DIP Flash Memory 1,202

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F010B90P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	8	YES	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V		e3	NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
M29F040B90P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		512KX8	512K	-40 Cel	8	YES	Matte Tin (Sn)	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		4194304 bit	4.5 V		e3	NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
M28F512-15B6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V	10K ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp	41.91 mm	15 ns	12	NO
M28F256-90XB1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.75 V		e0	NOR TYPE	.0001 Amp	41.91 mm	90 ns	12	NO
M28F512-90B1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		524288 bit	4.5 V			NOR TYPE		41.91 mm	90 ns	12
M29F002BNT45P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e3	NOR TYPE	.0001 Amp	41.91 mm	45 ns	5	YES
M28F1001-15B313	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-PDIP-T32	5.5 V			15.24 mm	Not Qualified		1048576 bit	4.5 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE			150 ns	12
M28F512-90B1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V		e0	NOR TYPE	.0001 Amp	41.91 mm	90 ns	12	NO
M29F040B55P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		512KX8	512K	-40 Cel	8	YES	Matte Tin (Sn)	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		4194304 bit	4.5 V		e3	NOR TYPE	.0001 Amp	41.91 mm	55 ns	5	YES
M28F512-10XB3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.75 V		e0	NOR TYPE	.0001 Amp	41.91 mm	10 ns	12	NO
M29F040-90XP3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		64K	60 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		512KX8	512K	-40 Cel	8	YES	TIN LEAD	DUAL	R-PDIP-T32			100000 Write/Erase Cycles		Not Qualified		4194304 bit			e0	NOR TYPE	.0001 Amp		90 ns		YES
M28F256-12XB6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.75 V		e0	NOR TYPE	.0001 Amp	41.91 mm	120 ns	12	NO
M28F151B-90P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			196608 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	192KX8	192K	0 Cel				DUAL	R-PDIP-T32	5.5 V	4.83 mm		15.24 mm	Not Qualified	BOTTOM	1572864 bit	4.5 V			NOR TYPE		41.91 mm	90 ns	12
M28F256-10B1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE			20	2.54 mm	70 Cel		32KX8	32K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	4.5 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES		NOR TYPE		41.91 mm	100 ns	12
M28F256-10B312	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDIP-T32	5.5 V			15.24 mm	Not Qualified		262144 bit	4.5 V	100 ERASE/PROGRAM CYCLES		NOR TYPE			100 ns	12
M29F040-120P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		64K	60 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		512KX8	512K	0 Cel	8	YES	TIN LEAD	DUAL	R-PDIP-T32			100000 Write/Erase Cycles		Not Qualified		4194304 bit			e0	NOR TYPE	.0001 Amp		120 ns		YES
M28F101-12XP1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.75 V	BULK ERASE	e0	NOR TYPE	.0001 Amp	41.91 mm	120 ns	12	NO
M28F512-90B3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V		e0	NOR TYPE	.0001 Amp	41.91 mm	90 ns	12	NO
M28F512-20B6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE				2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		524288 bit	4.5 V			NOR TYPE		41.91 mm	20 ns	12
M28F512-20XB1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel				DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		524288 bit	4.75 V			NOR TYPE		41.91 mm	20 ns	12
M28F256-10B1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	20	2.54 mm	70 Cel		32KX8	32K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.5 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp	41.91 mm	100 ns	12	NO
M28F101-90XP3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.75 V		e0	NOR TYPE	.00005 Amp	41.91 mm	90 ns	12	NO
M29F040-70XP1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		64K	60 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		512KX8	512K	0 Cel	8	YES	TIN LEAD	DUAL	R-PDIP-T32			100000 Write/Erase Cycles		Not Qualified		4194304 bit			e0	NOR TYPE	.0001 Amp		70 ns		YES
M28F101-100XP1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.75 V		e0	NOR TYPE	.00005 Amp	41.91 mm	100 ns	12	NO
M28F201-200P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		256KX8	256K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		2097152 bit	4.5 V		e0	NOR TYPE	.0001 Amp	41.91 mm	200 ns	12	NO
M29F002BNB70P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e3	NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
M29F002BNB120P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e3	NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
M28F512-12XB1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel				DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		524288 bit	4.75 V			NOR TYPE		41.91 mm	12 ns	12
M28F256-10B3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	20	2.54 mm	125 Cel		32KX8	32K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.5 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp	41.91 mm	100 ns	12	NO
M29F002BNB120P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e3	NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
M28F256-90XB3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	4.75 V			NOR TYPE		41.91 mm	90 ns	12
M28F512-15B113	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL			50 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32			1000 Write/Erase Cycles		Not Qualified		524288 bit			e0	NOR TYPE	.0001 Amp		150 ns		NO
M29F010B45P1T	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V			NOR TYPE		41.91 mm	45 ns	5
M29F040B55P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		512KX8	512K	0 Cel	8	YES	Matte Tin (Sn)	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		4194304 bit	4.5 V		e3	NOR TYPE	.0001 Amp	41.91 mm	55 ns	5	YES
M29F002BB55P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e3	NOR TYPE	.0001 Amp	41.91 mm	55 ns	5	YES
M28F512-12XB1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.75 V		e0	NOR TYPE	.0001 Amp	41.91 mm	12 ns	12	NO
M28F256-15B312	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDIP-T32	5.5 V			15.24 mm	Not Qualified		262144 bit	4.5 V	100 ERASE/PROGRAM CYCLES		NOR TYPE			150 ns	12
M28F256-20XB6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.75 V		e0	NOR TYPE	.0001 Amp	41.91 mm	200 ns	12	NO
M28F101-120P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V		e0	NOR TYPE	.00005 Amp	41.91 mm	120 ns	12	NO
M28F256-12B3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.5 V		e0	NOR TYPE	.0001 Amp	41.91 mm	120 ns	12	NO
M28F1001-12XB113	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel				DUAL	R-PDIP-T32	5.25 V			15.24 mm	Not Qualified		1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE			120 ns	12
M29F002B-120XP1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			262144 words	5			8	IN-LINE			20	2.54 mm	70 Cel		256KX8	256K	0 Cel				DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.75 V	20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		NOR TYPE		41.91 mm	120 ns	5
M28F256-10B314	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDIP-T32	5.5 V			15.24 mm	Not Qualified		262144 bit	4.5 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE			100 ns	12
M29F002BB55P1T	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			262144 words	5			8	IN-LINE				2.54 mm	70 Cel		256KX8	256K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		NOR TYPE		41.91 mm	55 ns	5
M28F256-15XB6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.75 V		e0	NOR TYPE	.0001 Amp	41.91 mm	150 ns	12	NO
M28F256-20B6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.5 V		e0	NOR TYPE	.0001 Amp	41.91 mm	200 ns	12	NO
M28F512-20XB1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.75 V		e0	NOR TYPE	.0001 Amp	41.91 mm	20 ns	12	NO
M28F256-20XB314	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDIP-T32	5.25 V			15.24 mm	Not Qualified		262144 bit	4.75 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE			200 ns	12

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.