BGA Flash Memory 2,062

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
THGBMNG5D1LBAIT	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			4294967296 words				8	GRID ARRAY						85 Cel			4GX8	4G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V								34359738368 bit	2.7 V						MLC NAND TYPE					2.7
S26KS512SDPBHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY						85 Cel			64MX8	64M	-40 Cel					BOTTOM			R-PBGA-B24	3	1.95 V								536870912 bit	1.7 V										96 ns	1.8
THGBMNG5D1LBAIL	Toshiba	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			4294967296 words				8	GRID ARRAY	BGA153,14X14,20				.5 mm	85 Cel			4GX8	4G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V				11 mm				34359738368 bit	2.7 V								13 mm
THGBMJG6C1LBAU7	Kioxia Holdings	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words				8	GRID ARRAY	BGA153,14X14,20				.5 mm	105 Cel			8GX8	8G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V				11 mm				68719476736 bit	2.7 V								13 mm
THGBMJG6C1LBAIL	Kioxia Holdings	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words				8	GRID ARRAY	BGA153,14X14,20				.5 mm	85 Cel			8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V				11 mm				68719476736 bit	2.7 V								13 mm
EMMC04G-M627-X02U	Kingston Technology Company	FLASH CARD			BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			4294967296 words				8	GRID ARRAY									4GX8	4G						BOTTOM			R-PBGA-B										34359738368 bit							MLC NAND TYPE
EMMC16G-TB29-90F01	Kingston Technology Company	FLASH CARD			BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			17179869184 words				8	GRID ARRAY									16GX8	16G						BOTTOM			R-PBGA-B										137438953472 bit							TLC NAND TYPE
MT29F256G08AUCABH3-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel					-40 Cel	32K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			274877906944 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
PC28F640P30BF65A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			4MX16	4M	-40 Cel	4,63	YES			BOTTOM			S-PBGA-B64							Not Qualified		BOTTOM	67108864 bit			8				NOR TYPE	.000055 Amp		YES	65 ns		NO
MT29F64G08AECABH1-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel			8GX8	8G	-40 Cel	8K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
EMMC04G-W627-X02U	Kingston Technology Company	FLASH CARD	INDUSTRIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			4294967296 words				8	GRID ARRAY						85 Cel			4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B			1 mm			11.5 mm				34359738368 bit							MLC NAND TYPE		13 mm
S26KS256SDPBHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY						85 Cel			32MX8	32M	-40 Cel					BOTTOM			R-PBGA-B24	3	1.95 V								268435456 bit	1.7 V										96 ns	1.8
S28HS02GTFPBHV050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY						105 Cel			2GX1	2G	-40 Cel					BOTTOM			S-PBGA-B24	3	2 V			166 MHz					2147483648 bit	1.7 V						NOR TYPE					1.8
S26KL512SDABHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY						85 Cel			64MX8	64M	-40 Cel					BOTTOM			R-PBGA-B24	3	3.6 V								536870912 bit	2.7 V										96 ns	3
KLM4G1FETE-B041	Samsung	FLASH CARD	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					4294967296 words	1.8			8	GRID ARRAY						85 Cel			4GX8	4G	-25 Cel					BOTTOM			R-PBGA-B										34359738368 bit		3.3V SUPPLY IS ALSO AVAILABLE					NAND TYPE					1.8
THGBMJG7C2LBAU8	Kioxia Holdings	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					17179869184 words				8	GRID ARRAY	BGA153,14X14,20				.5 mm	105 Cel			16GX8	16G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V				11 mm				137438953472 bit	2.7 V								13 mm
MT29F32G08ABCABH1-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel			4GX8	4G	-40 Cel	4K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
THGBMJG8C2LBAIL	Kioxia Holdings	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8	GRID ARRAY	BGA153,14X14,20				.5 mm	85 Cel			32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V				11 mm				274877906944 bit	2.7 V								13 mm
GLS85LS1002P-S-I-FZJE-TT095	Greenliant Systems	FLASH	INDUSTRIAL	145	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY					1 mm	85 Cel			2GX8	2G	-40 Cel					BOTTOM			R-PBGA-B145			1.95 mm			14 mm				17179869184 bit					NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		24 mm			3.3
GLS85LS1064B-M-I-FZJE-ND105	Greenliant Systems	FLASH	INDUSTRIAL	145	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY					1 mm	85 Cel			64GX8	64G	-40 Cel					BOTTOM			R-PBGA-B145			1.95 mm			14 mm				549755813888 bit					NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		24 mm			3.3
MT29F128G08AKCABH2-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel			16GX8	16G	-40 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
GLS85LS1002P-S-I-FZJE	Greenliant Systems	FLASH	INDUSTRIAL	145	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY					1 mm	85 Cel			2GX8	2G	-40 Cel					BOTTOM			R-PBGA-B145			1.95 mm			14 mm				17179869184 bit					NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		24 mm			3.3
GLS85LS1002P-S-I-FZJE-ND104	Greenliant Systems	FLASH	INDUSTRIAL	145	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY					1 mm	85 Cel			2GX8	2G	-40 Cel					BOTTOM			R-PBGA-B145			1.95 mm			14 mm				17179869184 bit					NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		24 mm			3.3
MT29F32G08ABCABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel			4GX8	4G	0 Cel	4K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
