SOP Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
S25FL128LAGMFI011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm		3
S25FL128SAGMFIG03	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3	30	260	NOR TYPE	.0001 Amp	10.3 mm		3
S25FL128SAGMFM003	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3	30	260			10.3 mm		3
S25FL129P0XMFV003	Cypress Semiconductor	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		38 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	105 Cel		16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.3 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm	Not Qualified	50 ms	SPI		134217728 bit	2.7 V		e3	40	260	NOR TYPE	.00001 Amp	10.3 mm		3
S25FL132K0XMFI011	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm			SPI		33554432 bit	2.7 V					NOR TYPE	.000008 Amp	5.28 mm		3
S25FL164K0XMFI003	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e3			NOR TYPE	.000005 Amp	10.3 mm		3
S25FL216K0PMFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	65 MHz	5.283 mm	Not Qualified		SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	5.283 mm		3
S25FL256LAGMFA000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	10.3 mm		3
S25FL256LAGMFM003	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	125 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	10.3 mm		3
S25FL256LDPMFI000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	66 MHz	7.5 mm			SPI		268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	10.3 mm		3
S25FL256SAGMFV011	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	105 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3			NOR TYPE	.0003 Amp	10.3 mm		3
S25FL512SAGMFVG13	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		512753664 bit	2.7 V		e3	30	260	NOR TYPE	.0003 Amp	10.3 mm		3
S25FS064SDSMFN010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8	3	2 V	2.159 mm		80 MHz	5.283 mm					67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1	e3					5.283 mm		1.8
S25FS128SAGMFI101	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm		1.8
S25FS128SAGMFV100	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm		1.8
S70FL01GSAGMFM010	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	125 Cel	3-STATE	128MX8	128M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		1073741824 bit	2.7 V		e3			NOR TYPE		10.3 mm		3
S70FL01GSDSMFB010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	80 MHz	7.5 mm			SPI		1073741824 bit	2.7 V		e3			NOR TYPE		10.3 mm		3
SST26VF016B-80E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	2.5			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		16777216 bit	2.3 V					NOR TYPE	.000025 Amp	4.9 mm		2.5
SST26VF016BT-80E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	2.5			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		16777216 bit	2.3 V					NOR TYPE	.000025 Amp	4.9 mm		2.5
SST25LF020A-33-4I-SAE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	2097152 words	3.3		3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel			Matte Tin (Sn)		DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	3 V		e3	40	260	NOR TYPE	.000015 Amp	4.9 mm		3.3
SST25VF020-20-4C-SAE	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	2097152 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.7 V		e3	40	260	NOR TYPE	.000015 Amp	4.9 mm
SST25VF064C-80-4I-SCE	Microchip Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	64094208 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories		1.27 mm	85 Cel		64MX1	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	1	3.6 V	2.65 mm	100000 Write/Erase Cycles	80 MHz	7.5 mm	Not Qualified		SPI		64094208 bit	2.7 V		e3		260	NOR TYPE	.00002 Amp	10.29 mm		2.7
SST26VF080AT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		8388608 bit	2.7 V			30	260	NOR TYPE	.00002 Amp	4.9 mm		3
SST26VF080AT-80E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	2.5			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	125 Cel	3-STATE	8MX1	8M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		8388608 bit	2.3 V			30	260	NOR TYPE	.00003 Amp	4.9 mm		2.5
TMS28F008ASYB70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE					1.27 mm	70 Cel		512KX16	512K	0 Cel					DUAL			R-PDSO-G44		3.6 V	2.625 mm			13.3 mm				BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						28.2 mm	70 ns	3
TMS29LF800B-120SE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL			R-PDSO-G44				100000 Write/Erase Cycles			Not Qualified			BOTTOM	8388608 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		120 ns		YES
TMS28F800VB10BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	125 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-G44		3.6 V	2.63 mm			13.3 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE		28.2 mm	100 ns	3
