TFBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SFEM128GB1ED1TO-I-7G-111-STD	Swissbit Ag	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			137438953472 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		128GX8	128G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V			200 MHz	11.5 mm			1099511627776 bit	2.7 V						TLC NAND TYPE		13 mm			3.3
SFEM256GB1ED1TO-I-8H-111-STD	Swissbit Ag	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			274877906944 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		256GX8	256G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V			200 MHz	11.5 mm			2199023255552 bit	2.7 V						TLC NAND TYPE		13 mm			3.3
MTFC128GAPALBH-AAT	Micron Technology	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		128GX8	128G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.1 mm			11.5 mm			1099511627776 bit	2.7 V						NAND TYPE		13 mm
MTFC64GAKAEEY-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		64GX8	64G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			549755813888 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm			2.7
MTFC64GASAONS-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.461 mm		52 MHz	11.5 mm			549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC128GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel		128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm			1099511627776 bit	2.7 V			e1	30	260	NAND TYPE		13 mm
S34ML16G202BHI003	Cypress Semiconductor	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2GX8	2G	-40 Cel					BOTTOM		R-PBGA-B63	3	3.6 V	1.2 mm			9 mm			17179869184 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
M28W320FCT70ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B47		3.6 V	1.2 mm			6.37 mm	Not Qualified	TOP	33554432 bit	2.7 V			e1			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
MT29F8G08ABACAH4:C	Micron Technology	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		1GX8	1G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified		8589934592 bit	2.7 V		4K				SLC NAND TYPE	.0001 Amp	11 mm				NO
MTFC4GMWDM-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			2.7
TC58FVM5B2AXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,8X12,32	8			.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B56		3.6 V	1.2 mm	100000 Write/Erase Cycles		7 mm		BOTTOM	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
KLMBG8FE3B-A001	Samsung	FLASH CARD	OTHER	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM		R-PBGA-B169		3.6 V	1.2 mm		52 MHz	12 mm			274877906944 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE							16 mm			3.3
M28W320FCB70ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B47		3.6 V	1.2 mm			6.37 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V			e1			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
MTFC64GASAONS-AITES	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	95 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.461 mm		52 MHz	11.5 mm			549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
NAND512R3A2SZA6E	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX8	64M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		1.95 V	1.05 mm			9 mm			536870912 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
SST39VF3202C-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT-BLOCK		e1	40	260	NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
SST38VF6404-90-5I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	PARALLEL	ASYNCHRONOUS	4K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK	4	e1	40	260	NOR TYPE	.00003 Amp	8 mm	YES	90 ns	3	YES
SST39LF400A-55-4C-B3KE	Microchip Technology	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K	30 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	128	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		4194304 bit	3 V			e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	55 ns	3.3	YES
SST39VF1601-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K	35 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	512	YES	TIN SILVER COPPER		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.00002 Amp	8 mm	YES	70 ns	3	YES
SST39VF800A-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	256	YES	TIN SILVER COPPER		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		8388608 bit	2.7 V			e1			NOR TYPE	.00002 Amp	8 mm	YES	70 ns	3	YES
M28W640ECB90ZB1S	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6.39 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		10.5 mm		90 ns	3
M28W640CB90ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6.39 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	10.5 mm	YES	90 ns	3	NO
M29W320DB90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	70 Cel		2MX16	2M	0 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M58MR016D100ZC6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	1048576 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,8X14,40/20		Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM		R-PBGA-B48		2 V	1.2 mm			6.29 mm	Not Qualified	BOTTOM	16777216 bit	1.7 V		4	e1			NOR TYPE	.000005 Amp	10.53 mm	YES	20 ns	1.8	NO
M29W400DB55ZE1T	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	8 mm		55 ns	3	YES
M29W640GB90ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		4/8	e1			NOR TYPE	.0001 Amp	8 mm	YES	90 ns	3	YES
M29W320DT70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	70 Cel		2MX16	2M	0 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified	TOP	33554432 bit	3 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29W320EB70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29DW323DT70ZE1T	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W800DB90ZA1T	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
M28W320BT85ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM		R-PBGA-B47		3.6 V	1.2 mm			6.39 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	10.5 mm	YES	85 ns	3	NO
M28W640FCT70ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	70 Cel		4MX16	4M	0 Cel			TIN LEAD		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6.39 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE		10.5 mm		70 ns	3
M29DW324DB90ZE6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	8 mm	YES	90 ns	3	YES
M29W800AT100ZA1T	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	20	.8 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified	TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm		100 ns	2.7	YES
M29DW641F70ZE6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8	e0			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M28W160BT100ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	1.8/2.5,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B46		3.6 V	1.2 mm			6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M59MR032D120ZC6	STMicroelectronics	FLASH	INDUSTRIAL	54	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,10X12,40/20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM		R-PBGA-B54		2 V	1.2 mm			7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4				NOR TYPE	.000005 Amp	12 mm	YES	18 ns	1.8	YES
M29W400DT70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm		70 ns	3	YES
M28W160ECB100ZB6S	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B46		3.6 V	1.2 mm			6.37 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e1			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M29W800DB45ZA1F	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	70 Cel		512KX16	512K	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified	BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e1			NOR TYPE		9 mm		45 ns	3
M28R400C-ZBT	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			262144 words	1.8			16	GRID ARRAY					.75 mm	85 Cel		256KX16	256K	-40 Cel					BOTTOM		R-PBGA-B46		2.2 V	1.2 mm			6.37 mm	Not Qualified		4194304 bit	1.65 V						NOR TYPE		6.39 mm			1.8
M59DR032EA85ZF6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM		S-PBGA-B48		2.2 V	1.2 mm			7 mm	Not Qualified	TOP	33554432 bit	1.8 V			e1			NOR TYPE		7 mm		85 ns	1.8
M28W160BB85ZB6	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B46		3.6 V	1.2 mm			6.37 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	85 ns	3	NO
M28W320ECB85ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B47		3.6 V	1.2 mm			6.37 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE		6.39 mm		85 ns	3
M29W640DT90ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	90 ns	3	YES
M29W320DB90ZE1F	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	70 Cel		2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE		8 mm		90 ns	3
M28W160CB90ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B46		3.6 V	1.2 mm			6.37 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	90 ns	3	NO
M29DW324DB70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.