HVSON Flash Memory 1,776

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
M25P05-AVZW6G	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	65536 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		Flash Memories		.5 mm	85 Cel		64KX8	64K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	50 MHz	2 mm	Not Qualified		SPI	524288 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	3 mm	2.7
M25PX32SOVMP6E	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	4096 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		4KX8	4K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	15 ms	SPI	32768 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M25P64-VME6	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	8388608 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel	TIN LEAD	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	6 mm	Not Qualified		SPI	67108864 bit	2.7 V		e0			NOR TYPE	.00005 Amp	8 mm	2.7
M25P10-AVMP6T/Y	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI	1048576 bit	2.3 V					NOR TYPE	.000005 Amp	6 mm	2.7
M25P10-AVMP6G/Y	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI	1048576 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	6 mm	2.7
M25PX32-VMP6F	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	4096 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		4KX8	4K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	15 ms	SPI	32768 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M25PX32SOVMP6F	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	4096 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		4KX8	4K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	15 ms	SPI	32768 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M25P10-AVMB6/Y	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		Flash Memories		.5 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	50 MHz	2 mm	Not Qualified		SPI	1048576 bit	2.3 V					NOR TYPE	.000005 Amp	3 mm	2.7
M25P64-VME6T	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	8388608 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel	TIN LEAD	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	6 mm	Not Qualified		SPI	67108864 bit	2.7 V		e0			NOR TYPE	.00005 Amp	8 mm	2.7
M25P05-AVZW6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	65536 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		Flash Memories		.5 mm	85 Cel		64KX8	64K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	50 MHz	2 mm	Not Qualified		SPI	524288 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	3 mm	2.7
M25P10-AVZW6G/Y	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		128KX8	128K	-40 Cel		DUAL		R-XDSO-N8		3.6 V	.6 mm		50 MHz	2 mm	Not Qualified			1048576 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		3 mm	2.7
M25P05-AVZW6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	65536 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		Flash Memories		.5 mm	85 Cel		64KX8	64K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	50 MHz	2 mm	Not Qualified		SPI	524288 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	3 mm	2.7
M25P10-AVMB6G/Y	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		Flash Memories		.5 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	50 MHz	2 mm	Not Qualified		SPI	1048576 bit	2.3 V					NOR TYPE	.000005 Amp	3 mm	2.7
M25PE40-VMP6	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		524288 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		512KX8	512K	-40 Cel	TIN LEAD	DUAL		R-XDSO-N8		3.6 V	1 mm		33 MHz	5 mm	Not Qualified			4194304 bit	2.7 V		e0			NOR TYPE		6 mm	2.7
M25P05-AVZW6P	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	65536 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		Flash Memories		.5 mm	85 Cel		64KX8	64K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	50 MHz	2 mm	Not Qualified		SPI	524288 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	3 mm	2.7
M25P10-AVMB6P/Y	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		Flash Memories		.5 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	50 MHz	2 mm	Not Qualified		SPI	1048576 bit	2.3 V					NOR TYPE	.000005 Amp	3 mm	2.7
M25P10-AVMP6/Y	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI	1048576 bit	2.3 V					NOR TYPE	.000005 Amp	6 mm	2.7
M25P10-AVZW6/Y	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		128KX8	128K	-40 Cel		DUAL		R-XDSO-N8		3.6 V	.6 mm		50 MHz	2 mm	Not Qualified			1048576 bit	2.7 V					NOR TYPE		3 mm	2.7
M25P10-AVZW6P/Y	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		128KX8	128K	-40 Cel		DUAL		R-XDSO-N8		3.6 V	.6 mm		50 MHz	2 mm	Not Qualified			1048576 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		3 mm	2.7
M25PX32STVMP6E	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	4096 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		4KX8	4K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	15 ms	SPI	32768 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
S25FL064LABNFA011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm	3
S25FL256LAGNFI410	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm				268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		8 mm	3
S25FL256LDPNFN413	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		66 MHz	6 mm				268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		8 mm	3
S25HS512TDPNHV010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-XDSO-N8	3	2 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI	536870912 bit	1.7 V		e3			NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TFANHM013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-XDSO-N8	3	2 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI	536870912 bit	1.7 V		e3			NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TFANHM010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-XDSO-N8	3	2 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI	536870912 bit	1.7 V		e3			NOR TYPE	.00034 Amp	8 mm	1.8
S25FL128SAGNFM003	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.8 mm		133 MHz	6 mm				134217728 bit	2.7 V	IT ALSO ORGANIZED AS 128M X 1	e3					8 mm	3
S25FS256SDSNFI000	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			2	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	1.7 V		e3			NOR TYPE	.0003 Amp	8 mm	1.8
S25FL128LAGNFV413	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	105 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm				134217728 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		6 mm	3
S25FL164K0XNFA013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.000008 Amp	6 mm	3
S25FS512SAGNFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	536870912 bit	1.7 V		e3			NOR TYPE	.0001 Amp	8 mm	1.8
S25FL128LAGNFN411	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm				134217728 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		6 mm	3
S25FL256LAGNFI411	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm				268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		8 mm	3
S25HS512TFANHI011	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8		2 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HL512TFANHM010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FS128SDSNFM100	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	6 mm	1.8
S25FS128SAGNFM100	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	6 mm	1.8
S25HS512TDPNHM013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	125 Cel		64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-XDSO-N8	3	2 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI	536870912 bit	1.7 V		e3			NOR TYPE	.00034 Amp	8 mm	1.8
S25FL116K0XNFAQ10	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.85 mm			5 mm				16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						6 mm	3
S25HL512TDPNHI013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPNHB013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FS128SAGNFI103	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	6 mm	1.8
S25FL132K0XNFB011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	105 Cel		8MX4	8M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm				33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						6 mm	3
S25FL132K0XNFA011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		8MX4	8M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm				33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1						6 mm	3
S25FS256SDSNFI003	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			2	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	1.7 V		e3			NOR TYPE	.0003 Amp	8 mm	1.8
S25FL128LDPNFI411	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		66 MHz	5 mm				134217728 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		6 mm	3
S25HS512TFANHB010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-XDSO-N8	3	2 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI	536870912 bit	1.7 V		e3			NOR TYPE	.00034 Amp	8 mm	1.8
S25HL512TFANHB011	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			25	1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL	HARDWARE	R-XDSO-N8		3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.