16 Flash Memory 2,090

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

N25Q512A33GSFH0G

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

536870912 words

3

1

SMALL OUTLINE

1.27 mm

85 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

536870912 bit

2.7 V

NOR TYPE

10.3 mm

3

M25PX32SOVMF6TBA

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

4MX8

4M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

75 MHz

7.5 mm

33554432 bit

2.7 V

10.3 mm

2.7

M25PX64STVMF6G

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

8388608 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

1.27 mm

85 Cel

8MX8

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

67108864 bit

NOR TYPE

.00001 Amp

N25Q00AA43GSFA0G

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1073741824 words

3

1

SMALL OUTLINE

1.27 mm

125 Cel

1GX1

1G

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

1073741824 bit

2.7 V

NOR TYPE

10.3 mm

3

N25Q064A41ESFA0F

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

1.8

1

SMALL OUTLINE

1.27 mm

125 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

108 MHz

7.5 mm

67108864 bit

1.7 V

NOR TYPE

10.3 mm

1.8

M25PX32SVMF6TA

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

4MX8

4M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

75 MHz

7.5 mm

33554432 bit

2.7 V

10.3 mm

2.7

M25P64-VMF6GB

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

20 mA

8388608 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

85 Cel

8MX8

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

50 MHz

Not Qualified

SPI

67108864 bit

NOR TYPE

.0001 Amp

M25PX32STVMF3EBA

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

4194304 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

33554432 bit

NOR TYPE

.00001 Amp

N25Q00AA43GSFH0F

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1073741824 words

3

1

SMALL OUTLINE

1.27 mm

85 Cel

1GX1

1G

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

1073741824 bit

2.7 V

NOR TYPE

10.3 mm

3

M25PX64-VMF3PBA

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

8388608 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

1.27 mm

125 Cel

8MX8

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

67108864 bit

NOR TYPE

.00001 Amp

N25Q032A13ESF40G

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

8388608 words

3

3/3.3

4

SMALL OUTLINE

SOP16,.4

2

Flash Memories

20

1.27 mm

85 Cel

8MX4

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.65 mm

100000 Write/Erase Cycles

108 MHz

7.5 mm

Not Qualified

SPI

33554432 bit

2.7 V

ALSO CAN BE ORGANISED AS 32M X 1

30

260

NOR TYPE

.0001 Amp

10.3 mm

2.7

M25PX64SOVMF6TBA

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

8388608 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

8MX8

8M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

75 MHz

7.5 mm

67108864 bit

2.7 V

10.3 mm

2.7

MT25QU01GABA8ESF-0AAT

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

1073741824 words

1.8

1

SMALL OUTLINE

1.27 mm

105 Cel

1GX1

1G

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

133 MHz

7.5 mm

1073741824 bit

1.7 V

NOR TYPE

10.3 mm

1.8

M25PX32SOVMF3EBA

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

4194304 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

33554432 bit

NOR TYPE

.00001 Amp

N25Q512A13GSF40E

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

536870912 words

3

1

SMALL OUTLINE

1.27 mm

85 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

536870912 bit

2.7 V

NOR TYPE

10.3 mm

3

N25Q256A41ESFA0G

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

268435456 words

1.8

1

SMALL OUTLINE

1.27 mm

125 Cel

256MX1

256M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

108 MHz

7.5 mm

268435456 bit

1.7 V

10.3 mm

1.8

N25Q256A83ESFA0F

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

268435456 words

3

1

SMALL OUTLINE

1.27 mm

125 Cel

256MX1

256M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

268435456 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

10.3 mm

3

N25Q512A71GSF40G

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

536870912 words

1.8

1

SMALL OUTLINE

1.27 mm

85 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

108 MHz

7.5 mm

536870912 bit

1.7 V

NOR TYPE

10.3 mm

1.8

M25PX64SVMF6GB

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

8388608 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

1.27 mm

85 Cel

8MX8

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

67108864 bit

NOR TYPE

.00001 Amp

N25Q256A81ESFA0G

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

33554432 words

1.8

8

SMALL OUTLINE

SOP16,.4

1.27 mm

125 Cel

32MX8

32M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

2 V

2.65 mm

100000 Write/Erase Cycles

108 MHz

7.5 mm

SPI

268435456 bit

1.7 V

NOR TYPE

.00002 Amp

10.3 mm

1.8

N25Q032A11ESFA0F

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

33554432 words

1.8

1

SMALL OUTLINE

1.27 mm

125 Cel

32MX1

32M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

108 MHz

7.5 mm

33554432 bit

1.7 V

NOR TYPE

10.3 mm

1.8

N25Q064A33ESF40F

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

3

1

SMALL OUTLINE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

10.3 mm

3

M25P32-VMF3TGB

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

75 MHz

7.5 mm

33554432 bit

2.7 V

NOR TYPE

10.3 mm

2.7

M25PX16SOVMF3TPB

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

2097152 words

