56 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29PL064J70BFI101	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32			20	.8 mm	85 Cel		3-STATE	4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.00007 ms	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29PL064J60BFI150	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32		Flash Memories		.8 mm	85 Cel			4MX16	4M	-40 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	9 mm	YES	60 ns	3	YES
S29PL32J55BAI15	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel			2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B56		3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V						NOR TYPE		9 mm		55 ns	3
S29PL127J65BFI131	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	BGA80,8X12,32		Flash Memories		.5 mm	85 Cel			8MX16	8M	-40 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	65 ns	3	YES
AM29LV640MH90REIN	Infineon Technologies	FLASH		56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3.3	YES		16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8		20	.5 mm	85 Cel	NO	3-STATE	4MX16	4M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00009 ms		67108864 bit	3 V		4/8				NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3.3	YES
S29PL127J65TFA080	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel		3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.000065 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	18.4 mm	YES	65 ns	3	YES
S29PL127J60BFA083	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel		3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
S29PL64J60BAW15	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel			4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B56		3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		9 mm		60 ns	3
AM29LV640ML120FIN	Infineon Technologies	FLASH		56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES		16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8		20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00012 ms		67108864 bit	2.7 V		4/8				NOR TYPE	.000005 Amp	18.4 mm	YES	120 ns	3	YES
S29PL127J70BFW131	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	BGA80,8X12,32		Flash Memories		.5 mm	85 Cel			8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29PL127J60BFW083	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel		3-STATE	8MX16	8M	-25 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
S29PL127J60TFA080	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel		3-STATE	8MX16	8M	-40 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3			NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
S29PL127J60BFI132	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	BGA80,8X12,32		Flash Memories		.5 mm	85 Cel			8MX16	8M	-40 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
S29PL064J70BFW102	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32			20	.8 mm	85 Cel		3-STATE	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.00007 ms	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29PL032J70BFW103	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32			20	.8 mm	85 Cel		3-STATE	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.00007 ms	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29PL127J70TFW132	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel			8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29PL032J70BFA100	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32			20	.8 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.00007 ms	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29PL127J65BFA082	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel		3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.000065 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	18.4 mm	YES	65 ns	3	YES
S29PL064J70BFW101	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32			20	.8 mm	85 Cel		3-STATE	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.00007 ms	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29PL064J70BFW153	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32		Flash Memories		.8 mm	85 Cel			4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29PL127J80TFI093	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel		3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		1.95 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00008 ms	BOTTOM/TOP	134217728 bit	1.65 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	18.4 mm	YES	80 ns	1.8	YES
S29PL64J55BAW15	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel			4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B56		3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		9 mm		55 ns	3
S29PL127J70TFW082	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel		3-STATE	8MX16	8M	-25 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29PL127J70TFW012	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		4K,32K	70 mA	8388608 words		YES	1.8,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel			8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	DUAL	R-PDSO-G56	3					Not Qualified		BOTTOM/TOP	134217728 bit			8	e1	40	260	NOR TYPE	.000005 Amp		YES	70 ns	3	YES
AM29LV640MH101EIN	Infineon Technologies	FLASH		56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES		16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8		20	.5 mm	85 Cel	NO	3-STATE	4MX16	4M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.0001 ms		67108864 bit	2.7 V		4/8				NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
S29PL064J70BFA101	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32			20	.8 mm	85 Cel		3-STATE	4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.00007 ms	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29PL032J65BFW150	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel			2MX16	2M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B56	3	3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V			e1			NOR TYPE		9 mm		65 ns	3
S29PL064J60BFI103	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32			20	.8 mm	85 Cel		3-STATE	4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.00006 ms	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	9 mm	YES	60 ns	3	YES
S29PL127J60BFI082	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel		3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
S29PL32J70BAI15	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel			2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B56		3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V						NOR TYPE		9 mm		70 ns	3
S29PL127J80TFW140	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel			8MX16	8M	-25 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	3
AM29LV640MH120FIN	Infineon Technologies	FLASH		56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES		16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8		20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00012 ms		67108864 bit	2.7 V		4/8				NOR TYPE	.000005 Amp	18.4 mm	YES	120 ns	3	YES
S29PL127J60TFW083	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel		3-STATE	8MX16	8M	-25 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
TC58FYM5B3AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories		.8 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		7 mm	Not Qualified		BOTTOM	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58FVM5B2AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories		.8 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified		BOTTOM	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
TC58FYM5T3AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories		.8 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		7 mm	Not Qualified		TOP	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58FYM6B2AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories		.8 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		7 mm	Not Qualified		BOTTOM	67108864 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58FVM6B2AXB70	Toshiba	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	80 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA56,8X12,32	8	Flash Memories		.8 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56						Not Qualified		BOTTOM	67108864 bit			8/16				NOR TYPE	.000025 Amp		YES	70 ns		YES
TC58FVM6T5BXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32		Flash Memories		.8 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified		TOP	67108864 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
TC58FVB321XB-10	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories		.8 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	100 ns	3	YES
TC58FYM7T2AFT70	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	8388608 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel			8MX16	8M	-40 Cel	8, 255	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		1.95 V	1.2 mm		14 mm	Not Qualified		TOP	134217728 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	18.4 mm	YES	80 ns	3	YES
TC58FVM6T2AXB70	Toshiba	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	80 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA56,8X12,32	8	Flash Memories		.8 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56						Not Qualified		TOP	67108864 bit			8/16				NOR TYPE	.000025 Amp		YES	70 ns		YES
TC58DAM82A1XBJ4	Toshiba	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K	30 mA	33554432 words		NO	1.8,3.3	8	GRID ARRAY, FINE PITCH	BGA56,8X12,32		Flash Memories		.8 mm	85 Cel			32MX8	32M	-40 Cel	2K	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56						Not Qualified			268435456 bit			512	e0				.00005 Amp			35 ns		NO
TC58FVM7B2AFT80	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	8388608 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel			8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM	134217728 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58FVM5T2AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories		.8 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified		TOP	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
TC58FVM6B5BXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32		Flash Memories		.8 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
TC58FVM7T2AFT80	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	8388608 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel			8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		TOP	134217728 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58FVM7B2AFT65	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	8388608 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel			8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM	134217728 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.