TBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25FL128SDSBHMB13	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL256SAGBHI211	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V					NOR TYPE		8 mm	3
S25FL128SDSBHID13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL128SAGBHVC00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0003 Amp	8 mm	3
S25FS512SAGBHB213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.0001 Amp	8 mm	1.8
S25FL256SDSBHVC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL256SAGBHB303	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL032P0XBHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		32MX1	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm					33554432 bit	2.7 V					NOR TYPE		8 mm	3
S25FL512SDSBHVA13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm	3
S25FL256SDSBHMB10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL128SDSBHMC03	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL128SDSBHA300	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL128SDSBHVC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL256SDSBHVD13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL256SDSBHV213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		32MX8	32M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24	3	3.6 V	1.2 mm		80 MHz	6 mm					268435456 bit	2.7 V		e1					8 mm	3
S25FL128SDPBHIC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm	3
S25FL064LABBHA023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	.03 mA	8388608 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		8MX8	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm		108 MHz	6 mm			SPI		67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e1			NOR TYPE	.000055 Amp	8 mm	3
S25FL128SAGBAEA13	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	16MX8	16M	-55 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25HL02GTDPBHB050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm			SPI		2147483648 bit	2.7 V					NOR TYPE	.000045 Amp	8 mm	3
S25FL128SAGBHI201	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			134217728 bit	2.7 V					NOR TYPE		8 mm	3
S25FL128LDPBHM033	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm	3
S25FL128SDSBHEC10	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	16MX8	16M	-55 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100 Write/Erase Cycles	80 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL128SDSBHB200	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL128SAGBHIB01	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			134217728 bit	2.7 V					NOR TYPE		8 mm	3
S25FL256SDPBHVC03	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		32MX8	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1	e1			NOR TYPE	.0003 Amp	8 mm	3
S25HL02GTFABHV053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		2147483648 bit	2.7 V					NOR TYPE	.000045 Amp	8 mm	3
S25FL128SDPBAEC10	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	16MX8	16M	-55 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100 Write/Erase Cycles	66 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL256SDPBHVD00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	105 Cel		32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE	.0003 Amp	8 mm	3
S25FS128SDSBHV303	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm	1.8
S25FS128SAGBHB203	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm	1.8
S25FL512SAGBHBB10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4		20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		512753664 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL256SDSBHI210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX8	32M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24	3	3.6 V	1.2 mm		80 MHz	6 mm					268435456 bit	2.7 V		e1					8 mm	3
S25FL128SAGBHVA11	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm		500 ms			134217728 bit	2.7 V					NOR TYPE		8 mm	3
S25FL512SDSBHVD13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4		20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V		e3	30	260	NOR TYPE	.0003 Amp	8 mm	3
S70FS01GSAGBHM210	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		256MX4	256M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		133 MHz	6 mm					1073741824 bit	1.7 V	IT IS ALSO CONFIGURED AS 1G X 1						8 mm	1.8
S25FL256SAGBHVC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		64MX4	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0003 Amp	8 mm	3
S25FL256SAGBHBD10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25HS02GTFABHI053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		2147483648 bit	1.7 V					NOR TYPE	.00004 Amp	8 mm	1.8
S25FL256SDPBHIC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e1			NOR TYPE	.0001 Amp	8 mm	3
S25FS128SDSBHB203	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm	1.8
S25FL256SDSBHVC13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL256SAGBHBD13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL128SAGBHVA10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0003 Amp	8 mm	3
S25FL512SAGBHVD13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	Flash Memories	20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL128SDPBHI200	Infineon Technologies	FLASH	INDUSTRIAL		TBGA				1	CMOS			SERIAL	SYNCHRONOUS		134217728 words	3		1						1 mm	85 Cel		128MX1	128M	-40 Cel						3.6 V	1.2 mm		133 MHz	6 mm					134217728 bit	2.7 V					NOR TYPE		8 mm	3
S25FL064LABBHM030	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	.03 mA	8388608 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		8MX8	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm			SPI		67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e1			NOR TYPE	.00007 Amp	8 mm	3
S25FL256SAGBHID11	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V					NOR TYPE		8 mm	3
S25FL256SAGBHVD01	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm		500 ms			268435456 bit	2.7 V					NOR TYPE		8 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.