	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8589934592 words	3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4		.5 mm	85 Cel		8GX8	8G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm	68719476736 bit	2.7 V					MLC NAND TYPE		13 mm	3
S40410081B1B1I003	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8589934592 words	3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4		.5 mm	85 Cel		8GX8	8G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm	68719476736 bit	2.7 V							13 mm	3
S40410161B1B1I010	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		17179869184 words	3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4		.5 mm	85 Cel		16GX8	16G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm	137438953472 bit	2.7 V					MLC NAND TYPE		13 mm	3
S40410161B1B1I013	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		17179869184 words	3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4		.5 mm	85 Cel		16GX8	16G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm	137438953472 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm	3
EMMC32G-IX29-8AC02	Kingston Technology Company	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		34359738368 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	32GX8	32G	-40 Cel		Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM		R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm	274877906944 bit	2.7 V		e2			SLC NAND TYPE		13 mm	3.3
IS21ES32G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		34359738368 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1		.5 mm	85 Cel	3-STATE	32GX8	32G	-40 Cel	NO	TIN SILVER COPPER	BOTTOM		R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm	274877906944 bit	2.7 V		e1	10	260	MLC NAND TYPE		13 mm	3.3	NO
SFEM008GB1EA1TO-I-GE-121-STD	Swissbit Ag	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				8589934592 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8GX8	8G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm	68719476736 bit	2.7 V					MLC NAND TYPE		13 mm	3.3
THGBF7G8K4LBATR	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		34359738368 words			8	GRID ARRAY					85 Cel		32GX8	32G	-25 Cel			BOTTOM		R-PBGA-B153		3.6 V					274877906944 bit	2.7 V					MLC NAND TYPE			2.7
EMMC04G-M627-M06U	Kingston Technology Company	FLASH		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4294967296 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		4GX8	4G	-25 Cel	NO		BOTTOM	HARDWARE	R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm	34359738368 bit	2.7 V					MLC NAND TYPE		13 mm	3.3	NO
MTFC128GAPALNS-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		137438953472 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	105 Cel		128GX8	128G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm	1099511627776 bit	2.7 V		e1	30	260			13 mm	2.7
MTFC16GAKAEJP-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		17179869184 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16GX8	16G	-40 Cel		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm	137438953472 bit	2.7 V		e1	30	260			13 mm	2.7
MTFC64GASAQHD-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS		68719476736 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	105 Cel		64GX8	64G	-40 Cel	NO	TIN SILVER COPPER	BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm	549755813888 bit	2.7 V		e1	30	260	NAND TYPE		13 mm		NO
KLMCG4JETD-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		68719476736 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		64GX8	64G	-25 Cel			BOTTOM		R-PBGA-B153		1.95 V	1 mm		200 MHz	11.5 mm	549755813888 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM				MLC NAND TYPE		13 mm	1.8
MTFC32GASAQHD-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS		34359738368 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	105 Cel		32GX8	32G	-40 Cel	NO		BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm	274877906944 bit	2.7 V					NAND TYPE		13 mm		NO
MTFC4GLDEA-0MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4294967296 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		4GX8	4G	-25 Cel	NO	TIN SILVER COPPER	BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm	34359738368 bit	2.7 V					MLC NAND TYPE		13 mm	3.3	NO
MTFC4GLDEA-0MWTTR	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4294967296 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		4GX8	4G	-25 Cel	NO	TIN SILVER COPPER	BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm	34359738368 bit	2.7 V		e1			MLC NAND TYPE		13 mm	3.3	NO
MTFC4GLGDM-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4294967296 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		4GX8	4G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1.374 mm		52 MHz	11.5 mm	34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC64GASAQHD-AIT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS		68719476736 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	85 Cel		64GX8	64G	-40 Cel	NO		BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm	549755813888 bit	2.7 V					NAND TYPE		13 mm		NO
SFEM064GB1ED1TO-I-6F-111-STD	Swissbit Ag	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		68719476736 words	3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		64GX8	64G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V			200 MHz	11.5 mm	549755813888 bit	2.7 V					TLC NAND TYPE		13 mm	3.3
IS21ES16G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		17179869184 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1		.5 mm	85 Cel	3-STATE	16GX8	16G	-40 Cel	NO	TIN SILVER COPPER	BOTTOM		R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm	137438953472 bit	2.7 V		e1	10	260	MLC NAND TYPE		13 mm	3.3	NO
