BGA Flash Memory 2,062

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S26KL256SDABHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY					85 Cel	32MX8	32M	-40 Cel				BOTTOM	R-PBGA-B24	3	3.6 V			268435456 bit	2.7 V								96 ns	3
M29DW128G60ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64			Not Qualified	BOTTOM/TOP	134217728 bit			8			NOR TYPE	.0001 Amp	YES	60 ns		YES
PC28F128J3D75A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	54 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64			Not Qualified		134217728 bit			4/8	30	260	NOR TYPE	.00012 Amp	YES	75 ns		NO
RC28F128P30T85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES		BOTTOM	S-PBGA-B64			Not Qualified	TOP	134217728 bit			4			NOR TYPE	.000075 Amp	YES	85 ns		NO
S26KS256SDPBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY					105 Cel	32MX8	32M	-40 Cel				BOTTOM	R-PBGA-B24	3	1.95 V			268435456 bit	1.7 V								96 ns	1.8
S29AL008J70BFA020	Cypress Semiconductor	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY		8			85 Cel	512KX16	512K	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V			8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED				70 ns	3
TMS28F800VB12CE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800ET70BQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800LT10BE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800VT10CQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800ST70BE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800LB12BE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800LB12CE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800ET80CE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800EB70BE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800VT12BE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800EB70BL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					70 Cel	1MX8	1M	0 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800ST80BQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800LT12BE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800VB10CE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800SB70CQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800LT10CL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					70 Cel	1MX8	1M	0 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800ST70BQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800LT10CE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800EB80CE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800ET80BE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800SB80CL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					70 Cel	1MX8	1M	0 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800ST80CE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800ST70BL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					70 Cel	1MX8	1M	0 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800VT10BE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800VB12BL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					70 Cel	1MX8	1M	0 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800ZB70CE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		5.5 V	Not Qualified	BOTTOM	8388608 bit	4.5 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			70 ns	3
TMS28F800VT10BL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					70 Cel	1MX8	1M	0 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800ZT80BE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		5.5 V	Not Qualified	TOP	8388608 bit	4.5 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			80 ns	3
TMS28F800ET80CQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800EB70CL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					70 Cel	1MX8	1M	0 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800EB80BQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800LB12CQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800ET70BE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800LT10BL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					70 Cel	1MX8	1M	0 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800VB10CQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800VB10BL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					70 Cel	1MX8	1M	0 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800VT10BQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800LB12BQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800LT10CQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					125 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800LT12CL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					70 Cel	1MX8	1M	0 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			120 ns	3
TMS28F800LB10CL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					70 Cel	1MX8	1M	0 Cel				BOTTOM	R-PBGA-B48		3.6 V	Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800ZT80CE	Texas Instruments	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	GRID ARRAY					85 Cel	1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48		5.5 V	Not Qualified	TOP	8388608 bit	4.5 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			80 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.