DIP Flash Memory 1,202

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F256-12B6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified				262144 bit	4.5 V	BULK ERASE		e0			NOR TYPE	.0001 Amp	41.91 mm	120 ns	12	NO
M28F512-10XB6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL		R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.75 V			e0			NOR TYPE	.0001 Amp	41.91 mm	10 ns	12	NO
M29F010B55P6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		16K	20 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel			128KX8	128K	-40 Cel	8	YES	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32			100000 Write/Erase Cycles			Not Qualified				1048576 bit				e0			NOR TYPE	.0001 Amp		55 ns		YES
M28F1001-10B313	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel				DUAL		R-PDIP-T32	5.5 V				15.24 mm	Not Qualified				1048576 bit	4.5 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE			100 ns	12
M29F002BT90P6T	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			262144 words	5			8	IN-LINE				2.54 mm	85 Cel			256KX8	256K	-40 Cel				DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified			TOP	2097152 bit	4.5 V	TOP BOOT BLOCK					NOR TYPE		41.91 mm	70 ns	5
M28V101BP	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	3.3			8	IN-LINE				2.54 mm	70 Cel			128KX8	128K	0 Cel				DUAL		R-PDIP-T32	3.6 V	5.08 mm			15.24 mm	Not Qualified				1048576 bit	3 V						NOR TYPE		41.91 mm	150 ns	12
M28F1001-20XB312	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel				DUAL		R-PDIP-T32	5.25 V				15.24 mm	Not Qualified				1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES					NOR TYPE			200 ns	12
M28F1001-15B314	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel				DUAL		R-PDIP-T32	5.5 V				15.24 mm	Not Qualified				1048576 bit	4.5 V	10000 ERASE/PROGRAM CYCLES					NOR TYPE			150 ns	12
M28F512-15B3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE				2.54 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel				DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified				524288 bit	4.5 V	10K ERASE/PROGRAM CYCLES					NOR TYPE		41.91 mm	15 ns	12
M28F512-15B613	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL			50 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel			64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL		R-PDIP-T32			1000 Write/Erase Cycles			Not Qualified				524288 bit				e0			NOR TYPE	.0001 Amp		150 ns		NO
M29F040-90P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		64K	60 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel			512KX8	512K	-40 Cel	8	YES	TIN LEAD	DUAL		R-PDIP-T32			100000 Write/Erase Cycles			Not Qualified				4194304 bit				e0			NOR TYPE	.0001 Amp		90 ns		YES
M28F101-90P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel		YES	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V			e0			NOR TYPE	.00005 Amp	41.91 mm	90 ns	12	NO
M29F040B70P1T	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words	5			8	IN-LINE				2.54 mm	70 Cel			512KX8	512K	0 Cel				DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified				4194304 bit	4.5 V						NOR TYPE		41.91 mm	70 ns	5
M28F512-12XB6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE				2.54 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel				DUAL		R-PDIP-T32	5.25 V	5.08 mm			15.24 mm	Not Qualified				524288 bit	4.75 V	BULK ERASE					NOR TYPE		41.91 mm	12 ns	12
M28F101-90P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V			e0			NOR TYPE	.00005 Amp	41.91 mm	90 ns	12	NO
M28F101-200P6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V			e0			NOR TYPE	.00005 Amp	41.91 mm	200 ns	12	NO
M28F512-20B112	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL			50 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel			64KX8	64K	0 Cel		YES	TIN LEAD	DUAL		R-PDIP-T32			100 Write/Erase Cycles			Not Qualified				524288 bit				e0			NOR TYPE	.0001 Amp		200 ns		NO
TC58F1001P-20	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		4K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel			128KX8	128K	0 Cel	32	YES	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32						Not Qualified				1048576 bit				e0			NOR TYPE	.0001 Amp		200 ns		NO
TC58F1001P-15	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		4K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel			128KX8	128K	0 Cel	32	YES	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32						Not Qualified				1048576 bit				e0			NOR TYPE	.0001 Amp		150 ns		NO
TC58F1000P-15	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel	32	YES	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	42 mm	150 ns	12	NO
TC58F4000P-12	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words	5			8	IN-LINE				2.54 mm	70 Cel		3-STATE	512KX8	512K	0 Cel			TIN LEAD	DUAL		R-PDIP-T32	5.25 V	4.8 mm			15.24 mm	Not Qualified				4194304 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		42 mm	120 ns	12
TC58F4000P-15	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words	5			8	IN-LINE				2.54 mm	70 Cel		3-STATE	512KX8	512K	0 Cel			TIN LEAD	DUAL		R-PDIP-T32	5.25 V	4.8 mm			15.24 mm	Not Qualified				4194304 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		42 mm	150 ns	12
TC58F010P-12	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel			TIN LEAD	DUAL		R-PDIP-T32	5.25 V	4.8 mm			15.24 mm	Not Qualified				1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		42 mm	120 ns	12
TC58F1000P-20	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel	32	YES	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	42 mm	150 ns	12	NO
TC58F010P-10	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel			TIN LEAD	DUAL		R-PDIP-T32	5.25 V	4.8 mm			15.24 mm	Not Qualified				1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		42 mm	100 ns	12