THGBMJG8C4LBAU8	Kioxia Holdings	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8	GRID ARRAY	BGA153,14X14,20				.5 mm	105 Cel			32GX8	32G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V				11 mm				274877906944 bit	2.7 V								13 mm
MT29F4G16ABADAH4-AIT:D	Micron Technology	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			16	GRID ARRAY						85 Cel			256MX16	256M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63										4294967296 bit				e1	30	260	SLC NAND TYPE					3.3
S25FS064SAGBHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	BGA24,5X5,40	1		20	1 mm	105 Cel	NO		8MX8	8M	-40 Cel					BOTTOM			R-PBGA-B24	3	2 V	1.2 mm		133 MHz	6 mm		SPI		67108864 bit	1.7 V							.00009 Amp	8 mm			1.8
S25FS064SAGBHB023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	BGA24,5X5,40	1		20	1 mm	105 Cel	NO		8MX8	8M	-40 Cel					BOTTOM			R-PBGA-B24	3	2 V	1.2 mm		133 MHz	6 mm		SPI		67108864 bit	1.7 V							.00009 Amp	8 mm			1.8
SST26WF016BAT-104I/CS	Microchip Technology	FLASH	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			1	GRID ARRAY	BGA8,3X5,23			100	.886 mm	85 Cel		3-STATE	16MX1	16M	-40 Cel					BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B8		1.95 V	.64 mm	100000 Write/Erase Cycles	104 MHz			SPI		16777216 bit	1.65 V						NOR TYPE	.000005 Amp				1.8
FEMC032GTTE7-T14-20	Flexxon Global	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY						85 Cel			32GX8	32G	-40 Cel					BOTTOM			R-PBGA-B153										274877906944 bit							MLC NAND TYPE					3.3
GLS85LS1016P-S-I-FZJE-TT095	Greenliant Systems	FLASH	INDUSTRIAL	145	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY					1 mm	85 Cel			16GX8	16G	-40 Cel					BOTTOM			R-PBGA-B145			1.95 mm			14 mm				137438953472 bit					NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		24 mm			3.3
MT29F64G08AECABH1-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel			8GX8	8G	0 Cel	8K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F8G08ABCBBH1-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel			1GX8	1G	-40 Cel	2K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			8589934592 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
THGBF7G8K4LBATR	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words				8	GRID ARRAY						85 Cel			32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V								274877906944 bit	2.7 V						MLC NAND TYPE					2.7
MT25QU01GBBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			60 mA	134217728 words	1.8		1.8	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel			128MX8	128M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B24				100000 Write/Erase Cycles	133 MHz		Not Qualified	SPI		1073741824 bit							NOR TYPE	.00005 Amp
MT29F16G08ABCCBH1-10:C	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel			2GX8	2G	0 Cel	4K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
PC28F256P30B85F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			16MX16	16M	-40 Cel	4,255	YES			BOTTOM			S-PBGA-B64							Not Qualified		BOTTOM	268435456 bit			4				NOR TYPE	.000115 Amp		YES	85 ns		NO
MT25QU128ABA8E54-0SIT	Micron Technology	FLASH	INDUSTRIAL	15	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY						85 Cel			128MX1	128M	-40 Cel					BOTTOM			S-PBGA-B15		2 V			166 MHz					134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED						1.8
MT29F64G08AECABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel			8GX8	8G	0 Cel	8K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
S28HS02GTFPBHV053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY						105 Cel			2GX1	2G	-40 Cel					BOTTOM			S-PBGA-B24	3	2 V			166 MHz					2147483648 bit	1.7 V						NOR TYPE					1.8
MT29F8G08ADBFAH4-AAT:FTR	Micron Technology	FLASH			BGA	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			1073741824 words				8	GRID ARRAY						105 Cel			1GX8	1G	-40 Cel					BOTTOM			X-PBGA-B										8589934592 bit					NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE
NAND512W3A2DZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	GRID ARRAY						85 Cel			64MX8	64M	-40 Cel					BOTTOM			R-PBGA-B63		3.6 V					Not Qualified			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE				12000 ns	3
PC28F128P30BF65E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			8MX16	8M	-40 Cel	4,127	YES			BOTTOM			S-PBGA-B64							Not Qualified		BOTTOM	134217728 bit			8				NOR TYPE	.000055 Amp		YES	65 ns		NO
S26KS128SDPBHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY						85 Cel			16MX8	16M	-40 Cel					BOTTOM			R-PBGA-B24	3	1.95 V								134217728 bit	1.7 V										96 ns	1.8
S26KS512SDPBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY						105 Cel			64MX8	64M	-40 Cel					BOTTOM			R-PBGA-B24	3	1.95 V								536870912 bit	1.7 V										96 ns	1.8
MX25U6432FBBI02	Macronix	FLASH	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA14,4X6,20	2		20	.5 mm	85 Cel			8MX8	8M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B14		2 V	.45 mm		133 MHz					67108864 bit	1.65 V	64MX1BIT					NOR TYPE	.000005 Amp				1.8
MT29F8G08ADBFAH4-AAT:F	Micron Technology	FLASH	INDUSTRIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY						105 Cel			1GX8	1G	-40 Cel					BOTTOM			X-PBGA-B										8589934592 bit					NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE					1.8
MT25QU512ABB8E56-0SIT	Micron Technology	FLASH	INDUSTRIAL	27	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY						85 Cel			512MX1	512M	-40 Cel					BOTTOM			R-PBGA-B27		2 V			166 MHz					536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE					1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.