TBGA Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25FL128SAGBHVB01	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm		500 ms			134217728 bit	2.7 V					NOR TYPE		8 mm	3
S25FL128SDSBAEA03	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	16MX8	16M	-55 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100 Write/Erase Cycles	80 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL512SDSBHA310	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4		20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V	ITS ALSO CONFIGURABLE AS 512MX1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm	3
S25FL128SAGBHBD10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL512SDPBHID13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	Flash Memories	20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL128SDPBHIC01	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			134217728 bit	2.7 V							8 mm	3
S25FL128SDSBHVA13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S70FL01GSDPBHBC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		134217728 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		66 MHz	6 mm					1073741824 bit	2.7 V					NOR TYPE		8 mm	3
S25FL512SDSBHM310	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4		20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V	ITS ALSO CONFIGURABLE AS 512MX1	e3	30	260	NOR TYPE	.0003 Amp	8 mm	3
S25FL128SAGBHBA10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL256SAGBHN201	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm		500 ms			268435456 bit	2.7 V					NOR TYPE		8 mm	3
S70FL01GSDSBHVC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	200 mA	134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		1073741824 bit	2.7 V					NOR TYPE	.0006 Amp	8 mm	3
S25FL128SAGBHE210	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	16MX8	16M	-55 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL256SAGBHM303	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL512SDSBHNA10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		128MX4	128M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm					536870912 bit	2.7 V	IT IS ALSO CONFIGURED AS 512M X 1				NOR TYPE		8 mm	3
S25FL128SAGBHI211	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			134217728 bit	2.7 V					NOR TYPE		8 mm	3
S25FL256SAGBHVC03	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		64MX4	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e1			NOR TYPE	.0003 Amp	8 mm	3
S25FL128SDSBHMC00	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL128SAGBHID10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm	3
S25FL256SAGBHM210	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL512SDSBHVD10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4		20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V		e3	30	260	NOR TYPE	.0003 Amp	8 mm	3
S25FL512SDSBHB210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V	ITS ALSO CONFIGURABLE AS 512MX1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm	3
S25FL256SDSBHIC00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL256SDSBHI310	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL256SDSBAEC00	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	32MX8	32M	-55 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100 Write/Erase Cycles	80 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL256SAGBHV201	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm		500 ms			268435456 bit	2.7 V					NOR TYPE		8 mm	3
S25FL256SDSBHIC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL256SDSBHMA03	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL256SDSBHM310	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL256SAGBHVD03	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	105 Cel		64MX4	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0003 Amp	8 mm	3
S25FL512SAGBHMB10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4		20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		512753664 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm	3
S25FL256SAGBHN200	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm	3
S25FL256SDSBHMC03	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL256SDSBHAD10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		8 mm	3
S25FL512SDSBHNA13	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		128MX4	128M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm					536870912 bit	2.7 V	IT IS ALSO CONFIGURED AS 512M X 1				NOR TYPE		8 mm	3
S25FL128SDSBHAB00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S70FS01GSAGBHV210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM		R-PBGA-B24		2 V	1.2 mm		133 MHz	6 mm					1073741824 bit	1.7 V	IT ALSO HAS X1 MEMORY WIDTH						8 mm	1.8
S25FL128SDPBHVC11	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm			6 mm		500 ms			134217728 bit	2.7 V					NOR TYPE		8 mm	3
S25FL128SDPBHV210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1.2 mm		66 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1						8 mm	3
S25FL512SAGBHVB13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	Flash Memories	20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL128SDSBHIC00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL064P0XBFI003	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX1	64M	-40 Cel		BOTTOM		S-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm	Not Qualified				67108864 bit	2.7 V					NOR TYPE		8 mm	3
S25FL256SAGBHA203	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		64MX4	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24	3	3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1	e1					8 mm	3
S25FL128SDSBAE213	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	16MX8	16M	-55 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100 Write/Erase Cycles	80 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm	3
S25FL512SDSBHV310	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4		20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm	3
S25FL128SDSBHIC03	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FL128SDSBHI303	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		80 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		8 mm	3
S25FS512SDSBHV213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		536870912 bit	1.7 V		e1			NOR TYPE	.0001 Amp	8 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.