SOP Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
IS25WP016D-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			8	SMALL OUTLINE		1			1.27 mm	105 Cel		2MX8	2M	-40 Cel					DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm					16777216 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm		1.8
IS25WP064A-RMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	1.8			8	SMALL OUTLINE					1.27 mm	105 Cel		8MX8	8M	-40 Cel					DUAL			R-PDSO-G16		1.95 V	2.65 mm		133 MHz	7.49 mm					67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			10.31 mm		1.8
M25P10-AVMN6	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	131072 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		1048576 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e0			NOR TYPE	.000005 Amp	4.9 mm		2.7
M25P10-AVMN6T	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	131072 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		1048576 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e0			NOR TYPE	.000005 Amp	4.9 mm		2.7
M25P32-VMW6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	20 MHz	5.62 mm	Not Qualified		SPI		33554432 bit	2.7 V		e4			NOR TYPE	.00001 Amp	5.62 mm		2.7
M25P80-VMN3PB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		8MX1	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm		2.7
M25PX16-VMN6P	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	2.7		2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		16777216 bit	2.3 V			30	260	NOR TYPE	.00001 Amp	4.9 mm		3
M25PX16-VMN6TP	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	2.7		2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		16777216 bit	2.3 V		e4			NOR TYPE	.00001 Amp	4.9 mm		3
MX25L12845GMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		104 MHz	7.52 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 MBIT X 1	e3					10.3 mm		3
MX25L6445EM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		3/3.3	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	20	1.27 mm	85 Cel		16MX4	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified	5 ms	SPI		67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1, 20 YEAR DATA RETENTION		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	5.28 mm		3
MX25R1635FM2IH1	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	2.16 mm		80 MHz	5.23 mm					16777216 bit	1.65 V	IT IS ALSO CONFIGURED AS 16M X 1						5.28 mm		3
MX25R3235FM2IL0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		6 mA	4194304 words	1.8			8	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	5.23 mm			SPI		33554432 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000024 Amp	5.28 mm		1.8
MX25R4035FM1IL0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		1MX4	1M	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm					4194304 bit	1.65 V	IT IS ALSO CONFIGURED AS 4M X 1	e3					4.9 mm		3
MX25U12835FMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	1.8		1.8	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	10	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	2 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified		SPI		134217728 bit	1.65 V	CAN BE ORGANISED AS 128 MBIT X 1	e3			NOR TYPE	.00002 Amp	10.3 mm		1.8
MX25V16066M2I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.23 mm			SPI		16777216 bit	2.7 V	ALSO AVAILABLE WITH 2.3VMIN@50MHZ				NOR TYPE	.00002 Amp	5.28 mm		3
MX25V20066M1I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	262144 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel					DUAL		HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		2097152 bit	2.7 V	ALSO AVAILABLE WITH 2.3VMIN@50MHZ				NOR TYPE	.00002 Amp	4.9 mm		3
MX29F800CBMI-70G	Macronix	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN	YES	DUAL			R-PDSO-G44		5.5 V	3 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK	e3			NOR TYPE	.00005 Amp	28.5 mm	70 ns	5	YES
MX35LF2GE4AB-MI	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	268435456 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	10	1.27 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel			MATTE TIN		DUAL		HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified		SPI		2147483648 bit	2.7 V		e3			SLC NAND TYPE	.00005 Amp	10.3 mm		3
N25Q064A13ESED0F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm		2.7
N25Q064A13ESED0G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm		2.7
N25Q128A13ESFH0E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm		3
S25FL032P0XMFA013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.28 mm					33554432 bit	2.7 V		e3					5.28 mm		3
S25FL064P0XMFA000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		26 mA	8388608 words	3			8	SMALL OUTLINE	SOP16,.4			0.2	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm			SPI		67108864 bit	2.7 V		e3			NOR TYPE	.00001 Amp	10.3 mm		3
S25FL127SABMFV103	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3	4	Flash Memories	20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm	Not Qualified		SPI		134217728 bit	2.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm		3
S25FL128LAGMFA000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	10.3 mm		3
S25FL128SAGMFBR00	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	105 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3	30	260			10.3 mm		3
S25FL208K0RMFI011	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	76 MHz	5.283 mm	Not Qualified		SPI		8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	5.283 mm		3
S25FL256SAGMFIG00	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1	e3			NOR TYPE	.0001 Amp	10.3 mm		3
S25FL256SAGMFIG10	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1	e3			NOR TYPE	.0001 Amp	10.3 mm		3
S25FL512SDPMFIG10	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	66 MHz	7.5 mm	Not Qualified		SPI		512753664 bit	2.7 V		e3			NOR TYPE	.0003 Amp	10.3 mm		3
S25FL512SDSMFV010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3			8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	80 MHz	7.5 mm			SPI		512753664 bit	2.7 V		e3			NOR TYPE	.0003 Amp	10.3 mm		3
S25HL01GTFAMHI010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3			8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		128MX8	128M	-40 Cel					DUAL		HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI		1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm		3
SST25VF020B-80-4C-SAE-T	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	2097152 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	4.9 mm
SST25VF032B-50-4C-S2AF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	70 Cel		32MX1	32M	0 Cel			NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8		3.6 V	2.16 mm		50 MHz	5.275 mm	Not Qualified				33554432 bit	2.7 V		e4			NOR TYPE		5.275 mm		2.7
SST25VF032B-66-4I-S2AF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.275 mm	Not Qualified		SPI		33554432 bit	2.7 V		e4			NOR TYPE	.00002 Amp	5.275 mm		2.7
SST25VF032B-66-4I-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	33554432 words			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		32MX1	32M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified		SPI		33554432 bit	2.7 V		e4			NOR TYPE	.00002 Amp	5.275 mm
SST25VF040B-50-4C-SAF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			Matte Tin (Sn)		DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V		e3			NOR TYPE	.00002 Amp	4.9 mm
SST26VF016B-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		16777216 bit	2.7 V		e3	40	260	NOR TYPE	.000025 Amp	5.26 mm		3
SST26VF016BT-104I/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm		3
W25M512JVFIQ	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words				8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.64 mm		104 MHz	7.49 mm					536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		10.31 mm		3
W25Q40CLSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	4194304 words	3		2.5/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified		SPI		4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5.28 mm		3
W25Q64FVSFIG	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words				8	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm		104 MHz	7.49 mm	Not Qualified		SPI		67108864 bit	3 V						.00005 Amp	10.31 mm
W25R256JVFIQ	Winbond Electronics	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL		SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00012 Amp	10.31 mm		3
A25L080O-UF/G	Amic Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	1048576 words	3.3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	100 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	3 V					NOR TYPE	.000025 Amp	4.85 mm		2.7
AM29F800BB-55SC	Spansion	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL			R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.001 Amp	28.2 mm	55 ns	5	YES
AM29F800BB-55SE	Spansion	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		512KX16	512K	-55 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL			R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.001 Amp	28.2 mm	55 ns	5	YES
AM29F800BB-55SI	Spansion	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL			R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.001 Amp	28.2 mm	55 ns	5	YES
AT25DN011-SSHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		1MX1	1M	-40 Cel					DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		104 MHz	3.9 mm					1048576 bit	2.3 V							4.925 mm		3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.