BGA Flash Memory 2,062

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28W640FSB10ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	67108864 bit				e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M28W640FSB90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	67108864 bit					NOR TYPE	.000005 Amp		YES	90 ns		NO
M28W640FSB85ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	67108864 bit					NOR TYPE	.000005 Amp		YES	85 ns		NO
M58BW032BT45ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	TOP	33554432 bit			4		NOR TYPE	.0001 Amp		YES	45 ns		NO
M28W320FST85ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64				Not Qualified	TOP	33554432 bit					NOR TYPE	.000005 Amp		YES	85 ns		NO
M28W320FST90ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64				Not Qualified	TOP	33554432 bit				e0	NOR TYPE	.000005 Amp		YES	90 ns		NO
M28W320FSB90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	33554432 bit					NOR TYPE	.000005 Amp		YES	90 ns		NO
M58BW032BB45ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK	4		NOR TYPE	.0001 Amp	12 mm	YES	45 ns	3.3	NO
M58BW032DT55ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	TOP	33554432 bit			4		NOR TYPE	.0001 Amp		YES	55 ns		NO
M58BW032DT60ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	TOP	33554432 bit			4		NOR TYPE	.0001 Amp		YES	60 ns		NO
M58BW032DT55ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.6 V	1.7 mm	10 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4		NOR TYPE	.0001 Amp	12 mm	YES	55 ns	3.3	NO
M28W320FST10ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64				Not Qualified	TOP	33554432 bit					NOR TYPE	.000005 Amp		YES	100 ns		NO
M58BW032DB60ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK	4		NOR TYPE	.0001 Amp	12 mm	YES	60 ns	3.3	NO
M58BW032BT55ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.6 V	1.7 mm	10 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4		NOR TYPE	.0001 Amp	12 mm	YES	55 ns	3.3	NO
M29DW128G60ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K,128K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8		NOR TYPE	.0001 Amp		YES	60 ns		YES
M58BW032DT55ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	TOP	33554432 bit			4		NOR TYPE	.0001 Amp		YES	55 ns		NO
M28W320FST10ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64				Not Qualified	TOP	33554432 bit				e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M28W640FSB85ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	67108864 bit					NOR TYPE	.000005 Amp		YES	85 ns		NO
M58BW032DB55ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK	4		NOR TYPE	.0001 Amp	12 mm	YES	55 ns	3.3	NO
M58BW032DT60ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.6 V	1.7 mm	10 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4		NOR TYPE	.0001 Amp	12 mm	YES	60 ns	3.3	NO
M28W640FST85ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	S-PBGA-B64				Not Qualified	TOP	67108864 bit					NOR TYPE	.000005 Amp		YES	85 ns		NO
M28W640FSB90ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	67108864 bit				e0	NOR TYPE	.000005 Amp		YES	90 ns		NO
M58BW032BT55ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	TOP	33554432 bit			4		NOR TYPE	.0001 Amp		YES	55 ns		NO
M28W320FST90ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64				Not Qualified	TOP	33554432 bit					NOR TYPE	.000005 Amp		YES	90 ns		NO
M58BW032DT60ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	TOP	33554432 bit			4		NOR TYPE	.0001 Amp		YES	60 ns		NO
M58BW032DB55ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	BOTTOM	33554432 bit			4		NOR TYPE	.0001 Amp		YES	55 ns		NO
M58BW032BB60ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	BOTTOM	33554432 bit			4		NOR TYPE	.0001 Amp		YES	60 ns		NO
M58BW032BB55ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK	4		NOR TYPE	.0001 Amp	12 mm	YES	55 ns	3.3	NO
M28W640FST10ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64				Not Qualified	TOP	67108864 bit				e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M28W640FST10ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	S-PBGA-B64				Not Qualified	TOP	67108864 bit					NOR TYPE	.000005 Amp		YES	100 ns		NO
M29W128GH60ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			8/16		NOR TYPE	.0001 Amp		YES	60 ns		YES
M28W640FST85ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64				Not Qualified	TOP	67108864 bit				e0	NOR TYPE	.000005 Amp		YES	85 ns		NO
M28W640FST90ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64				Not Qualified	TOP	67108864 bit				e0	NOR TYPE	.000005 Amp		YES	90 ns		NO
M58BW032BB45ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	BOTTOM	33554432 bit			4		NOR TYPE	.0001 Amp		YES	45 ns		NO
M29DW128G70ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K,128K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8		NOR TYPE	.0001 Amp		YES	70 ns		YES
M28W640FST90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	S-PBGA-B64				Not Qualified	TOP	67108864 bit					NOR TYPE	.000005 Amp		YES	90 ns		NO
M58BW032DT45ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	TOP	33554432 bit			4		NOR TYPE	.0001 Amp		YES	45 ns		NO
M28W320FST85ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64				Not Qualified	TOP	33554432 bit					NOR TYPE	.000005 Amp		YES	85 ns		NO
M58BW032BB60ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	BOTTOM	33554432 bit			4		NOR TYPE	.0001 Amp		YES	60 ns		NO
M58BW032BT55ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.6 V	1.7 mm	10 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4		NOR TYPE	.0001 Amp	12 mm	YES	55 ns	3.3	NO
M28W320FSB10ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	33554432 bit				e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M58BW032DT45ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.6 V	1.7 mm	10 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4		NOR TYPE	.0001 Amp	12 mm	YES	45 ns	3.3	NO
M29DW128G70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K,128K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8		NOR TYPE	.0001 Amp		YES	70 ns		YES
M28W640FST10ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64				Not Qualified	TOP	67108864 bit				e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M58BW032DB60ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	BOTTOM	33554432 bit			4		NOR TYPE	.0001 Amp		YES	60 ns		NO
M58BW032BT60ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.6 V	1.7 mm	10 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4		NOR TYPE	.0001 Amp	12 mm	YES	60 ns	3.3	NO
M58BW032DB45ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80				Not Qualified	BOTTOM	33554432 bit			4		NOR TYPE	.0001 Amp		YES	45 ns		NO
NAND256W4A1DZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY					70 Cel	16MX16	16M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V			Not Qualified		268435456 bit	2.7 V			e0					12000 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.