HVSON Flash Memory 1,776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
IS25LP128F-JKLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		16MX8	16M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		166 MHz	5 mm			134217728 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	3
IS25WP256D-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.85 mm	100000 Write/Erase Cycles	166 MHz	6 mm		SPI	268435456 bit	1.65 V		e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	8 mm	1.8
MX25L1606EZNI-12G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1	Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	86 MHz	5 mm	Not Qualified	SPI	16777216 bit	2.7 V		e3			NOR TYPE	.00002 Amp	6 mm	3
MX25R1635FZNIH0	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	1.8		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		80 MHz	5 mm			16777216 bit	1.65 V	IT IS ALSO CONFIGURED AS 16M X 1		NOT SPECIFIED	NOT SPECIFIED			6 mm	3
MX25V1635FZNI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		80 MHz	5 mm			16777216 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 16M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			6 mm	3
N25Q256A13EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	268435456 bit	2.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE		30	260	NOR TYPE	.0001 Amp	8 mm	3
SST25PF040CT-40V/NP	Microchip Technology	FLASH	INDUSTRIAL		HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			20	.5 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	40 MHz	2 mm		SPI	4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	3 mm	3.3
SST25VF040B-50-4I-QAF-T	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	4194304 words		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified	SPI	4194304 bit	2.7 V		e4			NOR TYPE	.00003 Amp	6 mm
W25M02GVZEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1073741824 words	3		2	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		1GX2	1G	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	6 mm			2147483648 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm	3
AT45DB161E-MHF-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	26 mA	16777216 words	3	2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	70 MHz	5 mm	Not Qualified	SPI	16777216 bit	2.3 V		e4			NOR TYPE	.00001 Amp	6 mm	2.7
MX25U3235FZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	1.8	1.8	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI	33554432 bit	1.65 V	CAN BE ORGANISED AS 32 MBIT X 1	e3			NOR TYPE	.00002 Amp	6 mm	1.8
MX25U51245GZ4I54	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		4			1.27 mm	85 Cel		64MX8	64M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-N8		2 V	.8 mm		166 MHz	6 mm			536870912 bit	1.65 V	IT CAN ALSO CONFIGURED AS 256M X 2 AND 512M X 1	e3					8 mm	1.8
MX25V4035FZUI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		1MX4	1M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm			4194304 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 4M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			6 mm	3
SST25VF080B-50-4I-QAF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	8388608 words		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified	SPI	8388608 bit	2.7 V		e4			NOR TYPE	.00003 Amp	6 mm
SST26VF064B-104V/MN	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI	67108864 bit	2.7 V		e3			NOR TYPE	.000045 Amp	8 mm	3
AT25SF161B-MHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	108 MHz	5 mm		SPI	16777216 bit	2.7 V					NOR TYPE	.00003 Amp	6 mm	3
AT45DB321E-MWHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		32MX1	32M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-N8	3	3.6 V	1 mm		85 MHz	6 mm			33554432 bit	2.3 V		e4		260			8 mm	3
IS25WP064A-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		8MX8	8M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.85 mm		133 MHz	6 mm			67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	1.8
MX25L12833FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4		20	1.27 mm	85 Cel		16MX8	16M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	134217728 bit	2.7 V	IT CAN ALSO BE CONFIGURED AS 64M X 2 AND 128M X 1	e3			NOR TYPE	.00005 Amp	8 mm	3
MX25L25645GZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-XDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	120 MHz	6 mm		SPI	268435456 bit	2.7 V		e3			NOR TYPE	.00002 Amp	8 mm	3
MX25L3233FZBI-08QTR	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32	4		20	.8 mm	85 Cel		4MX8	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	3 mm		SPI	33554432 bit	2.65 V	16MX2BIT MEMORYCONFIGURATION IS ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	4 mm	3.3
MX25U6435FZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8	1.8	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel		16MX4	16M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI	67108864 bit	1.65 V	CAN BE ORGANISED AS 64 MBIT X 1	e3			NOR TYPE	.00002 Amp	6 mm	1.8
