BGA Flash Memory 2,062

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

TMS28F800ZB80BL

Texas Instruments

FLASH

COMMERCIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

GRID ARRAY

70 Cel

1MX8

1M

0 Cel

BOTTOM

R-PBGA-B48

5.5 V

Not Qualified

BOTTOM

8388608 bit

4.5 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

80 ns

3

TMS28F800ST70CQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

3 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK

NOR TYPE

100 ns

3

TMS28F800SB70CL

Texas Instruments

FLASH

COMMERCIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

GRID ARRAY

70 Cel

1MX8

1M

0 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

BOTTOM

8388608 bit

3 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK

NOR TYPE

100 ns

3

TMS28F800ZB80CL

Texas Instruments

FLASH

COMMERCIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

GRID ARRAY

70 Cel

1MX8

1M

0 Cel

BOTTOM

R-PBGA-B48

5.5 V

Not Qualified

BOTTOM

8388608 bit

4.5 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

80 ns

3

TMS28F800VB12BQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

BOTTOM

8388608 bit

2.7 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800VB10CL

Texas Instruments

FLASH

COMMERCIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

70 Cel

1MX8

1M

0 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

BOTTOM

8388608 bit

2.7 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

100 ns

3

TMS28F800ZT80CQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

5.5 V

Not Qualified

TOP

8388608 bit

4.5 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

80 ns

3

TMS28F800SB70BQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

BOTTOM

8388608 bit

3 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK

NOR TYPE

100 ns

3

TMS28F800EB70CE

Texas Instruments

FLASH

INDUSTRIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

85 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

BOTTOM

8388608 bit

2.7 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK

NOR TYPE

100 ns

3

TMS28F800LT12CQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

3 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800VT12CL

Texas Instruments

FLASH

COMMERCIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

70 Cel

1MX8

1M

0 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

2.7 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800ZB70BL

Texas Instruments

FLASH

COMMERCIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

GRID ARRAY

70 Cel

1MX8

1M

0 Cel

BOTTOM

R-PBGA-B48

5.5 V

Not Qualified

BOTTOM

8388608 bit

4.5 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

70 ns

3

TMS28F800ZB70BQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

5.5 V

Not Qualified

BOTTOM

8388608 bit

4.5 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

70 ns

3

TMS28F800ZB70CQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

5.5 V

Not Qualified

BOTTOM

8388608 bit

4.5 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

70 ns

3

TMS28F800EB80CQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

BOTTOM

8388608 bit

2.7 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800LT12CE

Texas Instruments

FLASH

INDUSTRIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

GRID ARRAY

85 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

3 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800VT10CE

Texas Instruments

FLASH

INDUSTRIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

85 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

2.7 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

100 ns

3

TMS28F800ST80BL

Texas Instruments

FLASH

COMMERCIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

GRID ARRAY

70 Cel

1MX8

1M

0 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

3 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800EB80BL

Texas Instruments

FLASH

COMMERCIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

70 Cel

1MX8

1M

0 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

BOTTOM

8388608 bit

2.7 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800VB12CL

Texas Instruments

FLASH

COMMERCIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

70 Cel

1MX8

1M

0 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

BOTTOM

8388608 bit

2.7 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800LT12BQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

3 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800VT12CQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

2.7 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800ZT80CL

Texas Instruments

FLASH

COMMERCIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

GRID ARRAY

70 Cel

1MX8

1M

0 Cel

BOTTOM

R-PBGA-B48

5.5 V

Not Qualified

TOP

8388608 bit

4.5 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

80 ns

3

TMS28F800ST80CQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

3 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800ZT70CQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

5.5 V

Not Qualified

TOP

8388608 bit

4.5 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

70 ns

3

TMS28F800SB80CQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

BOTTOM

8388608 bit

3 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800VB12CQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

BOTTOM

8388608 bit

2.7 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800ET80CL

Texas Instruments

FLASH

COMMERCIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

70 Cel

1MX8

1M

0 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

2.7 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK

NOR TYPE

120 ns

3

TMS28F800ET70CQ

Texas Instruments

FLASH

AUTOMOTIVE

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

125 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

2.7 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK

NOR TYPE

100 ns

3

TMS28F800ET70CE

Texas Instruments

FLASH

INDUSTRIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

GRID ARRAY

85 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

8388608 bit

2.7 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK

NOR TYPE

100 ns

3

LE28FW4203F-70TE

Onsemi

FLASH

INDUSTRIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

35 mA

262144 words

3

YES

3/3.3

16

GRID ARRAY

BGA48(UNSPEC)

8

Flash Memories

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

TOP

4194304 bit

2.7 V

IT ALSO OPERATES AT 0 TO 70 DEG CENTIGRADE OPERATING TEMPERATURE (ERASE / PROGRAM OPERATION)

