HVSON Flash Memory 1,776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
IS25WP064A-JKLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	29 mA	8388608 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		67108864 bit	1.65 V		e3	10	260	NOR TYPE	.000035 Amp	6 mm	1.8
IS25WP064A-JKLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		8MX8	8M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.8 mm		133 MHz	5 mm					67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	1.8
MX25L25635FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	67108864 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	10	1.27 mm	85 Cel		64MX4	64M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3			NOR TYPE	.00002 Amp	8 mm	3
MX25R8035FZUIH1	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	1.8		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.5 mm	85 Cel		2MX4	2M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.6 mm		104 MHz	2 mm					8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1		NOT SPECIFIED	NOT SPECIFIED			3 mm	1.8
SST25PF040CT-40I/NP	Microchip Technology	FLASH	INDUSTRIAL		HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			20	.5 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	40 MHz	2 mm			SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	3 mm	3.3
GD25Q80CEIGR	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		8MX1	8M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.5 mm		120 MHz	2 mm					8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			3 mm	3.3
MX25L25635FZ2I-10GTR	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		64MX4	64M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	6 mm					268435456 bit	2.7 V	ALSO HAVING 1-BIT MEMORY WIDTH						8 mm	3
MX25L6433FZNI-08Q	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	17 mA	8388608 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	6 mm	3.3
S25FL064LABNFI043	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL			S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1	e3	30	260			4 mm	3
S25FL127SABNFI101	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.24	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		134217728 bit	2.7 V		e3			NOR TYPE	.0001 Amp	6 mm	3
S25FL256SAGNFV001	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	105 Cel		64MX4	64M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3	30	260	NOR TYPE	.0003 Amp	8 mm	3
SST26WF016BT-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI		16777216 bit	1.65 V		e3			NOR TYPE	.000005 Amp	6 mm	1.8
W25Q128JWEIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm	1.8
W25Q16JLZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm					16777216 bit	2.7 V	IT ALSO OPERATES AT FREQUENCY 50 MHZ AT SUPPLY VOLTAGE 2.3 TO 2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		6 mm	2.7
W25Q64JWZPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	8388608 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	4		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000025 Amp	6 mm	1.8
GD25Q16CWIGR	Gigadevice Semiconductor	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2			20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	120 MHz	5 mm			SPI		16777216 bit	2.7 V					NOR TYPE	.000005 Amp	6 mm	3.3
IS25LP032D-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		4MX8	4M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm					33554432 bit	2.3 V		e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm	3
S25FL116K0XNFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		4MX4	4M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE	.000005 Amp	6 mm	3
SST25PF040C-40E/MF	Microchip Technology	FLASH	AUTOMOTIVE	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	125 Cel	3-STATE	4MX1	4M	-40 Cel		DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm			SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	3 mm	3.3
SST25PF040C-40E/MF18GVAO	Microchip Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	40 MHz	5 mm			SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	6 mm	3.3
SST25PF040C-40I/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm			SPI		4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	3 mm	3.3
SST25PF040C-40V/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm			SPI		4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	3 mm	3.3
SST25PF040C-40V/MF18GVAO	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	40 MHz	5 mm			SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	6 mm	3.3
SST25PF040CT-40E/MF	Microchip Technology	FLASH	AUTOMOTIVE	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	125 Cel	3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm			SPI		4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	3 mm	3.3
SST25PF040CT-40I/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm			SPI		4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	3 mm	3.3
SST25PF040CT-40V/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm			SPI		4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	3 mm	3.3
SST25PF040CT-40V/NP18GVAO	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	40 MHz	2 mm			SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	3 mm	3.3
SST26VF032BAT-104I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	30 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm	3
W25Q32FVZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	6 mm	2.7
W25Q80EWZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	8388608 words	1.8	1.8	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		8388608 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000075 Amp	6 mm	1.8
AT25DN512C-MAHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	18 mA	65536 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm			SPI		524288 bit	2.3 V		e4			NOR TYPE	.000015 Amp	3 mm	3
AT25PE16-MHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	18 mA	16777216 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel		16MX1	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	85 MHz	5 mm			SPI		16777216 bit	2.3 V						.00005 Amp	6 mm	1.8
AT25SF041B-MAHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	18.5 mA	4194304 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	108 MHz	2 mm			SPI		4194304 bit	2.7 V					NOR TYPE	.00003 Amp	3 mm	3
GD25Q64CWIGR	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	8388608 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI		67108864 bit	2.7 V					NOR TYPE	.000005 Amp	6 mm	3.3
IS25LP032D-JKLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		4MX8	4M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm					33554432 bit	2.3 V		e3	NOT SPECIFIED	NOT SPECIFIED			6 mm	3
IS25LP040E-JYLE-TR	Integrated Silicon Solution	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	524288 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm			SPI		4194304 bit	2.3 V					NOR TYPE	.000018 Amp	3 mm	3
IS25LP064A-JKLE1	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	125 Cel		64MX1	64M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm					67108864 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	3
IS25LP080D-JULA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel		1MX8	1M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.6 mm		133 MHz	2 mm					8388608 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			3 mm	3
IS25LQ512B-JULE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		524288 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	105 Cel		512KX1	512K	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.6 mm		104 MHz	2 mm					524288 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			3 mm	3
IS25WP016D-JTLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	2097152 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32	1		20	.8 mm	105 Cel	3-STATE	2MX8	2M	-40 Cel	Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.6 mm	100000 Write/Erase Cycles	133 MHz	3 mm			SPI		16777216 bit	1.65 V		e3			NOR TYPE	.00002 Amp	4 mm	1.8
IS25WP128F-JKLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		16MX8	16M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.8 mm		166 MHz	5 mm					134217728 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	1.8
M25PE40-VMP6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified		SPI		4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M45PE40-VMP6G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	25 ms	SPI		4194304 bit	2.7 V			30	260	NOR TYPE	.00001 Amp	6 mm	2.7
MX25L12845GZ2I-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		120 MHz	6 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MX25L25735FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V	CAN BE ORGNISED AS 256 MBIT X 1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm	3
MX25L3235EZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	35 mA	8388608 words	3.3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V	IT ALSO CONFIGURED AS 32M X 1	e3			NOR TYPE	.00004 Amp	6 mm	2.7
MX25U12832FZ4I02	Macronix	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.65 V					NOR TYPE	.000005 Amp	8 mm	1.8
N25Q032A13EF640E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V			30	260	NOR TYPE	.0001 Amp	6 mm	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.