SOP Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AT25FF321A-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4			NOR TYPE	.00005 Amp	4.925 mm			3.3
AT25SF128A-SHB-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words				8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.000025 Amp	5.29 mm
AT45DB021E-SHN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		70 MHz	5.24 mm					2097152 bit	1.65 V		e4		260			5.29 mm			2.7
AT45DB041D-SSU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 256 BYTES EACH	e3			NOR TYPE	.00001 Amp	4.925 mm			2.7
AT45DB041D-SU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 256 BYTES EACH	e3			NOR TYPE	.00001 Amp	5.29 mm			2.7
IS25LP032D-JMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		4MX8	4M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.49 mm					33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			10.31 mm			3
IS25LP064D-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		8MX8	8M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		166 MHz	5.28 mm					67108864 bit	2.7 V			30	250			5.28 mm			3
IS25WP080D-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	1.8			8	SMALL OUTLINE					1.27 mm	105 Cel		1MX8	1M	-40 Cel					DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm					8388608 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm			1.8
IS25WP512M-RMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	67108864 words	1.8			8	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel			Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		1.95 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI		536870912 bit	1.65 V		e3	10	260	NOR TYPE	.00014 Amp	10.31 mm			1.8
M25P80-VMN3TP	STMicroelectronics	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V		e4			NOR TYPE	.00001 Amp	4.9 mm			2.7
M25P80-VMN3TP/4	STMicroelectronics	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			15 mA	1048576 words			3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		1MX8	1M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1			10000 Write/Erase Cycles	25 MHz		Not Qualified		SPI		8388608 bit			e3			NOR TYPE	.0001 Amp
M29F800DB70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/NICKEL PALLADIUM GOLD	YES	DUAL			R-PDSO-G44		5.5 V	2.8 mm			13.3 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK	e3/e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00015 Amp	28.2 mm	YES	70 ns	5	YES
MT25QL256ABA8ESF-MSIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm					268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			10.3 mm			3
MX25L12845EMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified	5 ms	SPI		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1, 20 YEAR DATA RETENTION		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	10.3 mm			3
MX25L3233FMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.52 mm			SPI		33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1	e3			NOR TYPE	.00005 Amp	10.3 mm			3
MX25U12872FM2I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE	R-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI		134217728 bit	1.65 V	IT ALSO CAN BE CONFIGURED AS 64M X 2				NOR TYPE	.000005 Amp	5.28 mm			1.8
MX25U6432FM2I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	1.8			8	SMALL OUTLINE		4			1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL			R-PDSO-G8		2 V	2.16 mm		133 MHz	5.23 mm					67108864 bit	1.65 V	32M X 2BIT		NOT SPECIFIED	NOT SPECIFIED			5.28 mm			1.8
S25FL512SAGMFA010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3			8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		512753664 bit	2.7 V		e3	30	260	NOR TYPE	.0003 Amp	10.3 mm			3
S70FL01GSAGMFV011	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		1073741824 bit	2.7 V		e3			NOR TYPE	.0006 Amp	10.3 mm			3
SST25VF040B-50-4C-SAF-T	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V		e3			NOR TYPE	.00003 Amp	4.9 mm
SST25VF040B-80-4I-SAE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	100	1.27 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	4.9 mm			2.7
SST25VF080B-80-4I-S2AE	Microchip Technology	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	8388608 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		8MX1	8M	-40 Cel			Matte Tin (Sn) - annealed		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified		SPI		8388608 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	5.275 mm			2.7
SST25VF512A-33-4I-SAE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	524288 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX1	512K	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified		SPI		524288 bit	2.7 V		e3			NOR TYPE	.000015 Amp	4.9 mm
SST26VF016B-80E/SM	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	2.5			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	80 MHz	5.25 mm			SPI		16777216 bit	2.3 V					NOR TYPE	.000025 Amp	5.26 mm			2.5
