DIP Flash Memory 1,202

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F512-12B613	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL			50 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32			1000 Write/Erase Cycles		Not Qualified		524288 bit			e0	NOR TYPE	.0001 Amp		120 ns		NO
M28F101BP	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V			NOR TYPE		41.91 mm	60 ns	12
M29F002BNT70P1T	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			262144 words	5			8	IN-LINE				2.54 mm	70 Cel		256KX8	256K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		NOR TYPE		41.91 mm	70 ns	5
M28F101-200P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V		e0	NOR TYPE	.00005 Amp	41.91 mm	200 ns	12	NO
M29F002BT120P3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			262144 words	5			8	IN-LINE				2.54 mm	125 Cel		256KX8	256K	-40 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		NOR TYPE		41.91 mm	70 ns	5
M29F040B45P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		512KX8	512K	-40 Cel	8	YES	Matte Tin (Sn)	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		4194304 bit	4.5 V		e3	NOR TYPE	.0001 Amp	41.91 mm	45 ns	5	YES
M28F256-12XB114	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL	R-PDIP-T32	5.25 V			15.24 mm	Not Qualified		262144 bit	4.75 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE			120 ns	12
M29F002BNB120P6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e3	NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
M28F151B-150P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			196608 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	192KX8	192K	0 Cel				DUAL	R-PDIP-T32	5.5 V	4.83 mm		15.24 mm	Not Qualified	BOTTOM	1572864 bit	4.5 V			NOR TYPE		41.91 mm	150 ns	12
M29F002BT70P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e3	NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
M29F040B45P3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words	5			8	IN-LINE				2.54 mm	125 Cel		512KX8	512K	-40 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		4194304 bit	4.5 V			NOR TYPE		41.91 mm	45 ns	5
M29F002B-90XP1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			262144 words	5			8	IN-LINE			20	2.54 mm	70 Cel		256KX8	256K	0 Cel				DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.75 V	20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		NOR TYPE		41.91 mm	90 ns	5
M29F002BB120P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e3	NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
M29F010B55P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		16K	20 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	8	YES	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32			100000 Write/Erase Cycles		Not Qualified		1048576 bit			e0	NOR TYPE	.0001 Amp		55 ns		YES
M29F010B45P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	8	YES	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V		e3	NOR TYPE	.0001 Amp	41.91 mm	45 ns	5	YES
M28F1001-20B312	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-PDIP-T32	5.5 V			15.24 mm	Not Qualified		1048576 bit	4.5 V	100 ERASE/PROGRAM CYCLES		NOR TYPE			200 ns	12
M28F1001-15B114	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V		10000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	10000 ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp		150 ns	12	NO
M28F256-90B6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.5 V		e0	NOR TYPE	.0001 Amp	41.91 mm	90 ns	12	NO
M28F512-10B3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		524288 bit	4.5 V			NOR TYPE		41.91 mm	10 ns	12
M28F256-10XB1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		32KX8	32K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.75 V	BULK ERASE	e0	NOR TYPE	.0001 Amp	41.91 mm	100 ns	12	NO
M28F1001-12B314	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-PDIP-T32	5.5 V			15.24 mm	Not Qualified		1048576 bit	4.5 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE			120 ns	12
M28F512-15B3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V	10K ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp	41.91 mm	15 ns	12	NO
M28F512-20B6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V		e0	NOR TYPE	.0001 Amp	41.91 mm	20 ns	12	NO
M28F102-12XP3	STMicroelectronics	FLASH	AUTOMOTIVE	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories		2.54 mm	125 Cel		64KX16	64K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T40	5.25 V			15.24 mm	Not Qualified		1048576 bit	4.75 V	BULK ERASE	e0	NOR TYPE	.0001 Amp	52.18 mm	120 ns	12	NO
M29F040-150XP3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		64K	60 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		512KX8	512K	-40 Cel	8	YES	TIN LEAD	DUAL	R-PDIP-T32			100000 Write/Erase Cycles		Not Qualified		4194304 bit			e0	NOR TYPE	.0001 Amp		150 ns		YES
M28F256-20XB1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	4.75 V			NOR TYPE		41.91 mm	200 ns	12
M28F1001-12XB313	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-PDIP-T32	5.25 V			15.24 mm	Not Qualified		1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE			120 ns	12
M29F002T-70XP6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			262144 words	5			8	IN-LINE				2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel				DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified	TOP	2097152 bit	4.75 V	TOP BOOT BLOCK		NOR TYPE		41.91 mm	70 ns	5
M29F002BB55P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e3	NOR TYPE	.0001 Amp	41.91 mm	55 ns	5	YES
M29F040-120XP5	STMicroelectronics	FLASH	OTHER	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		64K	60 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		512KX8	512K	-20 Cel	8	YES	TIN LEAD	DUAL	R-PDIP-T32			100000 Write/Erase Cycles		Not Qualified		4194304 bit			e0	NOR TYPE	.0001 Amp		120 ns		YES
M28F256-10B114	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V		10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.5 V	10000 ERASE/PROGRAM CYCLES	e0	NOR TYPE	.0001 Amp		100 ns	12	NO
M28F512-10XB112	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL			50 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32			100 Write/Erase Cycles		Not Qualified		524288 bit			e0	NOR TYPE	.0001 Amp		100 ns		NO
M28F1001-12XB112	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel				DUAL	R-PDIP-T32	5.25 V			15.24 mm	Not Qualified		1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES		NOR TYPE			120 ns	12
M29F002BB90P1T	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			262144 words	5			8	IN-LINE				2.54 mm	70 Cel		256KX8	256K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		NOR TYPE		41.91 mm	70 ns	5
M28F256-20XB3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.75 V		e0	NOR TYPE	.0001 Amp	41.91 mm	200 ns	12	NO
M28F256-12XB112	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL	R-PDIP-T32	5.25 V			15.24 mm	Not Qualified		262144 bit	4.75 V	100 ERASE/PROGRAM CYCLES		NOR TYPE			120 ns	12
M29F010B45P3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel		128KX8	128K	-40 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V			NOR TYPE		41.91 mm	45 ns	5
M28F1001-20XB313	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel				DUAL	R-PDIP-T32	5.25 V			15.24 mm	Not Qualified		1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE			200 ns	12
M28F256-20B1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES		NOR TYPE		41.91 mm	200 ns	12
M28F512-20B3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V		e0	NOR TYPE	.0001 Amp	41.91 mm	20 ns	12	NO
M28F101P	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V			NOR TYPE		41.91 mm	120 ns	12
M28F512B	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE				2.54 mm	70 Cel		64KX8	64K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		524288 bit	4.5 V			NOR TYPE		41.91 mm	120 ns	12
M28F201-150P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		256KX8	256K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		2097152 bit	4.5 V		e0	NOR TYPE	.0001 Amp	41.91 mm	150 ns	12	NO
M28F101-200XP1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.75 V		e0	NOR TYPE	.00005 Amp	41.91 mm	200 ns	12	NO
M28F256-15XB114	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL	R-PDIP-T32	5.25 V			15.24 mm	Not Qualified		262144 bit	4.75 V	10000 ERASE/PROGRAM CYCLES		NOR TYPE			150 ns	12
M28F512-12B1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		524288 bit	4.5 V	10K ERASE/PROGRAM CYCLES		NOR TYPE		41.91 mm	12 ns	12
M28F512-12XB3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel				DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		524288 bit	4.75 V	BULK ERASE		NOR TYPE		41.91 mm	12 ns	12
M28F512-90XB3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE				2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel				DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		524288 bit	4.75 V			NOR TYPE		41.91 mm	90 ns	12

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.