S25FS128SAGNFI101	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	6 mm	1.8
SST25VF080B-50-4C-QAF	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	8388608 words		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	70 Cel	3-STATE	8MX1	8M	0 Cel	NICKEL PALLADIUM GOLD	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified	SPI	8388608 bit	2.7 V		e4			NOR TYPE	.00003 Amp	6 mm
SST26VF064BT-104V/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI	67108864 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm	3
W25Q128FVPIF	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm			134217728 bit	2.7 V					NOR TYPE		6 mm	3
W25Q64FWZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.8 mm		104 MHz	5 mm			67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	1.8
W25R256JVEIQTR	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	45 mA	33554432 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		DUAL		SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V				NOR TYPE	.000025 Amp	8 mm	3
AT45DB081E-MHN-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD	QUAD		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	5 mm	Not Qualified	SPI	8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE	e4			NOR TYPE	.00004 Amp	6 mm	3
AT45DB321E-MWHF-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		32MX1	32M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-N8	3	3.6 V	1 mm		85 MHz	6 mm			33554432 bit	2.3 V		e4		260			8 mm	3
GD25Q80EEIGR	Gigadevice Semiconductor	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	1048576 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			20	.5 mm	85 Cel		1MX8	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.5 mm	100000 Write/Erase Cycles	133 MHz	2 mm		SPI	8388608 bit	3 V	2.7V TO 3V @ 104MHZ				NOR TYPE	.00004 Amp	3 mm	3.3
SST26VF016BT-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI	16777216 bit	2.7 V		e3			NOR TYPE	.000025 Amp	6 mm	3
W25Q80DLZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		80 MHz	5 mm			8388608 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	2.7
W25Q80EWUXIETR	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	1048576 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	85 Cel		1MX8	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm		SPI	8388608 bit	1.65 V					NOR TYPE	.0000075 Amp	3 mm	1.8
W25R256JVEIQ	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL		SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	2.7 V					NOR TYPE	.00012 Amp	8 mm	3
AT25FF161A-MAHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	2 mm		SPI	16777216 bit	1.65 V		e4			NOR TYPE	.00005 Amp	3 mm	1.8
AT25SF321B-MHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	108 MHz	5 mm		SPI	33554432 bit	2.7 V		e4		260	NOR TYPE	.000025 Amp	6 mm	3
AT25XE161D-MAHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	108 MHz	2 mm		SPI	16777216 bit	1.65 V					NOR TYPE	.00005 Amp	3 mm	1.8
AT45DB321D-MU	Atmel	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	1 mm	100000 Write/Erase Cycles	66 MHz	5 mm	Not Qualified	SPI	33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 528 BYTES EACH	e3			NOR TYPE	.00001 Amp	6 mm	2.7
GD25Q16CNIGR	Gigadevice Semiconductor	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32			20	.8 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	120 MHz	3 mm		SPI	16777216 bit	2.7 V					NOR TYPE	.000005 Amp	4 mm	3.3
IS25LQ040B-JKLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		4MX1	4M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm			4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	3
MT25QU128ABA1EW9-0SITTR	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	35 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE	R-PDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	166 MHz	6 mm		SPI	134217728 bit	1.7 V			30	260	NOR TYPE	.00003 Amp	8 mm	1.8
IS25LQ040B-JKLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		4MX1	4M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm			4194304 bit	2.3 V							6 mm	3
N25Q128A13EF740F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified	SPI	134217728 bit	2.7 V			30	260	NOR TYPE	.0001 Amp	6 mm	3
SST26WF016BA-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI	16777216 bit	1.65 V		e3			NOR TYPE	.000005 Amp	6 mm	1.8
SST26WF016BAT-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI	16777216 bit	1.65 V		e3			NOR TYPE	.000005 Amp	6 mm	1.8
W25Q128FVPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI	134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	6 mm	3
AT25EU0021A-MAHN-T	Renesas Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	262144 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	85 MHz	2 mm		SPI	2097152 bit	1.65 V					NOR TYPE	.0000145 Amp	3 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.