IS22ES04G-JCLA1	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		4294967296 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4GX8	4G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B153	3	3.6 V	1 mm			11.5 mm	34359738368 bit	2.7 V		e1	10	260			13 mm	3.3
MTFC16GAPALGT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		17179869184 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		5	.5 mm	105 Cel		16GX8	16G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm	137438953472 bit	2.7 V					NAND TYPE		13 mm
MTFC16GLXAM-WT	Micron Technology	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS	80 mA	17179869184 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	16GX8	16G	-25 Cel			BOTTOM	HARDWARE	R-PBGA-B153		1.95 V	1 mm		52 MHz	11.5 mm	137438953472 bit	1.65 V					NAND TYPE		13 mm	1.8
MTFC32GLXDM-WT	Micron Technology	Embedded MMC		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS	80 mA	34359738368 words	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	32GX8	32G	-25 Cel			BOTTOM	HARDWARE	R-PBGA-B153		1.95 V	1.2 mm		52 MHz	11.5 mm	274877906944 bit	1.65 V					NAND TYPE		13 mm	1.8
MTFC64GAZAQHD-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		68719476736 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	105 Cel		64GX8	64G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B153		1.95 V	.9 mm		200 MHz	11.5 mm	549755813888 bit	1.7 V		e1	30	260	NAND TYPE		13 mm	1.8
SDINBDG4-64G-XI2	Western Digital	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		68719476736 words	3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		64GX8	64G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1.2 mm	3000 Write/Erase Cycles		11 mm	549755813888 bit	2.7 V					MLC NAND TYPE		13.5 mm
SFEM032GB1EA1TO-I-HG-12P-STD	Swissbit Ag	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		34359738368 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	85 Cel		32GX8	32G	-40 Cel	NO		BOTTOM		R-PBGA-B153		3.6 V	1 mm	20000 Write/Erase Cycles	200 MHz	11.5 mm	274877906944 bit	2.7 V					SLC NAND TYPE		13 mm	3.3	NO
SFEM128GB1ED1TO-I-7G-111-STD	Swissbit Ag	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		137438953472 words	3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		128GX8	128G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V			200 MHz	11.5 mm	1099511627776 bit	2.7 V					TLC NAND TYPE		13 mm	3.3
SFEM256GB1ED1TO-I-8H-111-STD	Swissbit Ag	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		274877906944 words	3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		256GX8	256G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V			200 MHz	11.5 mm	2199023255552 bit	2.7 V					TLC NAND TYPE		13 mm	3.3
MTFC8GLXEA-WT	Micron Technology	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS	80 mA	8589934592 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel			BOTTOM	HARDWARE	R-PBGA-B153		1.95 V	.8 mm		52 MHz	11.5 mm	68719476736 bit	1.65 V					NAND TYPE		13 mm	1.8
THGAMVT0T43BAIR	Kioxia Holdings	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	135 mA	137438953472 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		128GX8	128G	-25 Cel	YES		BOTTOM		R-PBGA-B153		1.95 V	1 mm		52 MHz	11.5 mm	1099511627776 bit	1.7 V	3.3V SUPPLY IS ALSO AVAILABLE				NAND TYPE	.00104 Amp	13 mm	1.8
MTFC128GAPALBH-AAT	Micron Technology	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		137438953472 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	105 Cel		128GX8	128G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1.1 mm			11.5 mm	1099511627776 bit	2.7 V					NAND TYPE		13 mm
MTFC128GAZAQJP-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		137438953472 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	105 Cel		128GX8	128G	-40 Cel			BOTTOM		R-PBGA-B153		1.95 V	1 mm		200 MHz	11.5 mm	1099511627776 bit	1.7 V					NAND TYPE		13 mm	1.8
MTFC64GAKAEEY-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		68719476736 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		64GX8	64G	-40 Cel		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm	549755813888 bit	2.7 V		e1	30	260	MLC NAND TYPE		13 mm	2.7
MTFC64GASAONS-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		68719476736 words	3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	105 Cel		64GX8	64G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1.461 mm		52 MHz	11.5 mm	549755813888 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC128GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		137438953472 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20		5	.5 mm	85 Cel		128GX8	128G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm	1099511627776 bit	2.7 V		e1	30	260	NAND TYPE		13 mm
MTFC128GAZAQJP-IT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		137438953472 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	95 Cel		128GX8	128G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm	1099511627776 bit	2.7 V					NAND TYPE		13 mm
THGBMAG6A2JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				8589934592 words			8						85 Cel		8GX8	8G	-25 Cel			BOTTOM		R-PBGA-B153		3.6 V					68719476736 bit	2.7 V					NAND TYPE			2.7
KLM8G2FE3B-B001	Samsung	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8589934592 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8GX8	8G	-25 Cel			BOTTOM		R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm	68719476736 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE						13 mm	3.3
MTFC128GAZAQJP-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		137438953472 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		128GX8	128G	-40 Cel			BOTTOM		R-PBGA-B153		1.95 V	1 mm		200 MHz	11.5 mm	1099511627776 bit	1.7 V					NAND TYPE		13 mm	1.8
MTFC4GMWDM-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4294967296 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4GX8	4G	-40 Cel			BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm	34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.