NOR TYPE

.00001 Amp

YES

70 ns

2.7

YES

LE28FW4203F-70BE

Onsemi

FLASH

INDUSTRIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

35 mA

262144 words

3

YES

3/3.3

16

GRID ARRAY

BGA48(UNSPEC)

8

Flash Memories

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

BOTTOM

4194304 bit

2.7 V

IT ALSO OPERATES AT 0 TO 70 DEG CENTIGRADE OPERATING TEMPERATURE (ERASE / PROGRAM OPERATION)

NOR TYPE

.00001 Amp

YES

70 ns

2.7

YES

M28W320FSB90ZA6T

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

20 mA

2097152 words

NO

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

Tin/Lead (Sn/Pb)

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

33554432 bit

e0

NOR TYPE

.000005 Amp

YES

90 ns

NO

M28W320FSB10ZA6F

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

20 mA

2097152 words

NO

1.8/3.3,3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

33554432 bit

NOR TYPE

.000005 Amp

YES

100 ns

NO

M28W320FST90ZA6F

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

20 mA

2097152 words

NO

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

BOTTOM

S-PBGA-B64

Not Qualified

TOP

33554432 bit

NOR TYPE

.000005 Amp

YES

90 ns

NO

M58BW032BT60ZA6

STMicroelectronics

FLASH

INDUSTRIAL

80

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,2K,16K

1048576 words

3.3

NO

3.3

32

GRID ARRAY

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

1MX32

1M

-40 Cel

4,8,62

YES

BOTTOM

R-PBGA-B80

Not Qualified

TOP

33554432 bit

4

NOR TYPE

.0001 Amp

YES

60 ns

NO

M58BW032DB55ZA3

STMicroelectronics

FLASH

AUTOMOTIVE

80

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,2K,16K

1048576 words

3.3

NO

3.3

32

GRID ARRAY

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

1MX32

1M

-40 Cel

4,8,62

YES

BOTTOM

R-PBGA-B80

Not Qualified

BOTTOM

33554432 bit

4

NOR TYPE

.0001 Amp

YES

55 ns

NO

M28W320FST10ZA6E

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

20 mA

2097152 words

NO

1.8/3.3,3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

BOTTOM

S-PBGA-B64

Not Qualified

TOP

33554432 bit

NOR TYPE

.000005 Amp

YES

100 ns

NO

M28W320FSB85ZA6E

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

20 mA

2097152 words

NO

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

33554432 bit

NOR TYPE

.000005 Amp

YES

85 ns

NO

M29W128FL60ZA6

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

64K

20 mA

8388608 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

8MX16

8M

-40 Cel

256

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

134217728 bit

8/16

NOR TYPE

.0001 Amp

YES

60 ns

YES

M58BW032BB60ZA6T

STMicroelectronics

FLASH

INDUSTRIAL

80

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4K,2K,16K

1048576 words

3.3

NO

3.3

32

GRID ARRAY

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

1MX32

1M

-40 Cel

4,8,62

YES

BOTTOM

R-PBGA-B80

3.6 V

1.7 mm

10 mm

Not Qualified

BOTTOM

33554432 bit

3 V

SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK

4

NOR TYPE

.0001 Amp

12 mm

YES

60 ns

3.3

NO

M29W128GH60ZA6F

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

20 mA

8388608 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

8MX16

8M

-40 Cel

128

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

134217728 bit

8/16

NOR TYPE

.0001 Amp

YES

60 ns

YES

M29DW128G70ZA6F

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

32K,128K

15 mA

8388608 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

8MX16

8M

-40 Cel

8,62

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM/TOP

134217728 bit

8

NOR TYPE

.0001 Amp

YES

70 ns

YES

M28W320FST90ZA6

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

20 mA

2097152 words

NO

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

Tin/Lead (Sn/Pb)

BOTTOM

S-PBGA-B64

Not Qualified

TOP

33554432 bit

e0

NOR TYPE

.000005 Amp

YES

90 ns

NO

M29W128FL70ZA6

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

64K

20 mA

8388608 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

8MX16

8M

-40 Cel

256

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

134217728 bit

8/16

NOR TYPE

.0001 Amp

YES

70 ns

YES

M28W640FSB10ZA6T

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

20 mA

4194304 words

NO

1.8/3.3,3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

Tin/Lead (Sn/Pb)

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

67108864 bit

e0

NOR TYPE

.000005 Amp

YES

100 ns

NO

M58BW032DB60ZA3

STMicroelectronics

FLASH

AUTOMOTIVE

80

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,2K,16K

1048576 words

3.3

NO

3.3

32

GRID ARRAY

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

1MX32

1M

-40 Cel

4,8,62

YES

BOTTOM

R-PBGA-B80

Not Qualified

BOTTOM

33554432 bit

4

NOR TYPE

.0001 Amp

YES

60 ns

NO

M28W640FSB85ZA6

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

20 mA

4194304 words

NO

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

Tin/Lead (Sn/Pb)

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

67108864 bit

e0

NOR TYPE

.000005 Amp

YES

85 ns

NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.