SST26VF016BT-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		16777216 bit	2.7 V		e3			NOR TYPE	.000025 Amp	5.26 mm			3
SST26VF020A-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		2097152 bit	2.7 V			30	260	NOR TYPE	.00002 Amp	4.9 mm			3
SST26VF032-80-5I-S2AE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		32MX1	32M	-40 Cel			Matte Tin (Sn) - annealed		DUAL		SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified		SPI		33554432 bit	2.7 V		e3	40	260	NOR TYPE	.000015 Amp	5.275 mm			2.7
SST26VF032BEUIT-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		33554432 bit	2.7 V					NOR TYPE	.000045 Amp	5.26 mm			3
W25Q128FVSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified		SPI		134217728 bit	2.7 V					NOR TYPE	.00002 Amp	5.28 mm			3
W25Q16CVSSJG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE					1.27 mm	105 Cel		2MX8	2M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm			5.23 mm					16777216 bit	2.7 V							5.23 mm			2.7
W25Q16JVSNJQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		2MX8	2M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm					16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			4.85 mm			3
W25Q32FVSFIG	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm	100000 Write/Erase Cycles	104 MHz	7.49 mm	Not Qualified		SPI		33554432 bit	2.7 V					NOR TYPE	.00002 Amp	10.31 mm			2.7
W25Q32FVSSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified		SPI		33554432 bit	2.7 V					NOR TYPE	.00002 Amp	5.23 mm			2.7
IS25LQ020B-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		2MX1	2M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm					2097152 bit	2.3 V							5.28 mm			3
M25P05-AVMN6T	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	65536 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		524288 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e4			NOR TYPE	.000005 Amp	4.9 mm			2.7
M25P05-AVMN6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	65536 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		524288 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e4			NOR TYPE	.000005 Amp	4.9 mm			2.7
MX25R8035FM2IH0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		2MX4	2M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.23 mm					8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1		NOT SPECIFIED	NOT SPECIFIED			5.28 mm			1.8
AT45D011-SC	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	1048576 words	5		5	1	SMALL OUTLINE	SOP8,.3		Flash Memories		1.27 mm	70 Cel		1MX1	1M	0 Cel			TIN LEAD		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm		15 MHz	5.27 mm	Not Qualified		SPI		1048576 bit	4.5 V	HARDWARE DATA PROTECTION	e0		240	NOR TYPE	.00002 Amp	5.31 mm			5
M25PE16-VMW6G	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	50 MHz	5.99 mm	Not Qualified	15 ms	SPI		16777216 bit	2.7 V		e4			NOR TYPE	.00001 Amp	5.3 mm			2.7
EPCQ128SI16N	Intel	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3.3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	3-STATE	128MX1	128M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	8 ms			134217728 bit	2.7 V		e4	40	260	NOR TYPE	.0001 Amp	10.3 mm			3.3
S25FL128LAGMFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	5.28 mm			3
MT29F1G01ABBFDSF-IT:F	Micron Technology	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	134217728 words	1.8			8	SMALL OUTLINE	SOP16,.4			10	1.27 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		1.95 V	2.65 mm	100000 Write/Erase Cycles	83 MHz	7.5 mm			SPI		1073741824 bit	1.7 V					SLC NAND TYPE	.00005 Amp	10.3 mm			1.8
N25Q00AA13GSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	1073741824 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.41		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1GX1	1G	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		1073741824 bit	2.7 V			30	260	NOR TYPE	.0002 Amp	10.3 mm			3
N25Q032A13ESF40F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		8MX4	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		33554432 bit	2.7 V	ALSO CAN BE ORGANISED AS 32M X 1		30	260	NOR TYPE	.0001 Amp	10.3 mm			2.7
N25Q064A13ESE40F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	1048576 words	3		3/3.3	64	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX64	1M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm			3
M25PE80-VMW6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	50 MHz	5.59 mm	Not Qualified	23 ms	SPI		8388608 bit	2.7 V		e4	40	260	NOR TYPE	.00001 Amp	5.3 mm			2.7
S25FL208K0RMFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	76 MHz	5.283 mm	Not Qualified		SPI		8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	5.283 mm			3
AM29F400BB-70SF	Cypress Semiconductor	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE		8			1.27 mm	85 Cel		256KX16	256K	-40 Cel			MATTE TIN		DUAL			R-PDSO-G44		5.5 V	2.8 mm			13.3 mm				BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK	e3			NOR TYPE		28.2 mm		70 ns	5

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.