56 Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58FYM7B2AFT70	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	8388608 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		1.95 V	1.2 mm		14 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	18.4 mm	YES	80 ns	3	YES
TC58FVM5T3AXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,8X12,32	8		.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm	100000 Write/Erase Cycles	7 mm		TOP	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
TC58FVM7T2AFT65	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	8388608 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	TOP	134217728 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58FVT321XB-70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified	TOP	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	80 ns	3	YES
TC58FVM5B3AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
TC58FVM6B2AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	4194304 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified	BOTTOM	67108864 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
TC58FVM6T2AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	4194304 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified	TOP	67108864 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
TC58FVM7T5BTG65	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	TOP	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	65 ns	3	YES
TC58FVM7B5BTG65	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	65 ns	3	YES
TC58FVB321XB-70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	80 ns	3	YES
TC58FVT321XB-10	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified	TOP	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	100 ns	3	YES
TC58FVM5T3AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm		7 mm	Not Qualified	TOP	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
TC58FYM6T2AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		7 mm	Not Qualified	TOP	67108864 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58FVM5T2AXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,8X12,32	8		.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm	100000 Write/Erase Cycles	7 mm		TOP	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
TC58FYM5B2AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58FYM5T2AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		7 mm	Not Qualified	TOP	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58FVM5B3AXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,8X12,32	8		.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1.2 mm	100000 Write/Erase Cycles	7 mm		BOTTOM	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
HN29W3221T-15	Renesas Electronics	FLASH		56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			4194304 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm			4MX8	4M				TIN LEAD		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		33554432 bit	3 V	100000 ERASE/WRITE CYCLE		e0			AND TYPE		18.4 mm		150 ns	3
HN29W3221T-12	Renesas Electronics	FLASH		56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			4194304 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm			4MX8	4M				TIN LEAD		DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		33554432 bit	3 V	100000 ERASE/WRITE CYCLE		e0			AND TYPE		18.4 mm		120 ns	3
K8D6316UBM-PC09T	Samsung	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	DUAL	R-PDSO-G56						Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	90 ns		YES
K9WBG08U5A-9CB00	Samsung	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	30 mA	4294967296 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.63,20		Flash Memories	.5 mm	70 Cel		4GX8	4G	0 Cel	16K	YES		YES	DUAL	R-PDSO-G56						Not Qualified		34359738368 bit			4K					.00005 Amp			20 ns		NO
K8P2716UZC-QI4E0	Samsung	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		134217728 bit	2.7 V		8/16	e6		260	NOR TYPE	.00004 Amp	18.4 mm	YES	80 ns	3	YES
K8P5516UZB-PI4E0	Samsung	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	55 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8/16	e6		260	NOR TYPE	.00004 Amp	18.4 mm	YES	80 ns	3	YES
K9QCG08U5A-9CB0	Samsung	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	30 mA	8589934592 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.63,20		Flash Memories	.5 mm	70 Cel		8GX8	8G	0 Cel	32K	YES		YES	DUAL	R-PDSO-G56						Not Qualified		65536 bit			4K		NOT SPECIFIED	NOT SPECIFIED		.0001 Amp			20 ns		NO
K8P2815UQC-QE4B0	Samsung	FLASH	OTHER	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	BOTTOM BOOT BLOCK, TOP BOOT BLOCK	8			260	NOR TYPE	.00003 Amp	18.4 mm	YES	65 ns	3	YES
K8D6316UBM-YI08T	Samsung	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G56						Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	80 ns		YES
K8P5615UQA-PI4D0	Samsung	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K,128K	50 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-40 Cel	8,126	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V			e6		260	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES
