16 Flash Memory 2,090

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25HL01GTFAMHI011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTFAMHA011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTDPMHA013	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL512TFAMHV011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25HL512TDPMHV011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25HL01GTFAMHV011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL512TFAMHM011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25HL01GTDPMHI011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTFAMHM011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	125 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTDPMHA010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTDPMHV010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTFAMHB011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTDPMHB013	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTDPMHA011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL512TFAMHA010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25HL512TFAMHM010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25HL01GTFAMHA010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25FL164K0XMFV001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	105 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e3			NOR TYPE	.000005 Amp	10.3 mm	3
S25HL512TFAMHI011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25HL512TFAMHI010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25HL01GTFAMHB010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL512TDPMHI010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25HL512TDPMHB010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25FL164K0XMFI000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e3			NOR TYPE	.000005 Amp	10.3 mm	3
S25HL512TFAMHV010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25HL01GTDPMHM011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	125 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTFAMHV013	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25FL164K0XMFI001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e3			NOR TYPE	.000005 Amp	10.3 mm	3
S25HL01GTDPMHI013	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTDPMHB011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTFAMHV010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL512TDPMHV013	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25HL01GTFAMHM010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	125 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
S25HL512TFAMHV013	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm	3
S25FL129P0XMFV011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm		50 ms	SPI	134217728 bit	2.7 V					NOR TYPE	.00001 Amp	10.3 mm	3
S25FL129P0XMFI003	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm		50 ms	SPI	134217728 bit	2.7 V					NOR TYPE	.00001 Amp	10.3 mm	3
S25FL129P0XMFV010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm		50 ms	SPI	134217728 bit	2.7 V					NOR TYPE	.00001 Amp	10.3 mm	3
S25FL129P0XMFV013	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm		50 ms	SPI	134217728 bit	2.7 V					NOR TYPE	.00001 Amp	10.3 mm	3
S25FL064P0XMFV003	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE	SOP16,.4			0.2	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.00001 Amp	10.3 mm	3
S25FL064P0XMFI000	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE	SOP16,.4			0.2	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.00001 Amp	10.3 mm	3
S25FL512SDPMFBG10	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	66 MHz	7.5 mm			SPI	512753664 bit	2.7 V					NOR TYPE	.0003 Amp	10.3 mm	3
S25FL512SDPMFAG10	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	66 MHz	7.5 mm			SPI	512753664 bit	2.7 V					NOR TYPE	.0003 Amp	10.3 mm	3
S25FL064P0XMFV001	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE	SOP16,.4			0.2	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.00001 Amp	10.3 mm	3
S25FL127SABMFV003	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm			SPI	134217728 bit	2.7 V					NOR TYPE	.0003 Amp	10.3 mm	3
S25FL512SDPMFI010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	66 MHz	7.5 mm	Not Qualified		SPI	512753664 bit	2.7 V		e3			NOR TYPE	.0003 Amp	10.3 mm	3
S70FS01GSAGMFB010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	SMALL OUTLINE		2			1.27 mm	105 Cel		256MX4	256M	-40 Cel		DUAL		R-PDSO-G16		2 V	2.65 mm		133 MHz	7.5 mm				1073741824 bit	1.7 V	IT IS ALSO CONFIGURED AS 1G X 1						10.3 mm	1.8
S25FL256LDPMFV000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	66 MHz	7.5 mm			SPI	268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	10.3 mm	3
S25FL128SDSMFBG10	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		80 MHz	7.5 mm		500 ms		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3	30	260			10.3 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.