KM29C010-09	Samsung	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel		NO	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms			1048576 bit	4.5 V		128	e0				.0001 Amp	42.035 mm	90 ns	5	YES
KM29C010-15	Samsung	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel		NO	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms			1048576 bit	4.5 V		128	e0				.0001 Amp	42.035 mm	150 ns	5	YES
KM29C010-20	Samsung	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		60 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	10	2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel		NO	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms			1048576 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	128	e0				.0001 Amp	42.035 mm	200 ns	5	YES
KM29C010-10	Samsung	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel		NO	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms			1048576 bit	4.5 V		128	e0				.0001 Amp	42.035 mm	100 ns	5	YES
KM29C010-12	Samsung	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel		NO	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms			1048576 bit	4.5 V		128	e0				.0001 Amp	42.035 mm	120 ns	5	YES
M25P16SVBA6P	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			15 mA	2097152 words			3/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel			2MX8	2M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			100000 Write/Erase Cycles	25 MHz		Not Qualified		SPI		16777216 bit							NOR TYPE	.00001 Amp
M25PX80SOVBA6P	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			15 mA	1048576 words			2.5/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		8388608 bit							NOR TYPE	.00001 Amp
M25P80S-VBA6P	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		15 mA	1048576 words			3/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel	NO		1MX8	1M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	3.6 V	4.8 mm	100000 Write/Erase Cycles	75 MHz	7.62 mm	Not Qualified		SPI		8388608 bit	2.7 V	TERM PITCH-MIN					NOR TYPE	.00001 Amp	9.1 mm		2.7
M25PX80VBA6G	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			15 mA	1048576 words			2.5/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		8388608 bit							NOR TYPE	.00001 Amp
M25PX80STVBA6G	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			15 mA	1048576 words			2.5/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		8388608 bit							NOR TYPE	.00001 Amp
M25P16-VBA6G	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			15 mA	2097152 words			3/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel			2MX8	2M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			100000 Write/Erase Cycles	25 MHz		Not Qualified		SPI		16777216 bit							NOR TYPE	.00001 Amp
M25P80SVBA6GBA	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			1048576 words				8	IN-LINE				2.54 mm	85 Cel			1MX8	1M	-40 Cel				DUAL		R-PDIP-T8	3.6 V	4.8 mm		75 MHz	7.62 mm					8388608 bit	2.7 V						NOR TYPE		9.2 mm		2.7
M25PX80SVBA6P	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			15 mA	1048576 words			2.5/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		8388608 bit							NOR TYPE	.00001 Amp
M25P16SVBA6G	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			15 mA	2097152 words			3/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel			2MX8	2M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			100000 Write/Erase Cycles	25 MHz		Not Qualified		SPI		16777216 bit							NOR TYPE	.00001 Amp
M25P80SVBA6PBA	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			1048576 words				8	IN-LINE				2.54 mm	85 Cel			1MX8	1M	-40 Cel				DUAL		R-PDIP-T8	3.6 V	4.8 mm		75 MHz	7.62 mm					8388608 bit	2.7 V						NOR TYPE		9.2 mm		2.7
M25P80VBA6PBA	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			1048576 words				8	IN-LINE				2.54 mm	85 Cel			1MX8	1M	-40 Cel				DUAL		R-PDIP-T8	3.6 V	4.8 mm		75 MHz	7.62 mm					8388608 bit	2.7 V						NOR TYPE		9.2 mm		2.7
M25PX80VBA6P	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			15 mA	1048576 words			2.5/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		8388608 bit							NOR TYPE	.00001 Amp
M25P80-VBA6G	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		15 mA	1048576 words			3/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel	NO		1MX8	1M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	3.6 V	4.8 mm	100000 Write/Erase Cycles	75 MHz	7.62 mm	Not Qualified		SPI		8388608 bit	2.7 V	TERM PITCH-MIN					NOR TYPE	.00001 Amp	9.1 mm		2.7
M25P16-VBA6P	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			15 mA	2097152 words			3/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel			2MX8	2M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			100000 Write/Erase Cycles	25 MHz		Not Qualified		SPI		16777216 bit							NOR TYPE	.00001 Amp
M25P80VBA6GBA	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			1048576 words				8	IN-LINE				2.54 mm	85 Cel			1MX8	1M	-40 Cel				DUAL		R-PDIP-T8	3.6 V	4.8 mm		75 MHz	7.62 mm					8388608 bit	2.7 V				30	260	NOR TYPE		9.2 mm		2.7
M25P80S-VBA6G	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		15 mA	1048576 words			3/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel	NO		1MX8	1M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	3.6 V	4.8 mm	100000 Write/Erase Cycles	75 MHz	7.62 mm	Not Qualified		SPI		8388608 bit	2.7 V	TERM PITCH-MIN					NOR TYPE	.00001 Amp	9.1 mm		2.7
M25PX80SOVBA6G	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			15 mA	1048576 words			2.5/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		8388608 bit							NOR TYPE	.00001 Amp
M25PX80STVBA6P	Micron Technology	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			15 mA	1048576 words			2.5/3.3	8	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		8388608 bit							NOR TYPE	.00001 Amp

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.