K8P2716UZC-QE4D0	Samsung	FLASH	OTHER	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	128	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		134217728 bit	2.7 V		8/16			260	NOR TYPE	.00004 Amp	18.4 mm	YES	70 ns	3	YES
K8P5516UZB-PE4E0	Samsung	FLASH	OTHER	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	55 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	256	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	18.4 mm	YES	80 ns	3	YES
K8Q2815UQB-PI4DT	Samsung	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	32,252	YES		YES	DUAL	R-PDSO-G56	3					Not Qualified	BOTTOM/TOP	134217728 bit			8			260	NOR TYPE	.00006 Amp		YES	70 ns		YES
K8P2716UZC-QC4D0	Samsung	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel		8MX16	8M	0 Cel	128	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		134217728 bit	2.7 V		8/16			260	NOR TYPE	.00004 Amp	18.4 mm	YES	70 ns	3	YES
K8Q2815UQB-PE4DT	Samsung	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	32,252	YES		YES	DUAL	R-PDSO-G56	3					Not Qualified	BOTTOM/TOP	134217728 bit			8			260	NOR TYPE	.00006 Amp		YES	70 ns		YES
K8Q2815UQB-PE4C0	Samsung	FLASH	COMMERCIAL EXTENDED	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	32,252	YES		YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8			260	NOR TYPE	.00006 Amp		YES	65 ns	2.7	YES
K8P2815UQC-QC4C0	Samsung	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		8MX16	8M	0 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	BOTTOM BOOT BLOCK, TOP BOOT BLOCK							18.4 mm		65 ns	3
K9QCG08U5A-9IB00	Samsung	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	30 mA	8589934592 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.63,20		Flash Memories	.5 mm	85 Cel		8GX8	8G	-40 Cel	32K	YES		YES	DUAL	R-PDSO-G56						Not Qualified		65536 bit			4K					.0001 Amp			20 ns		NO
K8P5615UQA-PE4D0	Samsung	FLASH	COMMERCIAL EXTENDED	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K,128K	50 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	8,126	YES		YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V					260	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES
K8P2815UQC-QI4B0	Samsung	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	BOTTOM BOOT BLOCK, TOP BOOT BLOCK	8			260	NOR TYPE	.00003 Amp	18.4 mm	YES	65 ns	3	YES
K8Q2815UQB-PC4B0	Samsung	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	70 Cel		8MX16	8M	0 Cel	32,252	YES		YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8			260	NOR TYPE	.00006 Amp		YES	60 ns	2.7	YES
K8P2815UQC-QI4C0	Samsung	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	BOTTOM BOOT BLOCK, TOP BOOT BLOCK	8			260	NOR TYPE	.00003 Amp	18.4 mm	YES	65 ns	3	YES
K9QCG08U5A-9IB0	Samsung	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	30 mA	8589934592 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.63,20		Flash Memories	.5 mm	85 Cel		8GX8	8G	-40 Cel	32K	YES		YES	DUAL	R-PDSO-G56						Not Qualified		65536 bit			4K					.0001 Amp			20 ns		NO
K8Q2815UQB-PE4A0	Samsung	FLASH	COMMERCIAL EXTENDED	56	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE					85 Cel		8MX16	8M	-25 Cel					DUAL	R-PDSO-G56		3.6 V				Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V						NOR TYPE				55 ns	2.7
K8Q2815UQB-PI4A0	Samsung	FLASH	INDUSTRIAL	56	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE					85 Cel		8MX16	8M	-40 Cel					DUAL	R-PDSO-G56		3.6 V				Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V						NOR TYPE				55 ns	2.7
K9QCG08U5A-9IB0T	Samsung	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	30 mA	8589934592 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.63,20		Flash Memories	.5 mm	85 Cel		8GX8	8G	-40 Cel	32K	YES		YES	DUAL	R-PDSO-G56						Not Qualified		65536 bit			4K					.0001 Amp			20 ns		NO
K8D6316UBM-PI07T	Samsung	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G56						Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	70 ns		YES
K8D6316UBM-YC07T	Samsung	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	DUAL	R-PDSO-G56						Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	70 ns		YES
K9WBG08U5A-9IB0T	Samsung	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	30 mA	4294967296 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.63,20		Flash Memories	.5 mm	85 Cel		4GX8	4G	-40 Cel	16K	YES		YES	DUAL	R-PDSO-G56						Not Qualified		34359738368 bit			4K					.00005 Amp			20 ns		NO
K8P2716UZC-QC4E0	Samsung	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel		8MX16	8M	0 Cel	128	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		134217728 bit	2.7 V		8/16			260	NOR TYPE	.00004 Amp	18.4 mm	YES	80 ns	3	YES
K9WBG08U5A-9CB0	Samsung	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	30 mA	4294967296 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.63,20		Flash Memories	.5 mm	70 Cel		4GX8	4G	0 Cel	16K	YES		YES	DUAL	R-PDSO-G56						Not Qualified		34359738368 bit			4K					.00005 Amp			20 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.