2.5/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

125 Cel

2MX8

2M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

16777216 bit

NOR TYPE

.00001 Amp

N25Q064A21ESF40G

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

1.8

1

SMALL OUTLINE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

108 MHz

7.5 mm

67108864 bit

1.7 V

NOR TYPE

10.3 mm

1.8

M25P64-VMF3TGBA

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

20 mA

8388608 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

125 Cel

8MX8

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

50 MHz

Not Qualified

SPI

67108864 bit

NOR TYPE

.0001 Amp

M25P32-VMF6TG/4

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

20 mA

4194304 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

85 Cel

4MX8

4M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

33554432 bit

NOR TYPE

.00001 Amp

M25PX32SOVMF6FB

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

4194304 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

85 Cel

4MX8

4M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

33554432 bit

NOR TYPE

.00001 Amp

M25PX32SOVMF3FBA

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

4194304 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

33554432 bit

NOR TYPE

.00001 Amp

N25Q00AA23GSF40F

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1073741824 words

3

1

SMALL OUTLINE

1.27 mm

85 Cel

1GX1

1G

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

1073741824 bit

2.7 V

NOR TYPE

10.3 mm

3

M25PX64SVMF6TP

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

8388608 words

3

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

1.27 mm

85 Cel

8MX8

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.65 mm

100000 Write/Erase Cycles

75 MHz

7.5 mm

Not Qualified

15 ms

SPI

67108864 bit

2.7 V

30

260

NOR TYPE

.00001 Amp

10.3 mm

2.7

N25Q512A11GSFA0F

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

536870912 words

1.8

1

SMALL OUTLINE

1.27 mm

125 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

108 MHz

7.5 mm

536870912 bit

1.7 V

NOR TYPE

10.3 mm

1.8

M25PX32-VMF6FB

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

4194304 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

85 Cel

4MX8

4M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

33554432 bit

NOR TYPE

.00001 Amp

N25Q256A23ESF40F

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

268435456 words

3

1

SMALL OUTLINE

1.27 mm

85 Cel

256MX1

256M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

268435456 bit

2.7 V

NOR TYPE

10.3 mm

3

M25PX16-VMF3PB

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

2097152 words

2.5/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

125 Cel

2MX8

2M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

16777216 bit

NOR TYPE

.00001 Amp

M25PX32SOVMF3T

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

75 MHz

7.5 mm

33554432 bit

2.7 V

10.3 mm

2.7

N25Q032A11ESF40E

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1048576 words

1.8

32

SMALL OUTLINE

1.27 mm

85 Cel

1MX32

1M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

108 MHz

7.5 mm

33554432 bit

1.7 V

NOR TYPE

10.3 mm

1.8

N25Q256A83ESFH0G

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

268435456 words

3

1

SMALL OUTLINE

1.27 mm

85 Cel

256MX1

256M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

268435456 bit

2.7 V

NOR TYPE

10.3 mm

3

N25Q512A33GSFH0F

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

536870912 words

3

1

SMALL OUTLINE

1.27 mm

85 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

536870912 bit

2.7 V

NOR TYPE

10.3 mm

3

M25PX32SVMF3T

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

75 MHz

7.5 mm

33554432 bit

2.7 V

10.3 mm

2.7

N25Q064A21ESF40F

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

1.8

1

SMALL OUTLINE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

108 MHz

7.5 mm

67108864 bit

1.7 V

NOR TYPE

10.3 mm

1.8

N25Q064A11ESFH0E

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

1.8

1

SMALL OUTLINE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

108 MHz

7.5 mm

67108864 bit

1.7 V

NOR TYPE

10.3 mm

1.8

N25Q00AA73GSFH0G

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1073741824 words

3

1

SMALL OUTLINE

1.27 mm

85 Cel

1GX1

1G

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

1073741824 bit

2.7 V

NOR TYPE

10.3 mm

3

N25Q512A71GSF40E

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

536870912 words

1.8

1

SMALL OUTLINE

1.27 mm

85 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

108 MHz

7.5 mm

536870912 bit

1.7 V

NOR TYPE

10.3 mm

1.8

M25PX32STVMF3TB

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

75 MHz

7.5 mm

33554432 bit

2.7 V

10.3 mm

2.7

N25Q512A13GSFA0G

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

536870912 words

3

1

SMALL OUTLINE

1.27 mm

125 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

536870912 bit

2.7 V

NOR TYPE

10.3 mm

3

MT25QU512ABA8ESF-0SIT

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

536870912 words

1.8

1

SMALL OUTLINE

1.27 mm

85 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

133 MHz

7.5 mm

536870912 bit

1.7 V

NOR TYPE

10.3 mm

3

M25PX32-VMF6EA

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

4MX8

4M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

75 MHz

7.5 mm

33554432 bit

2.7 V

NOR TYPE

10.3 mm

2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.