TMS28F004AMT60CDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL			R-PDSO-G44		5.5 V	2.63 mm			13.3 mm	Not Qualified			TOP	4194304 bit	3 V					NOR TYPE		28.2 mm	60 ns	12
TMS28F200AFB60BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL			R-PDSO-G44		5.5 V	2.63 mm	10000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	CAN BE CONFG AS 128K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	60 ns	5	NO
TMS28F800ASYB80BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-G44		3.6 V	2.625 mm			13.3 mm				BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						28.2 mm	80 ns	3
TMS28F400AMB60BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES			DUAL			R-PDSO-G44		3.6 V	2.63 mm	10000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	4194304 bit	3 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	28.2 mm	110 ns	12	NO
TMS28F008ASYB80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE					1.27 mm	125 Cel		512KX16	512K	-40 Cel					DUAL			R-PDSO-G44		3.6 V	2.625 mm			13.3 mm				BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						28.2 mm	80 ns	3
TMS28F800AVB-120BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-G44		3.6 V	2.63 mm			13.3 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE		28.2 mm	120 ns	3
TMS28F400BZB-80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES			DUAL			R-PDSO-G44		5.5 V	2.63 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK				NOR TYPE	.000008 Amp	28.2 mm	80 ns	12	NO
TMS28F008AEYT12BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE					1.27 mm	85 Cel		512KX16	512K	-40 Cel					DUAL			R-PDSO-G44		5.5 V	2.625 mm			13.3 mm				TOP	8388608 bit	4.5 V	TOP BOOT BLOCK						28.2 mm	120 ns	5
TMS28F800AVYB80BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	70 Cel		1MX8	1M	0 Cel					DUAL			R-PDSO-G44		3.6 V	2.625 mm			13.3 mm				BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						28.2 mm	80 ns	3
TMS28F400ASB60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES			DUAL			R-PDSO-G44		3.6 V	2.63 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	4194304 bit	3 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	110 ns	5	NO
TMS28F800EB70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	70 Cel		1MX8	1M	0 Cel					DUAL			R-PDSO-G44		3.6 V	2.63 mm			13.3 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE		28.2 mm	100 ns	3
TMS28F800AZYB12CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-G44		5.5 V	2.625 mm			13.3 mm				BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK						28.2 mm	120 ns	5
TMS28F800AEB-70BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		1MX8	1M	-40 Cel	1,2,1,7	YES			DUAL			R-PDSO-G44		3.6 V	2.63 mm	10000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE	.000008 Amp	28.2 mm	100 ns	3	NO
TMS28F200AEB80BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL			R-PDSO-G44		3.6 V	2.63 mm	10000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	2097152 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	150 ns	5	NO
TMS28F400AET70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES			DUAL			R-PDSO-G44		3.6 V	2.63 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			TOP	4194304 bit	2.7 V	CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	130 ns	5	NO
TMS28F004AFT60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE					1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel					DUAL			R-PDSO-G44		5.5 V	2.63 mm			13.3 mm	Not Qualified			TOP	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP				NOR TYPE		28.2 mm	60 ns	5
TMS29F800T-100BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	125 Cel		1MX8	1M	-40 Cel	1,2,1,15	YES		YES	DUAL			R-PDSO-G44		5.5 V	2.63 mm	10000 Write/Erase Cycles		13.3 mm	Not Qualified			TOP	8388608 bit	4.5 V	CAN ALSO BE CONFIGURED AS 512K X 16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	28.2 mm	100 ns	5	YES
TMS28F800AZYT80CDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-G44		3.6 V	2.625 mm			13.3 mm				TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						28.2 mm	80 ns	3
TMS28F800AVYT80CDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-G44		3.6 V	2.625 mm			13.3 mm				TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						28.2 mm	80 ns	3
TMS28F400BZB-90CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES			DUAL			R-PDSO-G44		5.5 V	2.63 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK				NOR TYPE	.0000012 Amp	28.2 mm	90 ns	12	NO
TMS28F002AMB70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL			R-PDSO-G44		3.6 V	2.63 mm	10000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	2097152 bit	3 V	BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	70 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.